Junyeong Lee

ORCID: 0000-0002-6160-9608
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Advanced biosensing and bioanalysis techniques
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Thin-Film Transistor Technologies
  • Organic Electronics and Photovoltaics
  • Gas Sensing Nanomaterials and Sensors
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Molecular Junctions and Nanostructures
  • Transition Metal Oxide Nanomaterials
  • DNA and Biological Computing
  • Semiconductor materials and interfaces
  • Quantum Dots Synthesis And Properties
  • Quantum-Dot Cellular Automata
  • Nanowire Synthesis and Applications
  • Advanced Semiconductor Detectors and Materials
  • Perovskite Materials and Applications
  • Advanced Sensor and Energy Harvesting Materials

Kyungpook National University
2022

Yonsei University
2013-2017

Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal semiconductor hybrid phototransistors with photodetection capability between 700 and 1400...

10.1038/am.2015.137 article EN cc-by NPG Asia Materials 2016-01-01

We have fabricated dual gate field effect transistors (FETs) with 12 nm-thin black phosphorus (BP) channel on glass substrate, where our BP FETs a patterned-gate architecture 30 nm-thick Al2O3 dielectrics top and bottom of channel. Top dielectric has simultaneously been used as device encapsulation layer, controlling the threshold voltage well when mainly operate under bias. Bottom, top, gate-controlling mobilities were estimated to be 277, 92, 213 cm2/V s, respectively. Maximum ON-current...

10.1021/acs.nanolett.5b01746 article EN Nano Letters 2015-08-14

2D van der Waals atomic crystal materials have great potential for use in future nanoscale electronic and optoelectronic applications owing to their unique properties such as a tunable energy band gap according thickness or number of layers. Recently, black phosphorous (BP) has attracted significant interest because it is single‐component material like graphene high mobility, direct gap, exhibits ambipolar transition behavior. This study reports on charge injection memory field‐effect...

10.1002/adfm.201602113 article EN Advanced Functional Materials 2016-06-07

DNA-base small molecules of guanine, cytosine, adenine, and thymine construct the DNA double helix structure with hydrogen bonding, they possess such a variety intrinsic benefits as natural plentitude, biodegradability, biofunctionality, low cost, toxicity. On basis these advantages, here, we report on unprecedented useful applications guanine layer getter charge trapping when it is embedded into dielectric oxide n-channel inorganic InGaZnO p-channel organic heptazole field effect...

10.1021/am405998d article EN ACS Applied Materials & Interfaces 2014-02-10

Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with decent voltage gain ≈12, few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this CMOS inverter operates as light-detecting pixel well, using thin MoS2 channel.

10.1002/smll.201402950 article EN Small 2015-01-15

Charge injection memory transistors are demonstrated to be promising as a result of the unique properties MoS<sub>2</sub> nanosheet channel and guanine trapping layer.

10.1039/c4tc00679h article EN Journal of Materials Chemistry C 2014-01-01

Layer-release techniques for producing freestanding III-V epitaxial layers have been actively developed heterointegration of single-crystalline compound semiconductors with Si platforms. However, the release target from heterostructures, it is required to embed a mechanically or chemically weak sacrificial buffer beneath layers. This requirement severely limits scope processable materials and their epi-structures makes growth layer-release process complicated. Here, we report that in...

10.1126/sciadv.abl6406 article EN cc-by-nc Science Advances 2022-01-21

Although organic field-effect transistors (OFETs) have various advantages of lightweight, low-cost, mechanical flexibility, and nowadays even higher mobility than amorphous Si-based FET, stability issue under bias ambient condition critically hinder its practical application. One the most detrimental effects on layer comes from penetrated atmospheric species such as oxygen water. To solve degradation problems, several molecular engineering tactics are introduced: forming a kinetic barrier,...

10.1021/am507354p article EN ACS Applied Materials & Interfaces 2014-12-24

DNA-based small molecules of guanine, cytosine, thymine and adenine are adopted for the charge injection layer between Au electrodes organic semiconductor, heptazole (C26H16N2). The heptazole-channel field effect transistors (OFETs) with a molecule showed higher hole mobility (maximum 0.12 cm2 V−1 s−1) than that pristine device (0.09 s−1). We characterized contact resistance each by transfer length method (TLM) found guanine among all materials performs best as leading to lowest resistance....

10.1088/1361-6463/50/6/065107 article EN Journal of Physics D Applied Physics 2017-01-13

Abstract not Available.

10.1149/ma2013-01/18/807 article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2013-03-08
Coming Soon ...