A5102315033- Silicon Carbide Semiconductor Technologies
- Multilevel Inverters and Converters
- Induction Heating and Inverter Technology
- Advanced DC-DC Converters
- Silicon and Solar Cell Technologies
- Electromagnetic Compatibility and Noise Suppression
- Electrostatic Discharge in Electronics
- MicroRNA in disease regulation
- Circular RNAs in diseases
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Heat Transfer and Optimization
- Epigenetics and DNA Methylation
- Cancer-related molecular mechanisms research
- Power Systems and Renewable Energy
- HVDC Systems and Fault Protection
- GaN-based semiconductor devices and materials
- Microgrid Control and Optimization
- RNA modifications and cancer
- Extracellular vesicles in disease
Beijing Solar Energy Research Institute
2024
Nanjing University of Chinese Medicine
2021-2023
Jiangsu Province Hospital
2021-2023
State Grid Corporation of China (China)
2018-2021
Beijing Jiaotong University
2014
Abstract Polycystic ovary syndrome (PCOS) is an endocrine and metabolic disorder characterized by chronic low-grade inflammation. Previous studies have demonstrated that the gut microbiome can affect host tissue cells’ mRNA N6-methyladenosine (m6A) modifications. This study aimed to understand role of intestinal flora in ovarian cells inflammation regulating m6A modification particularly inflammatory state PCOS. The composition PCOS Control groups was analyzed 16S rRNA sequencing, short...
Ovarian hyperstimulation syndrome (OHSS) is one of the most dangerous iatrogenic complications in controlled ovarian (COH). The exact molecular mechanism that induces OHSS remains unclear. In recent years, accumulating evidence found exosomal miRNAs participate many diseases reproductive system. However, specific role miRNAs, particularly follicular fluid-derived controversial. To identify differentially expressed fluid from and non-OHSS patients, analysis based on miRNA-sequence was...
This paper presents behavior of SiC MOSFET under short-circuit during the on-state conditions. Although much research has been conducted on characteristics first type MOSFETs, no reported second type. A set test benchs which can perform are designed. Simulation by LTspice combined with experiments to evaluate influences several important parameters like miller capacitance, gate resistance, gate-source voltage, drain-source voltage 1200 V/36 MOSFET.
Based on the third generation of semiconductor material, GaN device becomes obvious candidate for new POL converters. With development integration technology, planar transformer is applied miniaturization and high power density. LLC resonant converter with EPC eGaN FETs studies in this paper. First, difference from one silicon MOSFETs analyzed. Second, winding structure discussed, designed simulated by Maxwell 2D 3D finite element analysis (FEA). Finally, LTspice simulation developed, a...
Compared to the silicon power devices, carbide device has shorter switch time. Hence, as a result of faster transition voltage (dv/dt) and current (di/dt) in SiC MOSFET, influence parasitic parameters on MOSFET’s switching transient is more serious. This paper gives an experimental study inductance characteristics. Most significance are inductances gate driver loop loop. These include MOSFET package’s inductance, interconnect dc link PCB trace. therefore focuses analysis comparison different...
The parallel connection of multi-system matrix converters is an important technology to ensure the reliable operation smart grids, and it one hotspots current research. In this paper, three-phase power supplies, control module converter are used as a single system study situation that three systems connected in supply same load, conditions for given. Basing on improved PWM algorithm, simulation model established by using MATLAB. When fails parameters change, can automatically remove faulty...
In recent years, silicon carbide and other wide band gap semiconductors have become one of the strategic commanding heights in global high-technology field.As a semiconductor, SiC material which can be used to make device is paid much attention semiconductor power field due its advantages.Compared with Si device, achieve high switching speed low on-resistance.Because differences their characteristics, model different from device.In this paper, modeling simulation method MOSFET module...
In press-pack IGBT the currents flowing through paralleled chips are not consistent due to packaging structure, chip difference, uneven stress distribution and so on.The maximum current overshoot junction temperature of internal determine limitation device's application.A hierarchical modeling method based on geometry structure is proposed in this paper, a relatively more accurate device model established, which provides reliable practical for analyzing electrical characteristics branches...
This paper described a three-level circuit for power distribution system used in intelligent micro-grid and combines an ordinary T-type with RBIGBT. The topology of the was firstly introduced this paper, then author introduces modulation method double closed-loop control strategy based on RB-IGBT, afterwards model simulation built. losses RB-IGBT circuit, common IGBT two-level were analyzed, including calculation conduction switching loss detail. Then three circuits calculated. Finally,...
With the acceleration of energy transformation and development power grid equipment technology, capacity voltage level flexible DC transmission project are gradually improved. There is an urgent need for support semiconductor IGBT with higher larger capacity. As press-pack has two heat dissipation surfaces, each surface determined by proportion double-sided thermal resistance, existing test methods cannot determine both sides before obtaining resistance value. Firstly, this paper summarizes...
As press-pack IGBTs (PP IGBTs) have been introduced to improve reliability and lifetime of IGBT module via avoiding the susceptibility wire-bonded due thermo-mechanical stress, corresponding PP has attracted attention by both manufacturers end users. In this paper, during product validation phase, three cases with failure modes relevant closely clamping process defects collected understand impacts lifetime. Base on study, deformation burnout metallization / dielectric layer, cracking active...