As a promising ultra-wide bandgap semiconductor, the β-phase of Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> has attracted more and interest in field power electronics due to its (4.8 eV), high theoretical breakdown electric (8 MV/cm), large Baliga's figure merit, which is deemed as potential candidate for next generation high-power electronics, including diodes, effect...

A novel 4H-SiC trench metal-oxide-semiconductor field-effect transistor (MOSFET) with an L-shaped gate (LSG) is proposed and studied via numerical simulations in this letter. Adoption of additional LSG region that surrounds the bottom corner allows peak electric field SiO2 dielectric to be significantly relieved by charge compensation, device breakdown voltage can greatly enhanced without causing significant degradation output characteristics. In high-voltage blocking states, at weakened,...

In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal–oxide–semiconductor (MOS) capacitors under positive and negative biases are investigated using the current–voltage (I–V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant positively biased electric fields of 0.37–2.19 MV cm−1, extracted barrier height ranged 0.88 eV 0.91 various temperatures. Poole–Frenkel dominates negatively 1.92–4.83 trap energy levels 0.71 0.77 band offset (ΔEc)...

A thermal model of AlGaN∕GaN high electron mobility transistors (HEMTs) has been developed based on a quasi-two-dimensional numerical solution Schrödinger’s equation coupled with Poisson’s equation. The static current characteristics HEMT devices have obtained the consideration self-heating effect related parameters including polarization, mobility, saturation velocity, conductivity, drain and source resistance, conduction-band discontinuity at interface between AlGaN GaN. simulation results...

The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal—oxide—semiconductor (MOS) capacitor are investigated. results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence ZnO can effectively suppress formations oxides at interface between GaAs gate dielectric gain smooth interface. ZnO-passivated MOS exhibits a very small hysteresis frequency dispersion. Using Terman method, trap density is extracted from...

An improved Bosch etching process using inductively coupled plasma system has been investigated for the of 4H-silicon carbide (SiC). By optimizing etch parameters, a mesa structure with nearly vertical sidewall and without microtrench at bottom corner fabricated, formation elimination are preliminarily discussed cycles in this paper. Scanning electron microscopic analysis was used to demonstrate etched morphology under different conditions. Simple mesa-terminated 4H-SiC p-i-n diodes were...

Based on an analytical surface potential and a simple mathematical approximation for the source depletion width, physics-based capacitance model with closed form silicon double-gate tunnel field-effect transistors (TFETs) is developed. Good agreements between proposed numerical simulations have been achieved, which reveal that tunneling carriers from negligible contribution to channel charges gate can be almost acted as gate-drain capacitance, quite different of MOSFETs. This without...

This article presents a high-precision modeling method to build small signal model of GaAs pseudomorphic high electron mobility transistor (pHEMT) by using radial basis function artificial neural network (RBF ANN). Both the RBF ANN Method 1 that uniformly distributed spread constant (SC) in given range and 2 increasingly changed SC with chosen step have been modeled this work. Compared l 1, can automatically obtain optimal corresponding SC. The is developed for S-parameters equivalent...

In this article, a 4H-SiC metal-insulator-semiconductor-insulator-metal (MISIM) ultraviolet (UV) photodetector (PD) with normal working temperature up to 550 °C, has been successfully fabricated and characterized for the first time. At dark current of our MISIM remains at ~0.2 nA level record photo-to-dark ratio (PDCR) 62.7 is achieved reverse bias voltage −15 V. Under 275 nm illumination, high responsivity (R) 0.23 0.54 A/W have room (RT) respectively. To best knowledge, result reported...

A junction termination method adopting heavily doped p-well rings with a shallow trench for each ring, named as multiple floating limiting (TMFLRs), is analyzed and fabricated without any additional process in 4H-SiC barrier Schottky diode. breakdown voltage of 6.7 kV achieved using TMFLRs structure on an epitaxial layer thickness 50 μm, while the conventional planar FLRs same area only 5.7 kV. The experimental result has demonstrated that yields about 90% parallel plane voltage. In...

The silicon carbide trench metal-oxide-semiconductor field-effect transistors (SiC UMOSFET) with P+ floating island (FLI) which shields the gate oxide at bottom of from high electric field during blocking state and enhances breakdown voltage (BV), is presented in this study using two-dimensional simulations. effects doping concentration, length position FLI on BV, distribution specific on-resistance (Ron,sp) are studied, thereby providing particularly useful guidelines for design new type...

In this article, a novel planar InAs/GaSb heterojunction face-tunneling FET (HFTFET) is proposed for device performance improvement. As known in previous studies, the entire tunneling junction of HFTFET can be controlled by gate effectively and uniformly, therefore, large effective area extremely steep turn on/off switch would achieved. However, leakage current between source drain degrades OFF-state characteristics greatly. Hence, an implanted introduced reducing to optimize performance,...

In this letter, planar floating limiting rings (FLRs) and trench FLRs with different depths for the 4H-SiC junction barrier Schottky (JBS) rectifiers are analyzed compared simulations experiments. Compared FLRs, experimental results present that first ring spacing window termination efficiency exceeds 80% of parallel plane breakdown voltage (BV) can be widened area reduced at same BV by adopting FLRs. The also indicate there is an optimal depth a smaller sidewall angle achieve better device...

A rigorous and systematic analytical-based parameter extraction technique for the augmented small-signal equivalent-circuit model dedicated to III-V-based heterojunction bipolar transistors (HBTs) is presented. The proposed method relies exclusively on S-parameters measured at low high frequencies. algorithm derived by peeling peripheral elements from equivalent circuit with very few simplified approximations throughout whole process. All of elements’ parameters considering base-collector...

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction terminated by field guard rings are designed, fabricated characterised. The measurements for forward reverse characteristics have been done, comparison with each other, it shows has a lower current density than of higher drop diode. High-temperature annealing is presented in this as well to figure out an optimised processing. height 0.79 eV formed Ti work, 2.1 V, ideality factor 3.2, blocking voltage 400 V was...

This paper investigates the current-voltage (I—V) characteristics of Al/Ti/4H—SiC Schottky barrier diodes (SBDs) in temperature range 77 K–500 K, which shows that SBDs have good rectifying behaviour. An abnormal behaviour, zero bias height decreases while ideality factor increases with decreasing (T), has been successfully interpreted by using thermionic emission theory Gaussian distribution heights due to inhomogeneous at Al/Ti/4H-SiC interface. The effective Richardson constant A* = 154...

High-temperature storage stressing (HTSS) experiments were carried out on high-voltage 4H-SiC junction barrier Schottky (JBS) diodes. The effects of the high-temperature (up to 275 °C) under air environment thermal stability JBS are investigated. electrical parameter shifts for tested diodes after HTSS investigated in detail, and related degradation mechanisms have been discussed. It is found that has no effect height, ideality factor (n), specific on-resistance (R <sub...

Based on an analytical surface potential model incorporating the channel inversion carriers, a physics-based terminal capacitance with closed-form solutions for hetero-gate-dielectric (HGD) tunnel field-effect transistor (TFET) is developed first time. Good agreements between proposed and numerical simulations have been achieved in all operation regimes different HGD structures. The without involving any iterative process can be easily applied to widely used SPICE would helpful transient...

Strains in graphene play a significant role graphene-based electronics, but many aspects of the grain boundary effects on strained remain unclear. Here, relationship between and strain property grown by chemical vapor deposition (CVD) C-face SiC substrate has been investigated Raman spectroscopy. It is shown that abundant boundary-like defects exist film blue-shifted 2D-band frequency, which results from compressive film, shifts downward linearly as 1/La increases. Strain relaxation caused...