A5054914693- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Dielectric materials and actuators
- Electronic and Structural Properties of Oxides
- Electromagnetic wave absorption materials
- Advanced Antenna and Metasurface Technologies
- 2D Materials and Applications
- ZnO doping and properties
- Molecular Communication and Nanonetworks
- Ferroelectric and Piezoelectric Materials
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Copper Interconnects and Reliability
- Thin-Film Transistor Technologies
- Graphene research and applications
- Neural Networks and Reservoir Computing
Sungkyunkwan University
2020-2025
Suwon Research Institute
2020
Government of the Republic of Korea
2020
A Y 2 O 3 interfacial layer is introduced to enhance the capacitance of blocking stacked with antiferroelectric (AFE)‐Hf 0.2 Zr 0.8 (HZO) and Al films in charge trap flash (CTF) memories. The ultrathin film, a target thickness nm, intermixes HZO film during atomic deposition (250 °C) promotes stabilization AFE tetragonal phase postmetallization annealing (600 °C). Significant increases spontaneous polarization maximum dielectric constant are achieved AFE‐HZO/Y structure compared single‐layer...
While B‐doped epitaxial Si 1– x Ge films play a crucial role in advanced semiconductor devices, the correlation between crystalline defects and electrical properties of these has not been extensively explored. Herein, are intentionally induced by varying thicknesses p + –Si 0.8 0.2 with different B concentrations on Si. Their effects characteristics investigated using unit including /n–Si (p –n) diodes metal/p contacts. The –n diodes, forward reverse currents, ideality factors, activation...
Abstract This study compares the effects of ultrathin Y 2 O 3 and Al interfacial layers on electrical properties ZrO HfO dielectrics deposited Ge substrates, specifically examining /Y , /Al stacked structures. Reductions in both interface trap density (D it ) leakage current were observed after five cycles atomic layer deposition (ALD) process for layers. Compared with was more effective reducing decreasing bulk (N ). However, this also leads to an increase capacitance-equivalent oxide...
HfO2-based ferroelectrics are highly expected to lead the new paradigm of nanoelectronic devices owing their unexpected ability enhance ferroelectricity in ultimate thickness scaling limit (≤2 nm). However, an understanding its physical origin remains uncertain because direct microstructural and chemical characterization such a regime is extremely challenging. Herein, we solve mystery for continuous retention high ultrathin hafnium zirconium oxide (HZO) film (∼2 nm) by unveiling evolution...
The endurance characteristic of Zr-doped HfO2 (HZO)-based metal-ferroelectric-metal (MFM) capacitors fabricated under various deposition/annealing temperatures in the atomic layer deposition (ALD) process was investigated. chamber temperature ALD set to 120 °C, 200 or 250 and annealing 400 500 600 700 °C. For given remnant polarization (2Pr) 17.21 µC/cm2, 26.37 31.8 µC/cm2 at respectively. given/identical temperature, largest (Pr) achieved when using At a higher grain size HZO becomes...
Abstract Semiconducting two-dimensional (2D) materials-based devices usually exhibit inferior electrical performance compared to their theoretical predictions, which is mainly attributed the presence of high density interfacial defect induced trap states within bandgap 2D materials. It pertinent control interface traps ( D it ) and identify respective energy levels inside band gap materials understand tailored device performance. Here, we report large modulation by gating varying channel...
In this study, to understand the effect of sublayer thickness doped HfO2 films with limited dopant solubility on ferroelectric phase stabilization, nanolaminated HfO2–Al2O3 various thicknesses were prepared through atomic layer deposition (ALD), and evolution behavior these increasing post-metallization annealing (PMA) temperature was investigated. A narrow optimal range required achieve facile crystallization into a tetragonal phase, followed by orthorhombic transformation sufficient Al...
A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based threshold-switching (TS) device in series to the drain electrode of 2D baseline-FET with molybdenum disulfide (MoS ) channel material. We optimized/developed Ag/HfO TS because its characteristic is associated way how achieve high performance ATS-FET. By...
To understand the effect of H<sub>2</sub>S pre-annealing treatment on a Si<sub>1−x</sub>Ge<sub>x</sub> alloy film, interfacial and electrical characteristics atomic-layer-deposited HfO<sub>2</sub>/Si<sub>1−x</sub>Ge<sub>x</sub> were studied while varying Ge concentration (<italic>x</italic> value) from 0 to 0.3.
Abstract A steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) monolithically integrated with an Ag/Ti/Hf 0.8 Zr 0.2 O 2 atomic threshold switch (ATS) device is presented, which allows switching below the Boltzmann limit of 60 mV dec −1 at room temperature (25 °C). The low‐temperature processable IGZO FET combined Hf ‐based ATS device, featured initialization‐free and low‐voltage switching, to achieve ultra‐low power solution back‐end‐of‐line process compatibility (≤400 To further...
Abstract In this study, the effects of an Al 2 O 3 interfacial layer (IL) on characteristics ferroelectric field-effect transistors (FeFETs) with Hf 0.5 Zr (HZO) gate dielectrics Si substrates were investigated. FeFETs HZO have gained considerable attention owing to their compatibility modern fabrication processes and scalability. However, during deposition substrates, ultrathin metal silicate IL a low dielectric constant is formed in uncontrolled manner, leading significant voltage drop...
Abstract The combined effects of the atomic-layer-deposition (ALD) temperature (220 °C–280 °C) and metal electrodes (TiN Mo) on ferroelectric properties Hf 0.5 Zr O 2 films were studied. Regardless electrode, a tetragonal–orthorhombic–monoclinic phase evolution sequence was observed with increasing ALD after post-metallization annealing. However, transition slightly changed depending which predetermined based as-deposited states. Additionally, out-of-plane orientation final orthorhombic...
We introduced Y–O bonds in the interfacial layer between HfO2 and Si1–xGex (x = 0, 0.15, 0.3) using two different pretreatment methods to minimize number of defects. The pretreatments involved application cyclic pulses Y(CpBut)3 N2, which proceeded with or without injection an oxidizing agent (H2O) at 250 °C, was temperature used for subsequent situ atomic deposition HfO2. Both Y were beneficial reducing leakage current positive flatband voltage shift, induced by increase Ge concentration...
The combined effects of atomic layer deposition (ALD) temperature (220-280 °C) and metal electrodes (TiN Mo) on the ferroelectric properties Hf 0.5 Zr O 2 (HZO) films were studied. Regardless electrode, a tetragonal-orthorhombic-monoclinic phase evolution sequence was observed with increasing ALD after post-metallization annealing. However, transition slightly changed depending which predetermined by as-deposited states. In addition, out-of-plane orientation final orthorhombic grains highly...
Abstract The advances in modern intelligent electronic systems have a pressing need for smart electromagnetic interference (EMI) shielding capabilities frequency-selective manner to choose which waves certain range be blocked. Herein, we present multilayered EMI composites that can provide selective on-off characteristics specific frequency ranges across broad spectrum. are composed of outermost dielectric layers and conductive interlayers fabricated via solution-printing, wherein hexagonal...
To fully understand the electrical characteristics of ferroelectric field-effect transistor (especially, sub-60-mV/decade switching at 300 K), it is necessary to quantitatively figure out physics negative capacitance in material. In this work, metal-ferroelectric-metal (MFM) and metal-insulator-ferroelectric-metal (MIFM) capacitors were fabricated with Hf0.5Zr0.5O2 (HZO) HfO2/HZO, respectively. For various bases input voltage pulse across capacitors, charge released during falling edge (QD)...