A5056380842- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
- Radiation Effects in Electronics
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- ZnO doping and properties
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Advanced Photocatalysis Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- Thin-Film Transistor Technologies
- Copper Interconnects and Reliability
- Plasma Diagnostics and Applications
- Aluminum Alloys Composites Properties
- Electromagnetic Compatibility and Noise Suppression
- Nanowire Synthesis and Applications
Xidian University
2017-2025
In this article, a 4H-SiC metal-insulator-semiconductor-insulator-metal (MISIM) ultraviolet (UV) photodetector (PD) with normal working temperature up to 550 °C, has been successfully fabricated and characterized for the first time. At dark current of our MISIM remains at ~0.2 nA level record photo-to-dark ratio (PDCR) 62.7 is achieved reverse bias voltage −15 V. Under 275 nm illumination, high responsivity (R) 0.23 0.54 A/W have room (RT) respectively. To best knowledge, result reported...
The 4H-silicon carbide (SiC) junction barrier Schottky with field limiting rings (FLRs-JBS) termination was fabricated and analyzed to evaluate its radiation tolerance of the single-event burnout (SEB). Experimental simulation results show that SiC/SiO2/metal intersection is most sensitive position in FLRs-JBS. This work proposes there are different mechanisms between active terminal regions under heavy-ion irradiation for first time. FLRs area more likely burn out than due serious current...
A novel 4H-SiC junction barrier Schottky (JBS) with deep linear graded doping (DLGD) P structure is proposed and fabricated to enhance the radiation tolerance of Single-Event Effect (SEE). The radiation-hardened function new confirmed via two-dimensional numerical simulation SEE experiment. hardened device was tested under heavy ion irradiation energy transfer (LET) up 83.5 MeV <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">...
There is a tradeoff between the high photocurrent and low dark current for gallium oxide (Ga 2 O 3 ) metal–semiconductor–metal photodetectors (PDs). Achieving balance crucial to final device's performance. Herein, indium zinc (IZO) introduced Ga metal contact first time. By adjusting IZO interlayer thickness annealing temperature, barrier height can be well controlled. In detail, β‐Ga film epitaxially grown by mist chemical vapor deposition, different thicknesses of are deposited under Ti/Au...
In this article, the effect of different NO annealing time 4H-SiC metal-oxide-semiconductor (MOS) capacitance and n-type MOS field transistors (n-MOSFETs) for total ionizing dose (TID) radiation are studied. We show that after 1250 °C 60 min annealing, device balances between channel mobility resistance. The mechanism TID on gate oxide is And ledge pMOS clarified. Furthermore, electrical characteristics n-MOSFET affected by also discussed, showing mainly affects shift threshold voltage...
The InGaN/GaN multi-quantum-wells (MQWs) solar cells employing the surficial GaN nanostructure as light traps were investigated. performance of MQWs cell with nano holes surface shows an obvious advantage over that poles, much less than planar one. From measurements EQE and photoluminescence spectra, enhancement photoelectric response contributes to device performances. Because effective absorption is increased, conversion efficiency significantly improves from 1.02% (planar surface) up...
In this letter, an ultrahigh-temperature 4H-SiC Schottky ultraviolet (UV) photodiode (PD) using oxygen plasma pre-treatment (OPT) technology has been successfully fabricated and characterized. The PD a high barrier height (SBH) of 1.94 eV. It shows excellent tolerance to extreme temperature with dark current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.7\times 10\,\,^{\mathbf {-8}}$...
The design of device termination is crucial for power devices. In this letter, we present a novel approach designing in Si-based devices using deep neural networks (DNN), taking the narrowed field-limiting ring (NFLR) as an example. Our proposed method can not only achieve prediction accuracy over 97% breakdown voltage (BV), but also provide optimization scheme automatically and intelligently. We believe that machine learning technology significantly reduce cost enhance efficiency design,...
In this work, a novel tapered doping tail modulated junction termination extension (TDTM-JTE) technique without extra process steps or masks is proposed, and successfully experimentally demonstrated. With the application of proposed TDTM-JTE to 4H-SiC PiN diodes with 30-μm-thick/3×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> doped epi-layer, it was demonstrated that provides...
In this work, a high-temperature 4H-SiC Schottky ultraviolet (UV) photodiodes (PDs) with RTP has been successfully fabricated and characterized from room temperature (RT) up to 400 °C. The contact achieved higher barrier height (SBH) of 1.54eV very low dark current 1.53 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−13</sup> A 1.3 xmlns:xlink="http://www.w3.org/1999/xlink">−9</sup> A, respectively, at RT Under 254-nm illumination, high...