Makoto Miakashi
A5042920403- Advanced Data Storage Technologies
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Copper Interconnects and Reliability
- Cellular Automata and Applications
Toshiba (Japan)
2012-2019
The first multi-layer stacked 3D Flash memory was proposed as BiCS FLASH in 2007 [1]. Since then, bit density has grown rapidly due to the increase number of layers from continuous technology innovations. On other hand, multi-level-cell technology, which initially for 2D Flash, also been adopted memories. 3b/cell 32-layer presented 2015 [2], followed by a 48-layer one 2016 [3], and 64-layer 2017 [4,5]. This paper describes 512Gb 96-word-line-layer technology. work implements three key...
A 1.33-Tb 4-bit/cell quadruple-level (QLC) 3-D flash memory in a 96-word-line (WL)-layer technology that achieves 8.5 Gb/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> has been developed. This is the biggest capacity and highest bit density ever reported. source-bias-negative-sense with CLK-control allows deep negative V <sub xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> sensing while maintaining low supply voltage. new...
Since 3D-Flash memory took over for 2D-Flash memory, chip capacity has continuously improved [1-3]. In the era, 2b/cell (MLC) offered higher performance and reliability, while a 3b/cell (TLC) lowest cost. Thanks to larger feature size, 3D Flash cell reliability is much better than that of 2D. As result, TLC became mainstream non-volatile since it satisfies most market requirements in both reliability. To meet growing demand lower cost, 4b/cell (QLC) 96-WL-layer technology presented. It...
NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities improving performance have helped to expand markets. Recently, there are two different directions meet market demands. One cost increase density the utmost limit, which achieved by 4b/cell [1] or 3b/cell [2]. The other focusing on high reliability. To both demands, we develop a 19nm 112.8mm <sup...