A5059574491- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Ion-surface interactions and analysis
- Electronic and Structural Properties of Oxides
- Electron and X-Ray Spectroscopy Techniques
- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
- X-ray Spectroscopy and Fluorescence Analysis
- Diamond and Carbon-based Materials Research
- Integrated Circuits and Semiconductor Failure Analysis
- Graphene research and applications
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- ZnO doping and properties
- Surface and Thin Film Phenomena
- Catalytic Processes in Materials Science
- Copper Interconnects and Reliability
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- Advanced Chemical Physics Studies
- Atomic and Molecular Physics
- Advanced Semiconductor Detectors and Materials
- Semiconductor Lasers and Optical Devices
- Ferroelectric and Piezoelectric Materials
Hosei University
2016-2025
Kyoto Medical Center
2024
Kyoto Prefectural University of Medicine
2024
Saiseikai Shigaken Hospital
2022-2023
Kyushu Institute of Technology
2020
Osaka City University
2020
Helmholtz Institute Jena
2019
Australian National University
2013
Ritsumeikan University
1999-2009
Kagoshima University
2006-2008
We describe extracellular interactions between fibronectin (Fn) and vascular endothelial growth factor (VEGF) that influence integrin-growth receptor crosstalk cellular responses. In previous work, we found VEGF bound specifically to but not vitronectin or collagens. Herein report binds the heparin-II domain of Fn cell-binding VEGF-binding domains Fn, when physically linked, are necessary sufficient promote VEGF-induced cell proliferation, migration, Erk activation. Using recombinant...
Embryonic stem (ES) cell self-renewal and pluripotency are maintained by several signaling cascades expression of intrinsic factors, such as Oct3/4 Nanog. The activated extrinsic leukemia inhibitory factor, bone morphogenic protein, Wnt. However, the mechanism that regulates in ES cells is unknown. Heparan sulfate (HS) chains ubiquitously present surface proteoglycans known to play crucial roles regulating pathways. Here we investigated whether HS on involved pathways important for...
Oligosaccharides are increasingly being recognized as important partners in receptor−ligand binding and cellular signaling. Surface plasmon resonance (SPR) is a very powerful tool for the real-time study of specific interactions between biological molecules. We report here an advanced method immobilization oligosaccharides clustered structures SPR their application to analysis heparin−protein interactions. Reductive amination reactions linker molecules were designed optimized. Using mono-,...
Abstract Atomic number ( Z 1 ) dependences of electronic stopping cross sections S e for channeling trajectories had been well explained low-velocity ions; however, this is not the case with random ). We modeled difference between effective atomic and that ones Z’ changing linearly actual . The proportionality constant k in Al, Ni, Ag 1.8×10 8 cm s −1 ions was found to depend little on target number. 4H-SiC 1.5×10 ions, other hand, located Si determined from 1.4×10 C 2.0×10 C.
Nitric oxide postoxidation anneal results in a significant decrease of defect state density (Dit) near the conduction bandedge n-4H–SiC at oxide/(112̄0) 4H–SiC interface. Comparison with measurements on conventional (0001) Si-terminated face shows similar interface following passivation. Medium energy ion scattering provides quantitative measure nitrogen incorporation SiO2/SiC
A nearly-ideal edge termination for GaN p–n junctions was designed and demonstrated using Mg-ions implanted field limiting rings (FLRs). The FLRs were fabricated via the ultra-high-pressure annealing process after implanting into etched n-type region outside main junction. results of technology computer-aided design simulation indicate that by optimizing space width rings, breakdown voltage (BV) can be increased over 90% ideal parallel plane BV (973 V). Accordingly, diodes exhibited low...
We report on the thermal decomposition of uncapped, ultrathin HfO2 films grown by chemical vapor deposition SiO2/Si(100) substrates. Medium energy ion scattering, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force were used to examine after they had been annealed in vacuum 900–1050 °C. Film is a strong function overlayer thickness at given temperature, but underlying SiO2 layer does not significantly affect stability film. Oxygen diffusion system was monitored...
A new toroidal electrostatic analyzer (ESA) configuration for medium energy ion scattering has been designed and fabricated structural analysis of surfaces. The present a wide interelectrode distance 16 mm an range 10% the pass at constant applied voltage. is mounted horizontally on turntable accepts ions scattered within well defined angular range. To get good resolution, we employed photon-counting image acquisition system (PIAS: Hamamatsu Photonics) with spatial resolution 40–50 μm,...
The oxidation kinetics for $\mathrm{Ni}(111)$ surface and the structure of oxide layers grown at room temperature were analyzed by high-resolution medium energy ion scattering using isotopically labeled $^{18}\mathrm{O}_{2}$. Initially, showed a reflection high electron diffraction (RHEED) pattern $\mathrm{Ni}(111)\text{\ensuremath{-}}(2\ifmmode\times\else\texttimes\fi{}2)\text{\ensuremath{-}}\mathrm{O}$ chemisorption an oxygen exposure few langmuir...
A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al₂O₃ gate dielectric film on a free-standing substrate fabricated by triple ion implantation is presented. The DMOSFET was formed Si implanted source regions in Mg p-type base N termination regions. maximum drain current of 115 mA/mm, transconductance 19 mS/mm at voltage 15 V, and threshold 3.6 V were obtained for the length 0.4 μm estimated surface concentration 5 × 1018 cm-3. difference...
It is demonstrated that (NBCO) thin films, deposited by laser ablation, show extraordinary properties which are unprecedented in the 123 system. These include ease of oxidation, very high crystallinity, surface stability, and a relatively . The NBCO films compared with those best reported origins their differences discussed. implications NBCO's superior thin-film quality context device applications also addressed throughout paper.
An experiment addressing electron capture (EC) decay of hydrogen-like $^{142}$Pm$^{60+}$ ions has been conducted at the experimental storage ring (ESR) GSI. The appears to be purely exponential and no modulations were observed. Decay times for about 9000 individual EC decays have measured by applying single-ion spectroscopy method. Both visually automatically analysed data can described a single with constants 0.0126(7) s$^{-1}$ automatic analysis 0.0141(7) manual analysis. If modulation...
Abstract Ion implantation into p-type gallium nitride (GaN) to a depth of several microns for power devices is challenge because their activation disturbed by the damage caused implantation. To reduce this damage, channeled technique was applied implant magnesium (Mg) ions GaN (0001). Compared with random implantation, demonstrated and activate in >10 times deeper regions. Thus, indispensable deep Mg devices.
We report great possibilities of ion implantation technology for applying to high-power GaN electron devices. demonstrated high-performance normally-off self-aligned metal gate MISFETs with Si reduce the contact resistances ohmic contacts and N device isolation. formed p-type in n-type using Mg observed p-n junction diode behavior on forward I-V characteristics EL measurements.