A5076439557- Advanced X-ray Imaging Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- X-ray Spectroscopy and Fluorescence Analysis
- Advanced Electron Microscopy Techniques and Applications
- Metal and Thin Film Mechanics
- Advancements in Photolithography Techniques
- Advanced Surface Polishing Techniques
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Diamond and Carbon-based Materials Research
- Force Microscopy Techniques and Applications
- Copper Interconnects and Reliability
- Electron and X-Ray Spectroscopy Techniques
- Advanced materials and composites
- Advanced MEMS and NEMS Technologies
- Pediatric Urology and Nephrology Studies
- Laser-Plasma Interactions and Diagnostics
- Calibration and Measurement Techniques
- Hydrogen Storage and Materials
- Crystallography and Radiation Phenomena
- Glaucoma and retinal disorders
- Machine Learning in Materials Science
- Protein Interaction Studies and Fluorescence Analysis
- Electronic Packaging and Soldering Technologies
- X-ray Diffraction in Crystallography
AXO Dresden (Germany)
2014-2024
Fraunhofer Institute for Ceramic Technologies and Systems
2014-2018
Brandenburg University of Technology Cottbus-Senftenberg
2014
TU Dresden
2010-2014
Fraunhofer Institute for Nondestructive Testing
2011-2013
Ingenieurgesellschaft für Zuverlässigkeit und Prozessmodellierung (Germany)
2013
Fraunhofer Society
2012
GlobalFoundries (Germany)
2010
We demonstrate full-field X-ray microscopy using crossed multilayer Laue lenses (MLL). Two partial MLLs are prepared out of a 48 μm high stack consisting 2451 alternating zones WSi2 and Si. They assembled perpendicularly in series to obtain two-dimensional imaging. Experiments done laboratory microscope Cu-Kα radiation (E = 8.05 keV, focal length f 8.0 mm). Sub-100 nm resolution is demonstrated without mixed-order imaging at an appropriate position the image plane. Although existing...
Two different multilayer Laue lens designs were made with total deposition thicknesses of 48 µm and 53 µm, focal lengths 20.0 mm 12.5 at keV, respectively. From these two systems, several lenses manufactured for one- two-dimensional focusing. The latter is realised a directly bonded assembly crossed lenses, that reduces the distance between in beam direction to 30 eliminates necessity producing systems. Characterization fabrication was performed using laboratory X-ray microscope. Focusing...
Point focusing measurements using pairs of directly bonded crossed multilayer Laue lenses (MLLs) are reported. Several flat and wedged MLLs have been fabricated out a single deposition assembled to realise point devices. The manufactured by adding stress layer onto lenses. Subsequent bending the structure changes relative orientation interfaces towards stress-wedged geometry. characterization at ESRF beamline ID13 photon energy 10.5 keV demonstrated nearly diffraction-limited clean spot 43...
Diffraction-limited hard X-ray optics are key components for high-resolution microscopy, in particular upcoming synchrotron radiation sources with ultra-low emittance. Diffractive like multilayer Laue lenses (MLL) have the potential to reach unprecedented numerical apertures (NA) when used a crossed geometry of two one-dimensionally focusing lenses. However, minuscule fluctuations manufacturing process and technical limitations high NA can prevent diffraction-limited performance. We present...
Multilayer laue lenses are diffractive optics with a high potential for producing X-ray foci in the order of 10 nm or even below. Particularly hard X-rays (E > 6 keV) these promise better resolution and higher efficiencies than currently available Fresnel zone plates.
Lab‐based Transmission X‐ray Microscopy and Computed Tomography (TXM/XCT) with sub‐100 nm resolution are evaluated for their application in process quality control microelectronics, particularly TSV characterization. These the techniques of choice to localize defects copper TSVs 3D IC integration. In contrast other like Focused Ion Beam cross‐sectioning subsequent Scanning Electron imaging, region interest, i.e. TSV, is imaged nondestructively three dimensionally. For flat samples thinned...
