A5058107795- Copper Interconnects and Reliability
- Magnetic properties of thin films
- Hydraulic Fracturing and Reservoir Analysis
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Drilling and Well Engineering
- Metal and Thin Film Mechanics
- Oil and Gas Production Techniques
- Electronic Packaging and Soldering Technologies
- Microstructure and mechanical properties
- Force Microscopy Techniques and Applications
- 3D IC and TSV technologies
- Magnetic Properties and Applications
- Advanced Surface Polishing Techniques
- Reservoir Engineering and Simulation Methods
- Near-Field Optical Microscopy
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Metallic Glasses and Amorphous Alloys
- X-ray Spectroscopy and Fluorescence Analysis
- Numerical methods in engineering
- Thin-Film Transistor Technologies
- Composite Material Mechanics
- Nanowire Synthesis and Applications
- Theoretical and Computational Physics
GlobalFoundries (Germany)
2011-2025
ExxonMobil (Germany)
2007-2018
ExxonMobil (United States)
1995-2015
GlobalFoundries (United States)
2011
TU Dresden
1996-2010
Advanced Micro Devices (Canada)
2007-2008
Leibniz Institute for Solid State and Materials Research
1999-2006
Leibniz Association
2003
Leibniz Institute for Neurobiology
2000-2002
Naval Postgraduate School
1995
Three-dimensional integration with through-silicon vias (TSVs) has emerged as an effective solution to overcome the wiring limit imposed on device density and performance. However, thermal stresses induced in TSV structures raise serious thermomechanical reliability concerns. In this paper, we analyze near-surface stress distribution a structure based semi-analytic approach finite element method, comparison micro-Raman measurements. particular, depth dependence of effect elastic anisotropy...
One of the challenges in semiconductor industry is to find new barrier materials and copper (Cu) alternative solutions interconnects. In this work, we focused diffusion materials. Different binary (CoMo, CoRu, CoTa, CoW, MoRu, RuTa, RuW) ternary (CoMoTa, CoRuTa, MoRuTa) metal alloys were evaluated theoretically with Miedema model amorphous phase composition range. Afterward, thin films various compositions deposited by magnetron sputtering theoretical values compared experimental results....
In this paper, intensity enhancements of the Raman signal from strained silicon films utilizing tip enhanced spectroscopy (TERS) effect are reported. Specially shaped metallized atomic force microscopy tips have been prepared by sputter deposition thin silver onto sharpened quartz and subsequent focused ion beam (FIB) modification. more than 20%, which attributed to film 70nm thickness only, obtained due approaching TERS laser spot. On samples with patterned trench structures FIB milling,...
The authors investigate the effect of laser-induced heating on Raman measurements for different unpatterned and patterned substrates, including pure silicon, strained-silicon-on-insulator, silicon-germanium layers silicon. relationship between incident power laser used is derived much stronger effects line island structures are shown. Additionally, enormous isolated silicon particles within beam was investigated. measured shifts clearly show that has to be considered even moderate intensity...
Two different multilayer Laue lens designs were made with total deposition thicknesses of 48 µm and 53 µm, focal lengths 20.0 mm 12.5 at keV, respectively. From these two systems, several lenses manufactured for one- two-dimensional focusing. The latter is realised a directly bonded assembly crossed lenses, that reduces the distance between in beam direction to 30 eliminates necessity producing systems. Characterization fabrication was performed using laboratory X-ray microscope. Focusing...
Co/Cu multilayers with individual layer thickness corresponding to the second maximum of antiferromagnetic coupling were investigated as an attractive system for applications utilizing giant magnetoresistance (GMR). Annealing causes distinct changes in transport and magnetic properties multilayers. To obtain a deeper understanding triggering mechanisms, variations lattice structure occurring during heat treatment studied by x-ray diffraction electron microscopy. Structural observed according...
Ni 80 Fe 20 /Cu and Co/Cu multilayers with Cu layer thicknesses corresponding to the first second antiferromagnetic (afm) coupling maximum were prepared by dc-magnetron sputtering investigated respect their annealing behavior. The as-deposited films showed giant magnetoresistance (GMR) up 50% at room temperature. behavior of belonging same thickness is found be very similar 200 °C. For both kind a about 1 nm (first afm maximum) GMR degrades upon in excess 140 However, 2 (second are stable...
Straining the active regions in MOSFET devices is one of key contributors to increase device performance present and future technology nodes. Since dedicated strain on transistor level required with opposite sign for NMOS PMOS transistors, need measure locally has become a challenge analytics metrology. Raman spectroscopy capable obtaining information non‐destructively sub‐μm scale, therefore, this technique been considered process monitoring. In paper it will be shown silicon‐germanium thin...
Nickel oxide thin films with a thickness of 100 nm were deposited on oxidized silicon wafers by rf magnetron sputtering from NiO target in an Ar (nonreactive case) and Ar+O2 atmosphere various oxygen contents (reactive cases). The as-deposited possess high compressive stresses (up to 3700 MPa) which decrease irreversibly during annealing between 150 500 °C. Compositional microstructural analyses performed annealed means electron probe microanalysis, transmission microscopy, x-ray...
Abstract As operators continue to develop prospects in expensive, deep water environments, delivery of high rate, capacity, long life wells become essential for economic success. Often, are drilling angle, open hole maximize production by capturing reserves from several sand packages one wellbore. In many today's deepwater applications, stability and shale inhibition keys a successful completion. Nonaqueous fluid (NAF) is the preferred system optimize section, but can be problematic during...
It is shown that Raman intensities of bulk and film in silicon-on-insulator substrates strongly depend on the incident angle exciting laser. In a backscattering geometry with perpendicular laser incidence, deflection at particles or atomic force microscopy tips can thereby lead to selective enhancement signal, which be misinterpreted as surface/tip enhanced scattering. The authors report strong effects by scattering dielectric silicon well smaller for tips. evaluating field enhancements such...
Abstract In this paper, a novel micromachined scanning thermal microscopy (SThM) microcantilever with sharp, conductive platinum tip is proposed for temperature and conductivity measurements in sub‐micron structures of micro‐ nanoelectronic components. The idea physical background SThM operation presented, together brief description probes example images planar polycrystalline‐silicon microfuse obtained using passive‐ active‐mode SThM.