A5042455982- ZnO doping and properties
- Ga2O3 and related materials
- Advanced Photocatalysis Techniques
- Perovskite Materials and Applications
Xidian University
2021-2023
All-inorganic perovskites, with their low-cost, simple processes and superior heat stability, have become potential candidate materials for photodetectors (PDs). However, they no representative responsivity in the deep-ultraviolet (UV) wavelength region. As a new-generation semiconductor, gallium oxide (Ga2O3), which has an ultrawide bandgap, is appropriate solar-blind (200 nm–280 nm) deep-UV detection. In this work, ultrawide-bandgap Ga2O3 was introduced into inorganic perovskite device...
There is a tradeoff between the high photocurrent and low dark current for gallium oxide (Ga 2 O 3 ) metal–semiconductor–metal photodetectors (PDs). Achieving balance crucial to final device's performance. Herein, indium zinc (IZO) introduced Ga metal contact first time. By adjusting IZO interlayer thickness annealing temperature, barrier height can be well controlled. In detail, β‐Ga film epitaxially grown by mist chemical vapor deposition, different thicknesses of are deposited under Ti/Au...
In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for first time. The x-ray diffraction scanning pattern identifies that layers are grown with (−201) planes parallel to plane of GaN template, and transmission electron microscopy shows lattice is regularly neatly arranged, indicating good crystal quality. based SBDs 4 20 µm...
In this work, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MOSFETs grown by nonvacuum, cost-effective mist chemical vapor deposition (mist-CVD) method on Fe-doped GaN substrates were demonstrated for the first time. X-ray diffraction (XRD) and transmission...