High performance organic thin-film transistors were demonstrated based on a cheap, commercially available semiconductor, titanyl phthalocyanine (TiOPc), in its α-phase structure. The high is due to ultra close π-stack and favorable edge-on molecular orientation the films. performance, remarkable stability, low price, nontoxicity, commercial availability of TiOPc suggest promising prospects OTFTs.

Ribbons of an air-stable, n-type organic single-crystal semiconductor, F16CuPc, are used to study photoswitches and phototransistors. High-quality, reversibly switching, fast together with strongly photodependent field-effect phototransistors (see figure) F16CuPc made. The high light sensitivity large on/off ratio the realize a new way detect magnify signals in single device, indicating future low-cost, ultrahigh density, photoelectric integration. Supporting information for this article is...

Organic single-crystalline nanoribbons are fabricated through an in situ patterning technique to yield various architectures. field-effect transistors based on such patterned (see figure) shown exhibit low threshold voltages and high carrier mobilities. This overcomes the general disadvantages of handpicking process for fabrication organic single-crystal devices opens up a new route architectures using nanocrystals. Supporting information this article is available WWW under...

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III–V semiconductors. Here, we demonstrate uniform, array-based InP with lateral dimensions as small sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) sulfuric acid (H2SO4), a purely solution-based yet anisotropic method. The mechanism of I-MacEtch, contrast to regular MacEtch, is explored through characterization....

III-V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally demonstrated for the first time. Source/drain resistance and thermal budget minimized by regrowth using metalorganic chemical vapor deposition instead of implantation. The fabricated short channel (Lg=80 nm) GaAs GAA NWFETs with extremely scaled NW width (WNW=9 exhibit excellent gm linearity at biases as low 300 mV, characterized high third intercept point (2.6 dbm). is insensitive to bias conditions, which...

The interfacial pyro-phototronic effect (IPPE) presents a novel approach for improving the performance of self-powered photodetectors (PDs) based on metal halide perovskites (MHPs). contact conditions within Schottky junctions are crucial in facilitating IPPE phenomenon. However, fabrication an ideal junction utilizing MHPs is challenging endeavor. In this study, we present surface passivation method aimed at enhancing inverted planar perovskite structures micro- and nanoscale metal-halide...

The efficient electrochemical CO2 reduction into value‐added multi‐carbon products is of great importance and remains challenging. Here, we demonstrate the highly selective, active long‐term durable electrocatalytic production ethylene from by constructing a Cu2O nano‐homojunction, which composed nanocubes in size ~100 nm surface‐adhered nanodots ~12 nm, as electrocatalyst. maximum Faradaic efficiency can reach 73.7% at −1.4 V versus reversible hydrogen electrode H‐type cell, with partial...

Producing densely packed high aspect ratio In0.53Ga0.47As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible III−V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate realization ordered, uniform, array-based pillars with diameters as small 200 nm using damage-free metal-assisted chemical (MacEtch)...

Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, energy ion implantation and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric HAR fin channel. Indium phosphide junctionless FinFETs, record (as as 50:1) demonstrated for...

Nanoscale data recording on high- quality crystalline thin films of N,N- dimethylanilino donor-substituted tricyanoethynylethene acceptors has been achieved by scanning tunneling microscopy with a storage density about 1013 bits cm–2 (see Figure). The is based an electric-field-induced intermolecular charge-transfer mechanism, which strongly influenced the ordered, antiparallel packing mode dipolar donor–acceptor molecules in film.

Nanostructures: A new air-stable π-extended condensed benzothiophene was prepared by starting from 4,8-dioctyl-oxybenzo[1,2-b:4,5-b′]dithiophene in about 54 % overall yield. Highly ordered 1D organic nanoribbons of the resultant compound were formed molecular self-assembly. An individual nanoribbon-based field-effect transistor (see figure) exhibited an average mobility 0.05 cm2 V−1 s−1.

Conventional junctionless (JL) multigate field-effect transistors (MuGFETs) use extremely scaled and highly doped fins as channels. Such small introduce large parasitic resistance well performance fluctuation due to fin width variations. The high channel doping significantly reduces bulk carrier mobility, which on-state current escalates short effect related leakage. In this letter, we present a step-doping scheme for the scaling of JL MuGFETs. By employing two-step-doping profile, with side...

A physical, compact, short-channel sub-threshold swing model for undoped-gate MOSFETs has been developed to include the fringe-induced barrier lowering effect associated with high-permittivity (high-κ) gate dielectrics. Using this new device model, we found that degradation becomes worse when channel length shorter and both off-state current (Ioff) slope(s) rollup κ is increased. It indicated a way keep reasonable length/vertical physical thickness ratio could be suppress FIBL in nanoscale...

Nowadays, the study of brain function is advanced by implantable microelectrode arrays for they can simultaneously record signals from different groups neurons regarding complex neural processes. This article presents fabrication, characterization and use in vivo recording an array probe which integrated with electrophysiology reference electrode. The was implemented on Silicon-On-Insulator (SOI) wafer using Micro-Electro-Mechanical-Systems (MEMS) methods, so recording-site configurations...

In this paper, design and optimization considerations for bulk gate-all-around nanowire MOSFETs have been investigated based on calibrated three-dimensional quantum correction numerical simulation. As device parasitical parameters play a crucial role in the of overall performance nanoscale MOSFETs, we placed great emphasis projecting insights into parasitic grooved-gate transistor source/drain (S/D) extension region. Furthermore, taking several important electrical such as Vth, Ion, Ioff,...

The optimal operation model of AC/DC distribution network with energy router (ER) is essentially a nonconvex nonlinear programming (NLP) problem. In order to improve the feasibility solving model, convex approximation algorithm proposed in this work. steady-state ER developed considering loss characteristics and multiport coordinated control strategy. It embedded optimization formulations as basic operating equations. Then, using second-order cone relaxation technology, power flow equations...

Damage-free metal-assisted chemical etching (MacEtch) was used to fabricate InP junctionless FinFETs with ultra-high aspect ratio (~ 45:1) fins. For devices L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> = 560 nm, 20 - 32 nm fin width, and 600 active height, I xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /I xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ~ 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> ,...

A novel electrochemical tyrosinase biosensor based on ordered graphitized mesoporous carbon (GMC) was obtained, which used as a platform for phenol detection. The accuracy of method comparatively evaluated by high performance liquid chromatography (HPLC). By entrapping molecules (6.5 nm x 9.8 5.5 nm) into the mesopores GMC (diameter 10 nm, GMC10), "interspace confinement effect" GMC10 may improve stability in vitro. After 21-day storage, GMC10-based retained more than 85% its initial...