This Letter demonstrates a high-performance 3.3 kV-class β-Ga2O3 vertical heterojunction diode (HJD) along with an investigation into its off-state leakage mechanism. The HJD field plate assisted deep mesa (FPDM) termination was fabricated using self-aligned technique to etch the depth of 9 μm, thereby reducing electric crowding at anode edge. In addition, thick dielectric is deposited fill trench, facilitating utilization further reduce TCAD (Technology Computer Aided Design) simulations...

Tight stacking between two-dimensional (2D) sheet-like materials, such as graphene, in the solid state is a major challenge hindering their applications, especially gas sensing field. Here, we report on TiO2 nanoparticle-spaced reduced graphene oxide (RGO) assembly for design of highly sensitive sensors. The nanospacers are derived from 2D MXene that intercalated RGO sheets. produced TiO2-spaced exhibits uniform nanoparticle distribution and wrinkled sheets interconnect micrometer-scale...

In order to obtain high catalytic performance of CO2 hydrogenation methanol, mesostructured Cu–ZnO/Al2O3–ZrO2 (CZAZ) catalysts were prepared, and the microstructure surface properties optimized by weight ratio Al2O3 ZrO2. Due uniform mesoporous structure strong interaction Cu with support, CZAZ-8 catalyst (Al2O3 amount in Al2O3–ZrO2 was 80%) had a higher active area metallic more interfaces adsorption sites, which promoted conversion. addition, ZrO2 added supports endowed basic surface,...

The electrical performance of 4H-SiC Power MOSFETs is studied at temperatures from 93K to 473K. With the decrease operation temperature, threshold voltage found increase linearly whereas on-resistance shows a minimum value within whole temperature range. rapid lower ascribed presence large densities interface traps SiC/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface. In addition, breakdown also measured down and...

Short circuit capability of a 1200V SiC MOSFET and Si IGBT is compared analyzed in this work, the channel mobility over broad temperature range from room up to 2000 °C has been extracted for first time. Experimental results show that exhibits shorter short withstand time (SCWT) IGBT. 1-D transient finite element thermal models MOSFETs IGBTs have implemented simulate dynamic profiles devices during tests. The junction rises much faster than heat spreading thickness narrower, leading SCWT...

An AB- and AA-stacked bilayer graphene sheet (BLG) under an electric field is investigated by ab initio calculation. The interlayer distance between the two layers, band structures, atomic charges of system are in presence different fields normal to BLG. AB-stacked BLG able tune bandgap into 0.234 eV with increase external electronic 1 V/nm, however, not sensitive field. In both cases, spacing slightly change terms increased field, which considered be reason that causes opening

In this study, bone char pretreated with hydrogen peroxide and traditional pyrolysis was applied to remove Cd2+ from aqueous solutions. After pretreatment, the organic matter content of significantly decreased, while surface area, negative charge number oxygen-containing functional groups on increased. being pyrolyzed, specific area material were further improved. The adsorption kinetics isotherms studied, influence solution pH presence ionic species investigated. experimental results showed...

Timely and correctly evaluating the quality of Global Positioning System (GPS) data is essential for reduction in number false alarms missed detection a GPS-based bridge deformation monitoring system. This paper investigates how to use statistical process control technique, known as cumulative sum (CUSUM) chart, small but persistent shifts high-rate GPS carrier-phase measurements. First, mathematical model shift based on continuous hypothesis testing established. The main features...

Nowadays it is a heated interest to apply neuroscience knowledge social sciences. Following the neuromanagement, neurotourism coined and discussed by authors. Neurotourism mainly explores neural mechanism underlying tourists’ behaviors aims advance tourism research. Neuroscience tools can obtain objective neurophysiology data from human body, serving as potential measurements of some constructs such happiness, satisfaction revisiting intention. Besides, also capture record cognitive...

Along with the rapid growth in electric vehicle (EV) market, higher power density and more efficient motor drive inverters are required. It is well known that silicon carbide (SiC) has advantages of high temperature, efficiency switching frequency. believed appropriate utilization these merits can pave way to ultra-high inverters. This paper presents issues about SiC chip’s current-carrying capability enhancement which crucial for a compact inverter tens hundreds kilowatts. Technical...

In this article, the avalanche capability of 1.2-kV 4H-SiC junction barrier Schottky (JBS) and merged p-i-n (MPS) diodes is investigated through simulation experiments. For MPS diodes, width wide P+ region (W) found to have great effects on device capability. with varied W-values (3-20 μm) JBS diode are designed fabricated, their energy/current tested unclamped inductive switching tests. The experimental results show that has an optimized at W = 8-μm design. Simulation study reveals current...

This article presents the design and fabrication results of silicon carbide (SiC) super-junction Schottky barrier diode (SBD). The impact two key device structure parameters, i.e., mesa width (MW) trench (TW), on forward reverse performance is studied by numeric simulations measurements. Furthermore, a simple efficient termination structure, wide-trench termination, proposed to protect edge. With this simulated breakdown voltage significantly increased from 1423 2600 V with (WTW) larger than...

This work demonstrates 4H-SiC high voltage lateral MOSFETs with double-reduced surface fields (RESURFs) technology. The device design has been performed to balance electric field distribution and enhance the blocking capability. Consequently, experimental results show a significant improvement in breakdown (BV), highest BV reaching 1800 V. A Baliga's figure of merit (BFOM) 128 MW/cm2 achieved, which is best performance among reported SiC MOSFETs. Detailed analysis are, furthermore, conducted...

In this letter, 4H-SiC high-voltage lateral junction barrier Schottky (LJBS) diodes are optimized by simulation and demonstrated experimentally. With the utilization of DOUBLE-RESURFs structure, devices have a more balanced electric field distribution, thereby enhancing blocking ability. For three design values drift region length <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L_D</i> (10μm, 12μm 15μm), exhibit maximum breakdown...

In this paper, the single pulse avalanche ruggedness of commercially available silicon carbide (SiC) power planar and trench MOSFETs is compared analyzed. A test bench constructed for unclamped inductive switching (UIS) tests. The experimental results show that at same current, maximum energy per area MOSFET least 8 times higher than MOSFET. SOA demonstrated. Junction temperature estimated by theoretical relationship between voltage current p-n junction under breakdown condition typical...

Fluorescent anti-counterfeiting technology has been widely reported for its advantages, such as easy identification and multiple functions. Most of the current fluorescent materials focus on innovation mode. However, stability is a prerequisite applying determining whether material can be used. Inspired by water stains, we report nanoparticles that are easily prepared inkjet printable have functions high stability. They applied successfully to anti-counterfeiting. 3D printed microreactors...

This paper demonstrates a SiC lateral MOSFET (LMOS) with DOUBLE RESURFs (reduce surface field) technology to improve the device's breakdown voltage. The electrical characteristics and analysis of fabricated LMOS are carried out in terms output, transfer blocking characteristics, as well leakage current mechanisms. In particular, effect length P-top on device performance is studied. experimental results indicate that <tex xmlns:mml="http://www.w3.org/1998/Math/MathML"...

In this paper, the short circuit robustness of SiC trench MOSFETs is analyzed and compared with planar MOSFETs. Thermal simulation during operations are studied in work. A test bench constructed for tests Commercially available 650V similar rated voltage on-state resistance tested. From experimental results, MOSFET fails much earlier than Planar MOSFET. The results aid one dimensional finite element thermal model. model based on structure parameters. According to model, dominant factor a...