A5017596258- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Metal-Organic Frameworks: Synthesis and Applications
- Membrane Separation and Gas Transport
- Covalent Organic Framework Applications
- Advancements in Semiconductor Devices and Circuit Design
- Ionic liquids properties and applications
- Electromagnetic Compatibility and Noise Suppression
- Silicon and Solar Cell Technologies
- Advancements in Battery Materials
- Zeolite Catalysis and Synthesis
- Carbon Dioxide Capture Technologies
- Aluminum Alloys Composites Properties
- Fuel Cells and Related Materials
- Extraction and Separation Processes
- Catalysis and Hydrodesulfurization Studies
- Inorganic Fluorides and Related Compounds
- HVDC Systems and Fault Protection
- Chemical Synthesis and Characterization
- Radiation Effects in Electronics
- Circular RNAs in diseases
- Supercapacitor Materials and Fabrication
- MicroRNA in disease regulation
- Machine Learning in Materials Science
Xidian University
2016-2025
Tiangong University
2022-2024
Stomatology Hospital
2022
Sichuan University
2022
State Key Laboratory of Oral Diseases
2022
Bohai University
2021
Institute of Process Engineering
2021
ORCID
2020
AT&T (United States)
1993
The dynamic avalanche reliability of 1200-V silicon carbide (SiC) power metal-oxide semiconductor field-effect transistors (MOSFETs) is studied in this article. unclamped inductive switching (UIS) tests are conducted to locate failure points. An optimized thermal network model with the definition material above epitaxial layer used simulate process SiC MOSFETs. simulation and experiment results matched, which verifies validity model. Further show that a slight change doping profile p-well...
Effective capture and recovery of sulfur hexafluoride (SF6) from SF6/N2 mixture is an urgent challenge. Considering the existence a large number metal–organic frameworks (MOFs), computational screening MOFs strongly desired before experimental efforts. In this work, top-performance MOF adsorbents were identified most recent computation-ready, (CoRE MOFs) based on various metrics. The degree unsaturation (unsat) hydrogen per unit cell (H) revealed with optimal machine learning (ML) model are...
The separation of He/H2 using membrane technology has gained significant interest in the field He extraction from natural gas. One greatest challenges associated with this process is extremely close kinetic diameters two gas molecules, resulting low selectivity. In study, we investigated structure-performance relationship metal-organic framework (MOF) membranes for through molecular simulations and machine learning approaches. By conducting simulations, identified potential MOF high...
The efficient separation of ethane/ethene (C2H6/C2H4) is imperative yet challenging in industrial processes. We herein combine machine learning (ML) and molecular simulation to predict optimal covalent organic frameworks (COFs) for reversed C2H6/C2H4 before experimental efforts. Using simulations, two out 601 CoRE COFs were identified with excellent performance, eight exhibit high selectivity surpassing all the reported values, although these have a relatively low working capacity. As ML, we...
In this letter, planar floating limiting rings (FLRs) and trench FLRs with different depths for the 4H-SiC junction barrier Schottky (JBS) rectifiers are analyzed compared simulations experiments. Compared FLRs, experimental results present that first ring spacing window termination efficiency exceeds 80% of parallel plane breakdown voltage (BV) can be widened area reduced at same BV by adopting FLRs. The also indicate there is an optimal depth a smaller sidewall angle achieve better device...
Using the GelMA hydrogel as a carrier and adenovirus-mediated transfection of overexpressing circRNAs (hsa-circ-0003376, named circ-CTTN), osteogenic efficiency human umbilical cord mesenchymal stem cells (hUCMSCs) can be significantly enhanced.
This paper reports the demonstration of a high performance 4H-SiC floating junction barrier Schottky (FJ_JBS) rectifier with 30μm, 6×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> -doped epitaxial layer. Extensive simulations have been performed to design, optimize and analyze structure FJ_JBS rectifier. The fabricated shows that breakdown voltage (BV) differential R <sub...
The effects of 5 MeV proton irradiation on ON-state characteristics 1200 V 4H-SiC VDMOSFETs are investigated in this paper, and related mechanisms have been revealed by the analysis their test structure ohmic contacts, lateral nMOSFETs MOS capacitors simultaneously fabricated same wafer. results show that threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> ) decreases obviously with increasing doses because dominant...
In this paper the effects of 5 MeV proton irradiation on nitrided SiO2/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and related mechanisms revealed. The density interface states (Dit) is increased with doses, annealing response suggests that worse Dit mainly caused by displacement effect irradiation. However, X-rays photoelectron spectroscopy (XPS) measurement shows quantity proportion breaking Si≡N induced only 8%, which means numbers near electron traps (NIETs)...
A two-dimensional electrical SiC MOS interface model including and near-interface traps is established based on the relevant tunneling Shockley–Read–Hall model. The consistency between simulation results measured data in different temperatures shows that this can accurately describe capture emission performance for oxide traps, well explain hysteresis-voltage response with increasing temperature, which intensified by interaction deep shallow traps. This also indicates result an increase of...