A5055887546- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Silicon Carbide Semiconductor Technologies
- Radiation Effects in Electronics
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Advanced Sensor and Energy Harvesting Materials
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Microwave Engineering and Waveguides
- Advancements in PLL and VCO Technologies
- Photonic and Optical Devices
- 3D IC and TSV technologies
- Electronic and Structural Properties of Oxides
- GaN-based semiconductor devices and materials
- Low-power high-performance VLSI design
- Advanced Memory and Neural Computing
- Electromagnetic Compatibility and Noise Suppression
- Quantum Chromodynamics and Particle Interactions
- High-Energy Particle Collisions Research
- VLSI and FPGA Design Techniques
- Advancements in Photolithography Techniques
- Semiconductor Lasers and Optical Devices
Xidian University
2016-2025
Huawei Technologies (United Kingdom)
2025
Shanghai Special Equipment Supervision and Inspection Institute
2024
Huawei Technologies (China)
2023
Fudan University
2014
State Key Laboratory of ASIC and System
2014
Shanghai Fudan Microelectronics (China)
2014
The interactions of quarks and gluons are strong at non-perturbative region. equation state (EoS) a strongly-interacting quantum chromodynamics (QCD) medium can only be studied using the first-principle lattice QCD calculations. However, complicated EoS reproduced simple statistical formula by treating as free parton gas whose fundamental degree freedoms dressed called quasi-particles, with temperature-dependent masses. We use deep neural network auto differentiation to solve this...
Based on an analytical surface potential and a simple mathematical approximation for the source depletion width, physics-based capacitance model with closed form silicon double-gate tunnel field-effect transistors (TFETs) is developed. Good agreements between proposed numerical simulations have been achieved, which reveal that tunneling carriers from negligible contribution to channel charges gate can be almost acted as gate-drain capacitance, quite different of MOSFETs. This without...
This article presents a high-precision modeling method to build small signal model of GaAs pseudomorphic high electron mobility transistor (pHEMT) by using radial basis function artificial neural network (RBF ANN). Both the RBF ANN Method 1 that uniformly distributed spread constant (SC) in given range and 2 increasingly changed SC with chosen step have been modeled this work. Compared l 1, can automatically obtain optimal corresponding SC. The is developed for S-parameters equivalent...
Metal-insulator-metal (MIM) capacitors with full atomic-layer-deposition Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ZrO /SiO /Al stacks were explored for the first time. As incorporated SiO film thickness increased from 0 to 3 nm, quadratic and linear voltage coefficients of capacitance (α β) MIM reduced significantly positive values negative ones. For stack 3-nm film, a...
A novel line-tunneling field effect transistor (LTFET) incorporating a reversed p-i-n structure is introduced. The process provides high ION and low SS while the keeps IOFF independent on gate voltage. inclusion of this mixed conduction mechanism renders proposed device well-suited for designing complementary ternary logic based off-state current mechanism. designed inverter with static power dissipation suitable emerging neuromorphic applications where extremely significant. In addition,...
With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, electron mobility, breakdown voltage have become an important research topic in this field. It has been found that HEMT a drift threshold under conditions temperature gate stress changes. Under high-temperature conditions, difference contact also causes to shift. The variation affects stability device as well overall circuit performance....
With the rapid development of semiconductor technology, reduction in device operating voltage and threshold has made integrated circuits more susceptible to effects particle radiation. Moreover, as process sizes decrease, impact charge sharing becomes increasingly severe, with soft errors caused by single event becoming one main causes circuit failures. Therefore, study sensitivity evaluation methods for is great significance promoting optimization design, improving effect experimental...
A rigorous and systematic analytical-based parameter extraction technique for the augmented small-signal equivalent-circuit model dedicated to III-V-based heterojunction bipolar transistors (HBTs) is presented. The proposed method relies exclusively on S-parameters measured at low high frequencies. algorithm derived by peeling peripheral elements from equivalent circuit with very few simplified approximations throughout whole process. All of elements’ parameters considering base-collector...
Based on an analytical surface potential model incorporating the channel inversion carriers, a physics-based terminal capacitance with closed-form solutions for hetero-gate-dielectric (HGD) tunnel field-effect transistor (TFET) is developed first time. Good agreements between proposed and numerical simulations have been achieved in all operation regimes different HGD structures. The without involving any iterative process can be easily applied to widely used SPICE would helpful transient...
The proton-induced degradation for InP/InGaAs heterojunction bipolar transistors (HBTs) is studied based on the calculation in energy range from displacement damage threshold to 100 MeV with analytical model of nonionizing loss (NIEL). experiments 3 and 10 proton radiation HBTs have been performed, which significant current gain predominant. increase base due increased recombination responsible noticeable degradation. Qualitative comparison NIEL results coefficients made good correlation found.
In this paper, a universal analytical current model for double-gate Si-based tunnel field-effect transistor (TFET) is presented considering the effects of charges in source depletion region and channel. An accurate surface potential developed first by solving pseudo-2-D Poisson equations regions, then used to calculate drain tunneling current. The modeling results match well with that obtained from Technology computer-aided design simulations under various biasing conditions, which indicate...
The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, energy-band engineering InAs/Si heterojunction and novel device structure source-pocket concept are combined in a single transistor to extensively boost performance. proposed shows improved current subthreshold swing. addition, analytical potential model for developed tunneling also calculated. Good agreement modeled results with numerical simulations verifies validation our model....
The nanowire gate-all-around structure with the ultimate channel electrostatic integrity exhibits best immunity to short effects and improved scaling capability compared other multigate structures. In this article, both tunneling current capacitance models are developed simultaneously for field-effect transistors (FETs). Based on same surface potential model, model share common parameters therefore can be easily integrated as a complete circuit-level simulations. Moreover, there is no...
The HfO2/Al2O3 double layer has been deposited by the atomic deposition (ALD) technique to a InAlAs epitaxial layer. chemical composition at interface was revealed angle-resolved X-ray photoelectron spectroscopy (XPS). electrical properties of ALD-HfO2/Al2O3/InAlAs metal–oxide–semiconductor (MOS) capacitor have investigated and compared with those ALD-HfO2/InAlAs capacitor. It is demonstrated that insertion Al2O3 can decrease interfacial oxidation trap charge formation. Compared HfO2/InAlAs...