A5058328385- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Silicon Carbide Semiconductor Technologies
- High-Energy Particle Collisions Research
- Advanced Semiconductor Detectors and Materials
- Advanced Thermodynamics and Statistical Mechanics
- Photonic and Optical Devices
- Economic and Business Development Strategies
- Semiconductor materials and interfaces
- 3D IC and TSV technologies
- Electrostatic Discharge in Electronics
- VLSI and Analog Circuit Testing
- Spectroscopy and Quantum Chemical Studies
- High Temperature Alloys and Creep
- Nuclear Materials and Properties
- Labor Market and Education
- High-Temperature Coating Behaviors
- Nuclear reactor physics and engineering
- GaN-based semiconductor devices and materials
- Particle physics theoretical and experimental studies
- Enterprise Management and Information Systems
- Nanopore and Nanochannel Transport Studies
- Gaussian Processes and Bayesian Inference
University of Science and Technology of China
2025
China Electronic Product Reliability and Environmental Test Institute
2021-2024
Shandong University
2022
China Guangzhou Analysis and Testing Center
2021
Xidian University
2017-2020
We have derived the Wigner equations at global equilibrium with constant vorticity but spacetime dependent electromagnetic fields up to second order in a semiclassical expansion. obtain new second-order contributions charge currents and energy-momentum tensor from varying fields. also compute corrections spin polarization pesudovector both find that field provides tighter constraint on solutions of functions compared field. Published by American Physical Society 2025
Based on an analytical surface potential and a simple mathematical approximation for the source depletion width, physics-based capacitance model with closed form silicon double-gate tunnel field-effect transistors (TFETs) is developed. Good agreements between proposed numerical simulations have been achieved, which reveal that tunneling carriers from negligible contribution to channel charges gate can be almost acted as gate-drain capacitance, quite different of MOSFETs. This without...
A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this are exhibited, taking the InAs/Si TFET as an example, and effects different device parameters analyzed in detail. Owing to gate field being parallel tunneling interface, control enhanced, a better electrical performance obtained. Moreover, from conventional TFET, which effective area current can hardly be modulated by length, our device, adjusted depending on actual requirements...
The fluid in global equilibrium must fulfill some constraints. These constraints can be derived from quantum statistical theory or kinetic theory. In this work, we show how these applied to determine the non-dissipative transport coefficients for chiral systems along with energy-momentum conservation, anomaly charge current and trace tensor.
We present a systematic method to derive the chiral kinetic theory from Wigner equations based on quantum field order by order. take special effort in seven-dimensional phase space eight-dimensional theory. give up second of semiclassical expansion. find some new second-order contributions compared with other approaches.
InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of temperature nucleation layer InP/Si epitaxial investigated systematically. Cross-section morphology, surface morphology and crystal quality characterized scanning electron microscope images, atomic force microscopy high-resolution X-ray diffraction (XRD), rocking curves reciprocal space maps. interface became smoother XRD peak intensity was stronger with at 350 °C....
Turbine blades in aircraft engines may encounter overheating and suffer serious creep property degradation. In this study, the thermal cycling experiments were conducted on K465 superalloy under (900 °C/30 min–1100 °C/3 min)/50 MPa, min–1150 MPa (1000 MPa. The investigated properties dramatically degraded, increasing temperatures significantly decreased life. secondary γ′ precipitates obviously dissolved area fraction to around 35.2% which was almost half that after standard solution...
InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome large lattice mismatch (8%) between layer Si substrate. The surface morphology microstructure investigated using an atomic force microscope (AFM) transmission electron microscopy (TEM). High-resolution X-ray diffraction (HR-XRD) measurements carried out characterize crystal quality. It found that a too thin will...
Bipolar ICs are playing an important role in military applications, mainly used logic gates, such as inverter and NAND gate. A metal break defect located on the step is one of main failure mechanisms bipolar ICs, resulting open-circuit or functional failure. In this situation, general localization methods like optical beam induced resistance change (OBIRCH) photon emission microscopy (PEM) might not be fully effective. However, active voltage contrast (AVC) can a probe, which may pinpoint...
A novel temperature analysis method for compound semiconductor integrated circuits based on iteration algorithm has been presented. The developed with efficient numerical calculation in MATLAB. This applied to a simple module including 9 devices and the calculated distribution compared simulated result by 3D simulation tool. obtained results demonstrate that ability calculate junction of circuit high accuracy, speed low computation.
The growth of the InAs film directly on Si substrate deflected from plane (100) at 4° towards (110) has been performed using a two-step procedure. effect and annealing temperature electron mobility surface topography investigated for set samples. results show that highest is in sample, which 10-nm nucleation layer grown low 320 °C followed by ramping up to 560 °C, was annealed 15 min second 520 °C. influence different buffer layers samples also investigated, shows 300 K obtained sample thick...
The InAs/AlSb heterostructures with step-graded GaAs x Sb 1 − metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. used to relax the strain and block defects at each interface of layers. Meanwhile, adding is also beneficial suppressing formation dislocations in subsequent materials. influences growth temperature layer electron mobility surface topography investigated for a series samples. Based atomic force microscopy (AFM), high resolution x-ray...
The fluid in global equilibrium must fulfill some constraints. These constraints can be derived from quantum statistical theory or kinetic theory. In this paper we will show that how these applied to determine the non-dissipative transport coefficients for chiral systems along with energy-momentum conservation, anomaly charge current and trace tensor.
As press-pack IGBTs (PP IGBTs) have been introduced to improve reliability and lifetime of IGBT module via avoiding the susceptibility wire-bonded due thermo-mechanical stress, corresponding PP has attracted attention by both manufacturers end users. In this paper, during product validation phase, three cases with failure modes relevant closely clamping process defects collected understand impacts lifetime. Base on study, deformation burnout metallization / dielectric layer, cracking active...