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S.G. Li

ORCID: 0000-0002-4069-8904
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About
Contact & Profiles
A5031489844
Research Areas
  • Semiconductor Lasers and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Photonic and Optical Devices
  • Spectroscopy and Laser Applications
  • Analytical Chemistry and Sensors
  • Advanced Semiconductor Detectors and Materials

Southern University of Science and Technology
 2024

Université de Technologie de Troyes
 2024

Centre National de la Recherche Scientifique
 2024

Shenzhen Institute of Information Technology
 2011-2016

 The developments of InP-based quantum dot lasers
OPENALEX - Publications 
S.G. Li Qian Gong Chunyan Cao X.Z. Wang Jingye Yan and 2 more Yaohui Wang Hua Wang

10.1016/j.infrared.2013.05.002 article EN Infrared Physics & Technology 2013-05-24
 Cavity length and stripe width dependent lasing characteristics of InAs/InP(1 0 0) quantum dot lasers
OPENALEX - Publications 
S.G. Li Qian Gong X.Z. Wang Chunyan Cao Zhiwen Zhou and 1 more Hua Wang

10.1016/j.infrared.2015.12.024 article EN Infrared Physics & Technology 2016-01-23
 Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
OPENALEX - Publications 
S.G. Li Qihuang Gong Chunyan Cao X.Z. Wang P. Chen and 4 more Yue Li Q.B. Liu Hua Wang Chuang Ma

10.1016/j.mssp.2011.10.001 article EN Materials Science in Semiconductor Processing 2011-10-26
 Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy
OPENALEX - Publications 
S.G. Li Qihuang Gong Chunyan Cao X.Z. Wang Yue Li and 3 more Q.B. Liu Hua Wang Y. Wang

10.1016/j.infrared.2012.01.004 article EN Infrared Physics & Technology 2012-02-02
 Thermal coefficient of InP-based quantum dot laser from cavity-mode measurements
OPENALEX - Publications 
S.G. Li Qian Gong Chunyan Cao X.Z. Wang Jingye Yan and 1 more Yaohui Wang

10.1016/j.infrared.2014.11.003 article EN Infrared Physics & Technology 2014-11-20
 Multi-spectral lasing characteristics of InAs/GaAs quantum dot laser
OPENALEX - Publications 
S.G. Li Qihuang Gong Caiguang Cao X.Z. Wang Yue Li and 2 more Yaohui Wang Hua Wang

10.1016/j.spmi.2013.03.021 article EN Superlattices and Microstructures 2013-04-17
 Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy
OPENALEX - Publications 
S.G. Li Qian Gong Chunyan Cao X.Z. Wang Yue Li and 2 more Jingye Yan Hua Wang

10.1016/j.physe.2012.05.016 article EN Physica E Low-dimensional Systems and Nanostructures 2012-05-24
 Fibered Optical Sensor Based on the Integration of Quantum Dots on a Polymer Tip
OPENALEX - Publications 
S.G. Li Hongshi Chen Menglei Hu Lemin Shi Mi Gu and 12 more Л. Л. Троцюк Ali Issa Safi Jradi Siqi Jia Jingrui Ma Yun Luo Pierre‐Michel Adam Claire Mangeney Nordin Félidj Peyman Servati Xiao Wei Sun Renaud Bachelot

10.1021/acs.jpcc.4c05092 article EN The Journal of Physical Chemistry C 2024-11-25
 Temperature dependent characteristics of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy
OPENALEX - Publications 
S.G. Li Qian Gong Chunyan Cao X.Z. Wang Ruishuang Wang and 3 more Jintao Fan C.X. Zhang Lin Xia

10.1016/j.infrared.2011.07.002 article EN Infrared Physics & Technology 2011-07-13
 Fabrication of narrow-striped InAs/GaAs quantum dot laser with wet etching technique
OPENALEX - Publications 
S.G. Li Qian Gong Caiguang Cao X.Z. Wang Lin Xia and 2 more Jingye Yan Yaohui Wang

Abstract An InAs/GaAs quantum dot laser, fabricated with a narrow-striped width of 6 μm by wet etching technique, is reported. The solutions are composed three components, i.e. phosphoric acid, hydrogen peroxide, and deionized water. We observed that the unavoidable undercutting was changed ratio solution in GaAs materials. By taking suitable solution, good performance laser size × 700 achieved for fabrication at room temperature. Under continuous wave mode, lasing wavelength exhibited...

10.1080/09500340.2013.827250 article EN Journal of Modern Optics 2013-07-01
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