A5101547614- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Plasma Diagnostics and Applications
- Advanced DC-DC Converters
- GaN-based semiconductor devices and materials
- Pulsed Power Technology Applications
- Spectroscopy and Quantum Chemical Studies
- Advanced ceramic materials synthesis
- Force Microscopy Techniques and Applications
- Metal and Thin Film Mechanics
- thermodynamics and calorimetric analyses
- Advancements in Semiconductor Devices and Circuit Design
- Induction Heating and Inverter Technology
- Plasma Applications and Diagnostics
- Electromagnetic Compatibility and Noise Suppression
Xidian University
2010-2024
University of Manchester
2021
Wyoming Department of Education
1994
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTA Vibrational Spectroscopic Study of the Structure Electroactive Self-Assembled Monolayers Viologen DerivativesXiaoyan Tang, Thomas Schneider, and Daniel A. ButtryCite this: Langmuir 1994, 10, 7, 2235–2240Publication Date (Print):July 1, 1994Publication History Published online1 May 2002Published inissue 1 July 1994https://pubs.acs.org/doi/10.1021/la00019a034https://doi.org/10.1021/la00019a034research-articleACS PublicationsRequest reuse...
4H-SiC Junction Barrier Schottky diode with embedded P-layer (JBS-EPL) is reported in this paper. JBS-EPL has attractive advantages, such as remarkably increasing the breakdown voltage and decreasing power loss die area comparing conventional diode. The estimates for are proposed that can be used evaluating different structure design of devices.
For nominally identical GaN Schottky diodes prepared by resistive thermal evaporation and plasma sputter deposition, deposition were found to exhibit a clear increase in the reverse leakage current, which is about two orders of magnitude higher than using evaporation. Defects n-type fabricated sputtering gold investigated deep-level transient spectroscopy compared with those similar structures From deep level defects identified sputtered diode activation energies for charge carrier emission...