A5004214162- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Fuel Cells and Related Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Electrocatalysts for Energy Conversion
- Ferroelectric and Negative Capacitance Devices
- Advancements in Solid Oxide Fuel Cells
- Advancements in Photolithography Techniques
- Advanced Memory and Neural Computing
- Optical measurement and interference techniques
- Nanowire Synthesis and Applications
- Photonic and Optical Devices
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Advanced Surface Polishing Techniques
- Thin-Film Transistor Technologies
- Advanced Measurement and Metrology Techniques
- Low-power high-performance VLSI design
- Quantum Information and Cryptography
- Mechanical and Optical Resonators
- Advanced battery technologies research
- Atomic and Subatomic Physics Research
- Adaptive optics and wavefront sensing
- Advanced Fiber Optic Sensors
- Industrial Gas Emission Control
Canon (Japan)
2024
Yokohama National University
1993-2020
Saitama University
1987-2018
Okayama University of Science
2017
IMEC
2016
Toshiba (Japan)
2010-2015
Osaka Prefecture University
2013-2014
Tokyo Institute of Technology
2012
Sony (Taiwan)
2007
Renesas Electronics (Japan)
2004
A novel local strained channel (LSC) MOSFET has been fabricated by a stress control technique utilizing poly silicon gate electrode. The residual compressive in arsenic (As) implanted polysilicon is induced high temperature annealing of CVD SiO/sub 2/ cap with tensile stress. On the other hand, boron (B) free from As result, only n-channel region locally drain current LSC nFETs improved 15% compared to that conventional nFET without degradation pFET current. High performance 55nm CMOSFET...
A point diffraction interferometer (PDI) for extreme ultraviolet lithography (EUVL) aspheric mirror measurement has been developed. In order to realize an accuracy of 0.1 nm rms, various optical error factors have numerically analyzed and the maximum tolerable determined. From estimation results, optimal pinhole diameter determined as 0.5 μm. a PDI, air turbulence reduces precision because long path. avoid this problem, apparatus is filled with helium gas, which smaller refractive index than...
Partially oxidized has been investigated as a cathode for polymer electrolyte fuel cells (PEFCs). Catalytic activity the oxygen reduction reaction (ORR) significantly depends on oxidation state of . and had poor catalytic ORR. The onset potential partially ORR maximum value 0.83 V vs reversible hydrogen electrode in at X-ray diffraction analysis showed that specimens, which definite ORR, both peaks. This result indicated an appropriate was essential to enhance
The first tunable fibre ring laser in the 1700 nm wavelength region has been developed. To achieve this laser, a Tm 3+ –Tb ‐doped is used as active fibre, along with bandpass filter. A that consisted of 1.2/1.7 μm band division multiplexing coupler, filter, an and one 1.21 pump diode realised. wide tuning 130.4 (from 1635.6 to 1766.0 nm) was achieved launched power over ∼ 30 mW. lasing threshold at 1716 9
Nano-TaO<sub>x</sub> particles were supported on MWCNTs <italic>via</italic> a thermal decomposition of oxy-tantalum phthalocyanine. The ORR activity solely-originated from nano-TaO<sub>x</sub> was above 0.9 V <italic>versus</italic> RHE with larger currents than conventional micro-TaO<sub>x</sub> in acidic media.
Zirconium oxide-based electrocatalysts with multi-walled carbon nanotubes as electroconductive support (ZrCxNyOz/MWCNT) were prepared by oxidation of oxy-zirconium phthalocyanine under low oxygen partial pressure and examined new non-platinum cathodes for polymer electrolyte fuel cells. The effect reheating treatment ZrCxNyOz/MWCNT in the temperature range from 900 to 1200°C 1 h nitrogen atmosphere on activity stability oxygen-reduction reaction (ORR) was investigated. at 1000°C enhanced ORR...
We develop strategies to maximize the performance and reliability of in-memory reinforcement learning (RL) with Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Zr xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) ferroelectric tunnel junction (FTJ) by structural material engineering. Simulation results RL suggest that small cycle-to-cycle variability is desirable for...
We evaluated the accuracy of point diffraction interferometer, which has been completed at Atsugi Research Center’s Association Super-Advanced Electronics Technologies for precise measurement extreme ultraviolet lithography optics. To evaluate absolute accuracy, more precision is required. A pinhole with 0.5 μm diameter was used to generate a near completely spherical reference wave front, and helium gas filled inside chamber suppress air turbulence. With this apparatus, 0.04 nm...
