A5056012556- Semiconductor materials and devices
- Color Science and Applications
- Industrial Vision Systems and Defect Detection
- Electrowetting and Microfluidic Technologies
- Ion-surface interactions and analysis
- Diamond and Carbon-based Materials Research
- Semiconductor materials and interfaces
- Image Enhancement Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Electron and X-Ray Spectroscopy Techniques
- Metal and Thin Film Mechanics
- Silicon and Solar Cell Technologies
- Silicon Carbide Semiconductor Technologies
- Surface Roughness and Optical Measurements
- Electronic and Structural Properties of Oxides
- Modular Robots and Swarm Intelligence
- Surface and Thin Film Phenomena
- High voltage insulation and dielectric phenomena
- Advanced Vision and Imaging
- Image Processing Techniques and Applications
- Electrohydrodynamics and Fluid Dynamics
- Infrared Target Detection Methodologies
- Advancements in Photolithography Techniques
- Advanced Measurement and Detection Methods
- Thin-Film Transistor Technologies
Kanagawa University
2015-2024
Otsuka (Japan)
2024
Otsuka Pharmaceutical (Spain)
2024
Kanazawa University
2023
Tokyo Denki University
2014-2019
Nippon Sheet Glass (Japan)
2002-2017
Kobe University
2011-2017
Chulalongkorn University
2014
Nippon Institute of Technology
1999-2011
Institut des NanoSciences de Paris
2009
Accurate knowledge of the instrument transfer function (ITF) is vital for topography measurements using white‐light interferometry (WLI). To this end, we derive a complete set analytical expressions power spectral density (PSD) discretely-sampled binary pseudo‐random array (BPRA) as theoretical benchmark. We then determine ITF by comparing PSD with measured BPRA. For Zygo ZeGage™ Pro HR 50× objective, determined closely matches nominal modulation (MTF). Accordingly, integrate MTF into...
Accurate knowledge of the instrument transfer function (ITF) is vital for topography measurements using white‐light interferometry (WLI). To this end, we derive a complete set analytical expressions power spectral density (PSD) discretely-sampled binary pseudo‐random array (BPRA) as theoretical benchmark. We then determine ITF by comparing PSD with measured BPRA. For Zygo ZeGage™ Pro HR 50× objective, determined closely matches nominal modulation (MTF). Accordingly, integrate MTF into...
Accurate knowledge of the instrument transfer function (ITF) is vital for topography measurements using white‐light interferometry (WLI). To this end, we derive a complete set analytical expressions power spectral density (PSD) discretely-sampled binary pseudo‐random array (BPRA) as theoretical benchmark. We then determine ITF by comparing PSD with measured BPRA. For Zygo ZeGage™ Pro HR 50× objective, determined closely matches nominal modulation (MTF). Accordingly, integrate MTF into...
SiC is unique amongst the wide bandgap semiconductors in that natural thermal oxide stoichiometric SiO2, as case for silicon. The possibility of producing devices such MOSFET which SiO2 used gate insulator has motivated substantial work aimed at understanding morphology and electrical properties SiO2/SiC interface processes responsible growth. growth kinetics are quite different, parallel anti-parallel to crystal polar direction. We review experimental study nature grown ultra-dry oxygen...
The HfO2/Si(001) interfaces formed by reactive dc sputter deposition of Hf buffer layer followed HfO2 stacking were analyzed high-resolution transmission electron microscopy, medium energy ion scattering (MEIS), and photoelectron spectroscopy using synchrotron-radiation lights. present MEIS analysis determined the elemental depth profiles revealed that no resulted in growth SiO2 at interface, presence led to formation Si-rich silicate-like interlayers. binding shifts Si-2p3/2 identified...
Highly efficient impurity doping in diamond by ion implantation has been a crucial issue the field of semiconductor fabrication for several decades. We investigated electrical properties heavily B-doped type IIa introduced at room temperature with shallow and flat concentration 3.6 × 1019 cm−3 (∼200 ppm) from surface to ∼130 nm depth, followed thermal annealing 1150 1300 °C. The activation implanted acceptor B was maximum 80% sample into which ions were °C annealing. hole Hall mobility...
Insufficient research on electromagnetic interference (EMI) with medical electronic equipment by the signals of wireless LAN has been done. Therefore, compatibility between and data communications was done (IEEE802.11 a, b, g).
We homoepitaxially synthesized a pure diamond film on type Ib base substrates by microwave plasma-assisted special chemical vapor deposition method and then doped B impurity atoms the ion implantation technique with various doping concentrations from 2×1017 to 2×1019 cm−3 at room temperature followed activation annealing 1300 °C. The electrical properties of specific resistance, carrier concentration, Hall mobility, conductive were analyzed effect measurements based van der Pauw sample...
The authors implanted P atoms at 50 and 140-keV energies with respective fluences of 1×1014 2×1014/cm2 into diamond thin films synthesized by chemical vapor deposition on the type-Ib substrate formed high-pressure high-temperature conditions. occupational sites were determined in each processing stage implantation, ion-beam-induced epitaxial crystallization (IBIEC) annealing 3-MeV-Ne2+ ion irradiation 750°C, thermal 850°C vacuum, quantitatively comparing random channeling yields Rutherford...
Abstract A processing method is described for the document image composed of characters, graphics and photographs, extracting those regions by following procedures. (1) Two‐dimensional Fourier transformation performed entire image, angle character lines corrected utilizing peak coordinate transform result, period calculated. (2) Based on real imaginary parts coordinates characters are (3) The two‐dimensional subpictures determined period. scanned detected determining existence corresponding...
We investigated the electrical properties and conduction mechanism of heavily B+-implanted type IIa diamond with respect to implantation postannealing temperatures. The B atoms were shallowly implanted a flat concentration 3.5 × 1019 cm−3 at RT 900 °C; these samples finally annealed 1150 °C, 1300 °C 1450 °C. consequently confirmed p-type conductivity typical ionization energy acceptor in wide measured temperature range. doping efficiency progressed remarkably well attained 78% Hall mobility...
Asymmetric line shapes for medium energy H and He ions backscattered from topmost adatoms such as $\text{Si}(111)\text{\ensuremath{-}}\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}\text{-Sb}$ $\text{Ni}(111)\text{\ensuremath{-}}2\ifmmode\times\else\texttimes\fi{}2\text{-O}$ are measured by a toroidal electrostatic analyzer with an excellent resolution. The spectra exhibit pronounced asymmetric nature well fitted exponentially modified Gaussian profile. It is found that the...
Abstract We fabricated a Schottky barrier diode (SBD) on ion-implanted diamond substrates. The SBDs contained lightly doped regions under the electrodes and heavily beneath Ohmic contacts. current remained below 6.4 × 10 −11 A at reverse biases of up to V, but increased sharply forward bias −3.5 V. height ideality factor were estimated be 1.1 eV 10, respectively. hole concentrations obtained by measuring capacitance various supplied voltages in good agreement with values from Hall effect...
The rumpled relaxations of TiC(001) and TaC(001) with strong covalent bonds were determined precisely by medium energy ion scattering using a toroidal electrostatic analyzer an excellent resolution $\ensuremath{\Delta}E/E=9\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}4}.$ It allows monolayer depth thus simple triangulation method the shadowing effect achieved accuracy 0.01 \AA{} in for displacement atoms near surface region. relaxation (+: outwards) rumpling [+: C toward vacuum side...