A5100319909- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Supercapacitor Materials and Fabrication
- Semiconductor materials and devices
- Photonic and Optical Devices
- Silicon Carbide Semiconductor Technologies
- Advanced Sensor and Energy Harvesting Materials
- Conducting polymers and applications
- Optical Network Technologies
- Advanced battery technologies research
- Thin-Film Transistor Technologies
- Advanced Fiber Laser Technologies
- Advanced Photocatalysis Techniques
- Microwave Dielectric Ceramics Synthesis
- Plasma Diagnostics and Applications
- Advanced Memory and Neural Computing
- Advanced Fiber Optic Sensors
- Advancements in Battery Materials
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
- Pigment Synthesis and Properties
- Acoustic Wave Resonator Technologies
- Smart Materials for Construction
- High-Temperature Coating Behaviors
The Ohio State University
1994-2025
Dalian University of Technology
2018-2025
École Polytechnique Fédérale de Lausanne
2023-2024
State Key Laboratory of Heavy Oil
2024
University of Chinese Academy of Sciences
2024
Technical Institute of Physics and Chemistry
2024
Chinese Academy of Sciences
2024
Shanghai Maritime University
2024
Beijing Institute of Technology
2019-2024
Purdue University West Lafayette
2021-2024
Recent advancements in β-Ga2O3 materials’ growth and device developments are briefly reviewed with the focus on low-pressure chemical vapor deposition (LPCVD) of β-Ga2O3. films grown off-axis c-sapphire (010) substrates via high-temperature LPCVD (HT-LPCVD) temperatures ranging between 950 1050 °C. The effects HT-LPCVD conditions material properties comprehensively studied. With relatively higher temperatures, an increased O2 flow rate is required to maintain crystalline quality high...
High power vertical GaN devices are in great demand recently due to their potential on extremely high-power conversion efficiency. Here, we show p–n diodes fabricated bulk substrates with an optimized guard ring structure for electrical field management and high breakdown voltage. By using a low doped (∼1015 cm−3) 28 μm thick drift layer combination ohmic contacts, voltage (VB) of 4.9 kV specific on-resistance (RON) 0.9 mΩ cm2 were achieved. In the on-resistance, device demonstrated Baliga...
A three dimensional porous carbon nanomembrane (CNM), silica-supported CNM (SS-CNM), is developed by formation of a self-assembled monolayer an enediyne compound on the surface mesoporous silica (SBA-15) followed Bergman cyclization and carbonization. The SS-CNM applied as conductive support for electroactive material Co3O4 to fabricate advanced supercapacitors. large fraction clusters (66% total weight) are impregnated in host form regularly packed nanorods with diameters 7 nm. specific...
Abstract The development of iontronic skin (I-skin) capable ultrafast sensing in a wide pressure range, comparable to human skin, is paramount importance for intelligent robotics. However, this remains major challenge due the lack array architectures that can achieve readout and crosstalk-free under large capacitance response generated within range. Here, we report frequency-coding architecture artificial ion mechanoreceptor (AIM-skin) provide universal mode bypass dependence complex...
GaN is rapidly gaining attention for implementation in power electronics but still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel photoluminescence (PL) imaging study TDs regions within vertically structured p-i-n (PIN) diodes consisting metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown on ammonothermal (am-GaN)...
Chemicals in plastics raise significant concerns for potential adverse environmental and health impacts. However, dissipation kinetics fluxes of chemicals from outdoor plastic products remain largely uncharacterized, hindering the accurate assessment their exposure. This study quantified profiles 20 "priority" chemicals, including sunscreens (benzophenone, benzophenone-3, octyl salicylate, etc.), phthalates, benzotriazole ultraviolet stabilizers (UV-P, UV-326, UV-327, polycyclic aromatic...
Unintentional impurity incorporation in GaN drift layers represents a challenging issue that can limit their potential performance vertical power devices. In this paper, we focus on studying the origins of Fe metal-organic chemical vapor deposition (MOCVD) grown materials. Acting as compensator n-type layers, impurities reduce electron mobility and lowest controllable doping level. Two sources, sample cleaning process growth susceptor, were identified main mechanisms MOCVD process. It was...
The overarching goal herein is to identify the factors dominating performance of a‐IGZO‐based memristors. Despite highest on/off ratio, greater than 10 4 with a preferred minimal set/reset bias achieved from memristors, it observed that switching and stability/reliability devices significantly dominated by V O ·· density metallization material, depending on their reactivity IGZO. As first governing factor, ensuring optimal concentration in layer IGZO ( / x ratio 24.3% this study) crucial...
Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues further improving GaN vertical power device performance. This work presents a laser-assisted MOCVD (LA-MOCVD) technique to address high-C issue homoepitaxial under different growth rate (Rg) regimes and studies correlations between [C] Rg. LA-MOCVD is reduced by 50%–90% as compared conventional for wide range 1 16 μm/h. A mass-transport...
Resin matrix composites (RCs) have better thermal and chemical stability, so they are widely used in engineering fields. In this study, the aging process mechanism of two different types resin-based three-dimensional four-way braided (H15 S15) under hygrothermal conditions were studied. The effect behavior on mechanical properties RCs was also Three studied: Case I, 40 °C Soak; II, 70 III, °C-85% relative humidity (RH). It found that hygroscopic moisture-heat conforms to Fick’s second law....
We demonstrate edge termination for vertical GaN p-n diodes using step-etched triple-zone junction extension (JTE). The technique was found to yield high breakdown efficiency without degradation of forward characteristics. electric field distribution at various JTE thicknesses simulated, and the experimental results were well matched simulation results. fabricated diode with shows a voltage 550 V corresponding 75%, turn-on 3.1 V, specific ON-resistance 1.3 <inline-formula...
Effects of surface modification agents on the properties silica (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) /epoxy resin (EP) nanocomposites were studied for significant impacts interface structure between fillers and matrix. The agent KH550, KH560 KH570 grafted to surfaces SiO fillers. original modified characterized by FTIR TG. Nanocomposite samples prepared solution blended process, using 0.3 wt% as filler epoxy polymer...
Ammonia (NH 3 ) is commonly used as group‐V precursor in gallium nitride (GaN) metal–organic chemical vapor deposition (MOCVD). The high background carbon (C) impurity MOCVD GaN related to the low decomposition efficiency of NH , which represents one fundamental challenges hindering development high‐purity thick for vertical high‐power device applications. This work uses a laser‐assisted (LA‐MOCVD) growth technique address high‐C issue GaN. A dioxide (CO 2 laser with wavelength 9.219 μm...