Laboratory transmission X-ray microscopy with a spatial resolution of about 100 nm was used to image 3D interconnect structures and failures in microchips during mechanical loading, applied by microDouble Cantilever Beam (micro-DCB) test. High-resolution sequences based on nano computed tomography (nano-XCT) are visualize crack opening propagation fully integrated multilevel on-chip circuits. The nondestructive investigation sub-micron cracks the in-situ micro-DCB test allows one identify...
In order to interpret the mechanical response of thin films subjected scratch tests, it is necessary elucidate local stress distributions and microstructural changes accompanying deformation across track area. Here, 50 nm synchrotron cross-sectional X-ray nanodiffraction electron microscopy are used characterize nanoscale multiaxial residual gradients irreversible microstructural-morphological a brittle-ductile film consisting 1.2 2 μm thick CrN Cr sublayers. The experimental results reveal...
Abstract The reduced modulus, ER , of elastically anisotropic materials (Si, CaF2 and MgF2) was determined for sub-10 nm, several-10 nm several-100 indentation depths, applying the Hertzian Oliver–Pharr approaches. values Si(100), Si(111), CaF2(100) MgF2(100) deforming at indentations (i.e. 135 GPa, 177 142 GPa 168 GPa) are in good agreement with theoretical unidirectional 125 173 160 GPa). With increasing penetration depth up to gradually deviate from weighted averaged values. remains...
We report on recent results of focusing experiments with monolithic assembled multilayer Laue lenses (MLLs) at ESRF ID13 a focal length 9.5 mm an X-ray photon energy 12.7 keV. Using aperture approximately 40 \textmu m we have achieved size the profiles less than 25 nm in horizontal and vertical direction physical working distance 2.5 mm. The current MLL mounting approach is aiming for reduction two crossed lenses. Assuming identical both ideally downstream surface to should be smaller depth...
The time dependent dielectric breakdown (TDDB) in copper/ultra‐low‐k on‐chip interconnect stacks of integrated circuits has become one the most critical reliability concerns recent years. In this paper, a novel experimental situ microscopy approach using transmission X‐ray (TXM) and scanning electron (STEM) is proposed to study TDDB degradation failure mechanisms. It combines electrical testing imaging techniques. Low‐dose bright field (BF) STEM inserting small condenser aperture chosen...
3D integration through silicon technology of integrated circuits challenges non‐destructive testing methods. x‐ray methods are the techniques choice to localize defects in interconnects. The development high‐power sources enabled use microscopy laboratory tools. Those devices able resolve features down 40 nm an acceptable measurement time. However, field view is very limited 16 μm high‐resolution mode and 65 large‐field‐of‐view mode. To record tomography data, size samples must not exceed...
Hard X-ray nanotomography is a commonly used tool in many research areas such as material science, biology and medicine. The station at the P05 imaging beamline PETRA III DESY operated by Helmholtz-Zentrum Hereon optimized for full-field nanoimaging techniques. It offers spatial resolutions down to below 50 nm, well high temporal resolution. technical design allows flexibility situ experiments. two major techniques offered user community are transmission microscopy with optionally Zernike...
This study captures the time-dependent dielectric breakdown kinetics in nanoscale Cu/low-k interconnect structures, applying in-situ transmission electron microscopy (TEM) imaging and post-mortem spectroscopic (ESI). A "tip-to-tip" test structure an experimental methodology were established to observe localized damage mechanisms under a constant voltage stress as function of time. In with partly breached barriers, TEM shows Cu nanoparticle formation, agglomeration movement porous...
Advanced packaging processes and the resulting 3D products challenge process quality control. X-ray imaging computed tomography (XCT) provide non-destructive characterization capabilities on specimens across a range of length scales, observing features with sizes spanning from millimeters over micrometers down to several 10 nanometers. They are techniques choice for two- or three-dimensional inspection medium small sized objects resolution nm. In this paper, potential limits XCT development,...
Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – 8, 2013.