A5101601397- Perovskite Materials and Applications
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Graphene research and applications
- Maritime Ports and Logistics
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Marine and Coastal Research
- Security and Verification in Computing
- Quantum Dots Synthesis And Properties
- Thermal properties of materials
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Covalent Organic Framework Applications
- Polymer Nanocomposites and Properties
- Carbon Nanotubes in Composites
- Organic and Molecular Conductors Research
- Radiation Effects in Electronics
- Augmented Reality Applications
- Sustainable Industrial Ecology
- Quantum and electron transport phenomena
Gwangju Institute of Science and Technology
2024-2025
Samsung (South Korea)
2024-2025
Sungkyunkwan University
2024
Samsung (United States)
2024
Seoul National University
2010-2023
Seoul Institute
2017-2021
University of Ulsan
2010-2015
Abstract The power conversion efficiency of perovskite solar cells continues to increase. However, defects in materials are detrimental their carrier dynamics and structural stability, ultimately limiting the photovoltaic characteristics stability cells. Herein, we report that 6H polytype effectively engineers at interface with cubic FAPbI 3 , which facilitates radiative recombination improves polycrystalline film. We particularly show effects shallow-level defect originates from formation...
Size-tunable semiconducting two-dimensional (2D) nanosheets from conjugated homopolymers are promising materials for easy access to optoelectronic applications, but it has been challenging due the low solubility of homopolymers. Herein, we report size-tunable and uniform 2D nanorectangles via living crystallization-driven self-assembly (CDSA) a fully polyenyne homopolymer prepared by cascade metathesis metallotropy (M&M) polymerization. The resulting with enhanced successfully underwent CDSA...
Light-Emitting Diodes In article number 2405272, Tae-Woo Lee and co-workers report on a high-performance perovskite light-emitting diode device achieved through the introduction of 1,8-octanedithiol (ODT). This additive effectively passivates defects within MAPbBr3 emitter at interface with hole injection layer. The inset illustrates how ODT prevents exciton quenching by defect passivation, significantly enhancing luminescent properties efficiency.
Donor-acceptor alternating conjugated polymers (D-A CPs) are one of the best materials for high-performance organic electronic devices, owing to their low bandgap and high charge carrier mobility. However, most D-A CPs synthesized by less sustainable polymerization methods. To address this issue, direct arylation (DArP), eliminating need transmetalating agents, was developed over past two decades. Nevertheless, C-H activation during DArP still requires significantly harsh reaction...
A novel electron-accepting bis-lactam building block, 3,7-dithiophen-2-yl-1,5-dialkyl-1,5-naphthyridine-2,6-dione (NTDT), and a conjugated polymer P(NTDT-BDT) comprising NTDT as an electron acceptor benzo[1,2-b:4,5-b′]dithiophene (BDT) donor are designed synthesized for producing efficient organic solar cells. The thermal, electronic, photophysical, electrochemical, structural characteristics of studied in detail compared with those the widely used...
We present a developed highly balanced and thermally stable ambipolar semiconducting polymer PBCDC consisting of diketopyrrolo[3,4-c]pyrrole benzo[1,2-b:4,5-b′]dithiophene building blocks connected by cyanovinylene linker unit. Stabilization the frontier molecular orbitals delocalization LUMO on whole structural unit were realized introducing strong electron-withdrawing linker. In addition to such electronic effects, stacking crystallinity film significantly controlled presence linker, which...
A high-performance amorphous indium-gallium-zinc-oxide thin-film transistor (TFT) inverter, which is composed of an enhancement mode driver and a depletion load, implemented by selectively inducing the negative bias illumination temperature stress (NBITS) to load TFT. Under NBITS, transfer curve TFT shows parallel shift into direction without significant change in subthreshold slope recovers very slowly after terminating NBITS even under harsh conditions. The proposed inverter much improved...
We report a new β-dicyanodistyrylbenzene (<bold>β-DCS</bold>)-based polymer (<bold>PBDCS</bold>), which enables efficient fullerene and non-fullerene organic solar cells with low <italic>E</italic><sub>loss</sub> high EQE.
A series of amorphous polymers poly(arylenevinylene) copolymers, in which heterocycles (furan, thiophene, selenophene) and dialkoxy phenylenes were alternatingly linked by vinylene unit, was prepared the Horner−Emmons reaction. Because high regularity polymer microstructure selective formation E olefin, resulting showed good interchain π−π stacking thin film state despite being polymers. When A,B-alternating poly(phenylene thiophene vinylene), particular with bis(heptoxy) group, used as a...
