A5101929085- Integrated Circuits and Semiconductor Failure Analysis
- Near-Field Optical Microscopy
- Finite Group Theory Research
- Advanced Topics in Algebra
- Physics and Engineering Research Articles
- Thin-Film Transistor Technologies
- graph theory and CDMA systems
- Nanowire Synthesis and Applications
- Plasmonic and Surface Plasmon Research
- Numerical methods for differential equations
- Silicon and Solar Cell Technologies
- Geometric and Algebraic Topology
- Quantum Dots Synthesis And Properties
- Advanced Electron Microscopy Techniques and Applications
- Advanced Operator Algebra Research
- Optical Coatings and Gratings
- Advanced Topology and Set Theory
- Mathematics and Applications
- Homotopy and Cohomology in Algebraic Topology
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Dental materials and restorations
- Photonic Crystals and Applications
- Microwave-Assisted Synthesis and Applications
Semmelweis University
2015-2023
Physikalisch-Technische Bundesanstalt
2013-2018
Robert Koch Institute
2011-2017
Eötvös Loránd University
1982-2011
GlobalFoundries (Germany)
2009-2011
Fraunhofer Institute for Photonic Microsystems
2009-2011
Paderborn University
1992-1995
RWTÜV (Germany)
1986
RWTH Aachen University
1977-1985
Institute for Computer Science and Control
1982
We demonstrate scanning near-field optical microscopy with a spatial resolution below 100 nm by using low intensity broadband synchrotron radiation in the IR regime. The use of such source opens up possibility to perform nano-Fourier-transform infrared spectroscopy over wide spectral range.
We describe the application of scattering-type near-field optical microscopy to characterize various semiconducting materials using electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source.For verifying high-resolution imaging and nano-FTIR spectroscopy we performed scans across nanoscale Si-based surface structures.The obtained results demonstrate that spatial resolution below 40 nm can be achieved, despite use source with an extremely broad emission...
Nanoscale plasmonic phenomena observed in single and bilayers of molybdenum disulfide (MoS 2 ) on silicon dioxide (SiO are reported.A scattering type scanning near-field optical microscope (s-SNOM) with a broadband synchrotron radiation (SR) infrared source was used.We also present complementary mapping using tunable CO 2laser radiation.Specifically, there is correlation the topography welldefined MoS islands grown by chemical vapor deposition, as determined atomic force microscopy, (IR)...
A main challenge in understanding the structure of a cell membrane and its interactions with drugs is ability to chemically study different molecular species on nanoscale. We have achieved this for model system consisting mixed monolayers (MLs) biologically relevant phospholipid 1,2-distearoyl-sn-glycero-phosphatidylcholine antibiotic surfactin. By employing nano-infrared (IR) microscopy spectroscopy combination atomic force imaging, it was possible identify detect domain formation two...
Synchrotron radiation-based nano-FTIR spectroscopy utilizes the highly brilliant and ultra-broadband infrared (IR) radiation provided by electron storage rings for spectroscopic characterization of samples at nanoscale. In order to exploit full potential this approach we investigated influence properties source, such as bunch shape spectral bandwidth emitted radiation, on near-field spectra silicon-carbide (SiC). The adapted configuration ring optics enables a modification transverse profile...
The morphology and structure of biological nanoparticles, such as viruses, can be efficiently analysed by transmission electron microscopy (TEM).
Local stress fields in strained silicon structures important for CMOS technology are essentially related to size effects and properties of involved materials. In the present investigation, Raman spectroscopy was utilized analyze distribution within (sSi) silicon-germanium (SiGe) island structures. As a result structuring initially unpatterned films, size-dependent relaxation intrinsic film stresses obtained agreement with model calculations. This changed state features also results...
Strained Ge1-xSnx thin films have recently attracted a lot of attention as promising high mobility or light emitting materials for future micro- and optoelectronic devices. While they can be grown nowadays with crystal quality, the mechanism by which strain energy is relieved upon thermal treatments remains speculative. To this end, we investigated evolution (and interplay) composition, strain, morphology strained Ge0.94Sn0.06 temperature. We observed diffusion-driven formation Sn-enriched...
Strained silicon underneath the field-effect transistor gate increases significantly charge carrier mobility and thus improves performance of leading-edge Complementary Metal Oxide Semiconductor (CMOS) devices. For better understanding structure-strain relationship on nanoscale for optimization device structures, measurement local strain state has become essential. Raman spectroscopy is used in present investigation to analyze distribution close silicon/embedded silicon-germanium (SiGe) line...
We demonstrate scanning near-field optical microscopy with a spatial resolution below 100 nm by using broadband synchrotron radiation in the infrared range provided Metrology Light Source. This approach opens up possibility to perform Fourier transform spectroscopy on nanoscale.
Abstract This paper deals with the Neumann problem of pre‐Maxwell partial differential equations equation image for a vector field v defined in region G ⊂ R 3 . We approximate its uniquely determined solution (integrability conditions assumed) uniformly on by explicitly computable particular integrals and linear combinations fields “fundamental” sequence points
This publisher's note amends the Acknowledgments of a recent publication [Opt. Express24, 1154 (2016)10.1364/OE.24.001154].