For high performance RF/analog and logic device technology, novel SOI wafer engineering featuring <100>-channel CMOSFET with high-resistivity substrate is proposed. Mobility of PMOSFET improved about 16% by changing a channel direction from <110> to <100>. Moreover, the reduction drive current in narrow suppressed. The maximum oscillation frequency (f/sub max/) for NMOSFET around 7% buried oxide (BOX) thickness 400 nm 150 because self-heating effect suppressed, 5% resistivity 10 /spl...
Abstract Device models of amorphous oxide semiconductor thin-film transistors (AOS TFTs) associate AOS carrier transport and electronic states with TFT electrical characteristics. Thus, such are very useful for estimation analysis on operations reliability TFTs developments devices TFTs. We discuss the including mobility density subgap state (DOS) models, which reflect carrier-electron AOSs. A device simulator employing a dependent model an appropriate DOS can reproduce temperature characteristics
Abstract We report the results of high‐resolution transmission electron‐micrograph (TEM) observation, electron diffraction, and neutron diffraction (ND) measurements, which are sensitive to oxygen‐vacancies, for Ta‐oxide‐based oxygen‐reduction electrocatalysts used polymer electrolyte fuel cells (PEFCs). Both TEM ND indicate that highly active tantalum oxide (Ta 2 O 5 ) phase have an incommensurate long‐period structure with oxygen vacancies in oxides, forming three‐dimensionally ordered...
We propose reservoir computing (RC), a framework for constructing recurrent neural networks (RNNs) with simple training rule, using ferroelectric tunnel junction (FTJ) crossbar array. Not only the weights of connection between layer and output need to be trained, but also random fixed within can realized by conductance FTJs. Random layers have optimal variability, which is dependent not on type distribution size. Optimal variability attained device-to-device in FTJs together analog...
The effect of stress memorization technique (SMT) in performance and power reduction is maximized by choosing the appropriate stressor with large change spike RTA. 30% mobility enhancement 60% gate leakage have been achieved simultaneously. Stress distribution channel region for SMT confirmed to be uniform, hence layout dependency minimized aggressively scaled CMOS dense pitch rule(190nm) 45nm technology node.
A read-out circuit for photon-number-resolving superconducting nanowire single-photon detector (SNSPD) based on the single-flux-quantum (SFQ) was designed and basic performance of fabricated confirmed. The current pulse output from an SNSPD array converted to a SFQ pulse. triggered two stacks double-flux-quantum (DFQ) amplifiers. single block 40-series DFQ amplifier (DFQA) generated 2.3-mV voltage with rising time 400 ps operation frequency 1.25 GHz, DFQA 4.6-mV when trains supplied both...
We design an all-optical wavelength converter enabling guard-band-less tunable operation over 30-nm bandwidth for WDM signals. Arbitrary conversion operations in 1530-1560nm range 8-channel 32-Gbaud DP-QPSK signals with the of 1THz are successfully demonstrated.
The first light source with a broadband spectrum in the 1800 nm wavelength region has been developed by employing cascade configuration 1.65 μm band super luminescent diode and Tm 3+ ‐doped fibre amplification unit. achieved bandwidth where intensity exceeded ‐20 dBm/nm was 247 (from 1611 to 1858 nm) low ripple, whose peak‐to‐peak value <0.15 dB.
We have fabricated high-performance self-aligned top-gate InGaZnO TFTs with novel silicon-like source and drain (S/D) parasitic resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SD</sub> ) reduction processes. Ar ion implantation (Ar I/I) formed S/D extension layers reduced R by inducing high-density carriers. First demonstration of metallization processes on surface (In-Ti alloy formation), just like silicidation, realized further...
With the increasing complexity of semiconductor manufacturing processes and high overlay accuracy requirements, it is increasingly necessary to measure wafer characteristics accurately. When distortion in shape mark quality changes occur due characteristic changes, measurement alignment decreases, resulting lower yields. Canon has released stand-alone metrology tool (MS-001) as a solution for measurement. It been reported that productivity can be achieved by measuring exposing aligned based...
In this paper, we demonstrate that the morphology of conductive filament is key parameter to control data retention characteristics CBRAM devices. particular, prove evolution LRS and HRS distributions qualitatively related shape, whereas it influenced quantitatively by materials constituting stack, propose peculiar hourglass shape as a solution for enabling optimal performances. Further analysis effect cycling on confirms role in trend.