Abstract Highly crystalline conjugated polymers represent a key material for producing high‐performance thick‐active‐layer polymer solar cells (PSCs). However, despite their potential, limited number of are used in PSCs because the lack highly coplanar acceptor building blocks and insufficient light absorptivity (α < 10 5 ) most donor (D)–acceptor (A)‐type polymers. This study reports series novel 3,7‐di(thiophen‐2‐yl)‐1,5‐naphthyridine‐2,6‐dione (NTDT) acceptor‐based polymers, PNTDT‐2T,...
Abstract The exciton dissociation, recombination, and charge transport of bulk heterojunction organic photovoltaic cells (OPVs) is influenced strongly by the nanomorphology blend, such as grain size molecular packing. Although it well known that polymers based on amorphous poly( p ‐phenylenevinylene) (PPV) have a fundamental limit to their efficiency because low carrier mobility, which leads increased recombination unbalanced extraction, herein, we demonstrate issue can be overcome forming...
A novel poly-Si reconfigurable device with a programmable bottom-gate (BG) array is demonstrated for the first time. The BG has non-volatile memory functionality. This very efficient in terms of size and By changing bias or program/erase state BGs, can be transformed to certain type among n-/p-MOSFETs, n-p p-n diodes. threshold voltage (Vth) contact resistance (Rc) MOSFETs controlled independently by BGs. subthreshold swings n-/p-MOSFETs are 200 230 mV/decade, respectively. I <sub...
Intrinsic transfer and output characteristics of WSe2 field effect transistors are obtained by adopting the dual channel pulsed I–V measurement. Due to DC gate bias stress during measurement, a large hysteresis is observed increased with increasing sweeping range in curves. In addition, as drain increases, measurement induces threshold voltage shift. The curves measured method significantly affected direction previous which leads error analysis. By using short turn-on time (10−4 s), long...
A newly designed NTD-based polymer with an exceptionally high absorption coefficient, small crystallite size, and charge mobility shows excellent thickness-tolerant PCEs in fullerene PSCs.
Large OS kernels always suffer from attacks due to their numerous inherent vulnerabilities. To protect the kernel, hypervisors have been employed by many security solutions. However, relying on a hypervisor has detrimental impact system performance mainly nested paging. In this paper, we present Hypernel, framework combining hardware and software components address problem. Hypersec, component, provides an isolated execution environment for solutions, monitor component enables...
Current-voltage (I–V) characteristics of the graphene field effect transistors (GFETs) are measured by dc, fast I–V (FIV), and pulsed (PIV) methods analyzed. The hysteresis conductance in dc measurement affected sweeping bias range direction. curves FIV method show reduced enhanced at a faster rate, but still range. By applying PIV method, can be suppressed significantly while is improved controlling turn-on, turn-off times (t on t off) gate during off (V base) regardless With short on, long...
In this paper, we present a novel Bfloat16 heuristic algorithm for the mobile graphics pipeline. The uses Bfloat16/20/24/28 selectively, and called process PMS (precision modulated shading). When applied on pixel shader processing 580 top games from Google Playstore, achieved over 56.45 PSNR, 38.88% BF16/FP ratio, 58.18% BF28/FP resulting in total BF/FP ratio of 97.06%. If H/W implementation is fully optimized likes FP16, would expect around 8% GPU power saving.
Abstract A steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) monolithically integrated with an Ag/Ti/Hf 0.8 Zr 0.2 O 2 atomic threshold switch (ATS) device is presented, which allows switching below the Boltzmann limit of 60 mV dec −1 at room temperature (25 °C). The low‐temperature processable IGZO FET combined Hf ‐based ATS device, featured initialization‐free and low‐voltage switching, to achieve ultra‐low power solution back‐end‐of‐line process compatibility (≤400 To further...
Abstract Polycrystalline perovskite light‐emitting diodes (PeLEDs) have shown great promise with high efficiency and easy processability. However, PeLEDs using single‐cation polycrystalline emitters demonstrated low due to defects within the grains at interfaces between layer charge injection contact. Thus, simultaneous defect engineering of perovskites suppress exciton loss is crucial for achieving in PeLEDs. Here, 1,8‐octanedithiol which a strong nucleophile, used increase luminescence by...