Choongho Lee

ORCID: 0000-0002-4630-8428
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About
Contact & Profiles
Research Areas
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Hepatitis C virus research
  • Hepatitis B Virus Studies
  • Integrated Circuits and Semiconductor Failure Analysis
  • Liver Disease Diagnosis and Treatment
  • Ferroelectric and Negative Capacitance Devices
  • Metal Forming Simulation Techniques
  • HIV/AIDS drug development and treatment
  • Viral gastroenteritis research and epidemiology
  • Reservoir Engineering and Simulation Methods
  • Mechanical Engineering and Vibrations Research
  • Metallurgy and Material Forming
  • Silicon Carbide Semiconductor Technologies
  • X-ray Diffraction in Crystallography
  • Engineering Applied Research
  • Systemic Lupus Erythematosus Research
  • Crystallization and Solubility Studies
  • Advanced Data Storage Technologies
  • Laser and Thermal Forming Techniques
  • Cervical Cancer and HPV Research
  • Soil Mechanics and Vehicle Dynamics
  • Electrostatic Discharge in Electronics
  • Genomics, phytochemicals, and oxidative stress
  • Electronic and Structural Properties of Oxides

Dongguk University
2015-2024

IBM (United States)
2023

Seoul National University
2005-2017

Samsung (South Korea)
2005-2014

Stanford University
2007-2014

Inha University
2007-2008

Jeonju University
2007

Northwestern University
2001-2006

Korea Advanced Institute of Science and Technology
1993-2006

The University of Texas at Austin
2001-2002

A number of PDZ domain-containing proteins have been identified as binding partners for the oncoprotein E6 high-risk type human papillomaviruses (HPVs). These include hDlg, hScrib, MAGI-1, MAGI-2, MAGI-3, and MUPP1. The domain-binding motif (-X-T-X-V) at carboxy terminus is essential targeting proteasomal degradation. presence this only in HPVs suggests its possible role HPV-induced oncogenesis. To investigate HPV life cycle, two mutant HPV31 genomes were constructed: E6ValDelta, with a...

10.1128/jvi.78.22.12366-12377.2004 article EN Journal of Virology 2004-10-26

Wearable exoskeleton robots have become a promising technology for supporting human motions in multiple tasks. Activity recognition real-time provides useful information to enhance the robot's control assistance daily This work implements activity system based on signals of an inertial measurement unit (IMU) and pair rotary encoders integrated into robot. Five deep learning models been trained evaluated recognition. As result, subset optimized was transferred edge device evaluation...

10.3390/s22249690 article EN cc-by Sensors 2022-12-10

10.6109/jkiice.2025.29.3.289 article EN The Journal of the Korean Institute of Information and Communication Engineering 2025-03-31

An activity identified in hepatitis C virus NS4B paves the way for a distinct new class of antivirals.

10.1126/scitranslmed.3000331 article EN Science Translational Medicine 2010-01-20

Hepatitis C virus (HCV) infection is responsible for various chronic inflammatory liver diseases. Here, we have identified a naturally occurring compound with anti-HCV activity and elucidated its mode of antiviral action.

10.1111/bph.13358 article EN British Journal of Pharmacology 2015-10-08

The rutile stoichiometric phase of RuO2, deposited via reactive sputtering, was evaluated as a gate electrode on chemical vapor ZrO2 and Zr silicate for Si–p-type metal–oxide–semiconductor (PMOS) devices. Thermal stability the electrodes studied at annealing temperatures 400, 600, 800 °C in N2. X-ray diffraction measured to study grain structure interface reactions. resistivity RuO2 films 65.0 μΩ cm after annealing. Electrical properties were MOS capacitors, which indicated that work...

10.1063/1.1347402 article EN Applied Physics Letters 2001-02-19

Negative-bias temperature-instability (NBTI) characteristics are carefully studied on SOI and body-tied pMOS FinFETs for the first time. It was observed that a narrow fin width degraded device lifetime more than wider width. Electrons generated by NBT stress accumulated at center of silicon cause energy-band bending. This results in an incremental hole population interface. The energy band is bent steeply wide electrons. A FinFET shows better immunity to due substrate contact.

10.1109/led.2005.846587 article EN IEEE Electron Device Letters 2005-05-01
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