A5053436967- 2D Materials and Applications
- MXene and MAX Phase Materials
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Graphene research and applications
- Advanced Sensor and Energy Harvesting Materials
- Advanced Memory and Neural Computing
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Perovskite Materials and Applications
- Thin-Film Transistor Technologies
- Ferroelectric and Negative Capacitance Devices
- Food composition and properties
- Food Quality and Safety Studies
- Tactile and Sensory Interactions
- Electronic and Structural Properties of Oxides
- Photonic and Optical Devices
- Analytical Chemistry and Sensors
- Transition Metal Oxide Nanomaterials
- Organic Electronics and Photovoltaics
- Nanomaterials and Printing Technologies
- Carbon Nanotubes in Composites
- Neural Networks and Reservoir Computing
- Advanced biosensing and bioanalysis techniques
- Phytoestrogen effects and research
Inha University
2018-2024
Seoul National University
2024
European Spallation Source
2021
Massachusetts Institute of Technology
2017-2020
Korea Institute of Science and Technology
2014-2018
Gachon University
2014-2016
UNSW Sydney
2015
Convergence
2015
Yonsei University
2009-2014
Korean Association Of Science and Technology Studies
2014
We investigated the reduction of current fluctuations in few-layer black phosphorus (BP) field-effect transistors resulting from Al2O3 passivation. In order to verify effect passivation on device characteristics, measurements and analyses were conducted thermally annealed devices before after More specifically, static low-frequency noise used monitoring charge transport characteristics devices. The carrier number fluctuation (CNF) model, which is related trapping/detrapping process near...
Top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] are demonstrated. The nonvolatile transistor a single-layer channel exhibits excellent retention properties for more than 1000 s, maintaining ~5 × 103 the program/erase ratio and displaying high mobility of ~220 cm2/(V·s). Detailed facts importance specialist readers published as "Supporting Information". Such documents peer-reviewed, but...
Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D graphene in the following two aspects: single element (P) for its composition quite high mobilities depending on fabrication conditions. Apart several electronic applications reported BP nanosheet, here we report first time nanosheet-ZnO nanowire 2D-1D heterojunction p-n diodes BP-gated junction field effect...
Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal semiconductor hybrid phototransistors with photodetection capability between 700 and 1400...
Two-dimensional van der Waals (2D vdWs) materials are a class of new that can provide important resources for future electronics and sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential use in electronic optoelectronic applications because its allotropic properties, high mobility, direct narrow band gap. Here, we demonstrate few-layered BP-based nonvolatile memory transistor with...
Recently, α‐MoTe 2 , a 2D transition‐metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the more favorable candidate than conventional 3D Si on scale of few nanometers. The bandgap thin appears close to that and is quite smaller those other typical semiconductors. Even though there have been attempts control charge‐carrier polarity MoTe functional devices such as p–n junction or...
Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most studies have shown that the material an excellent optical nonlinearity useful many areas, one which is saturable absorption for passive mode‐locking. A direct interaction scheme mode‐locking, however, potential to optically cause permanent damage already delicate material. Evanescent field been proven be method prevent such danger other 2‐dimensional nanomaterials. In this report, we...
Abstract 2D layered van der Waals (vdW) atomic crystals are an emerging class of new materials that receiving increasing attention owing to their unique properties. In particular, the dangling‐bond‐free surface enables integration differently dimensioned into mixed‐dimensional vdW heterostructures. Such heterostructures herald opportunities for conducting fundamental nanoscience studies and developing nanoscale electronic/optoelectronic applications. This study presents a 1D ZnO nanowire...
Two MoS2 field-effect transistors are compared using graphene and Au/Ti source-drain contacts in respects of their Ohmic OFF behavior on an identical nanosheet. As a result, graphene-contact appears not only to show superior ohmic those but also more enhanced state behavior. Such results attributed the electric-field-induced work function tuning exfoliated graphene.
The violation of Baryon Number, $\mathcal{B}$, is an essential ingredient for the preferential creation matter over antimatter needed to account observed baryon asymmetry in universe. However, such a process has yet be experimentally observed. HIBEAM/NNBAR %experiment program proposed two-stage experiment at European Spallation Source (ESS) search number violation. will include high-sensitivity searches processes that violate by one or two units: free neutron-antineutron oscillation...
We have fabricated dual gate field effect transistors (FETs) with 12 nm-thin black phosphorus (BP) channel on glass substrate, where our BP FETs a patterned-gate architecture 30 nm-thick Al2O3 dielectrics top and bottom of channel. Top dielectric has simultaneously been used as device encapsulation layer, controlling the threshold voltage well when mainly operate under bias. Bottom, top, gate-controlling mobilities were estimated to be 277, 92, 213 cm2/V s, respectively. Maximum ON-current...
Superior electrostatic and dynamic performances were acquired from the diode on glass when a dipole-containing fluoropolymer was employed for encapsulation.
As one of the emerging new transition‐metal dichalcogenides materials, molybdenum ditelluride (α‐MoTe 2 ) is attracting much attention due to its optical and electrical properties. This study fabricates all‐2D MoTe ‐based field effect transistors (FETs) on glass, using thin hexagonal boron nitride graphene in consideration good dielectric/channel interface source/drain contacts, respectively. Distinguished from previous works, this study, all 2D FETs with α‐MoTe nanoflakes are dual‐gated for...
High-performance and low operating voltage are becoming increasingly significant device parameters to meet the needs of future integrated circuit (IC) processors ensure their energy-efficient use in upcoming mobile devices. In this study, we suggest a hybrid dual-gate switching consisting vertically stacked junction metal–insulator–semiconductor (MIS) gate structure, named J-MISFET. It shows excellent performances (<0.5 V), drain current ON/OFF ratio (∼4.7 × 105), negligible hysteresis...
2D van der Waals atomic crystal materials have great potential for use in future nanoscale electronic and optoelectronic applications owing to their unique properties such as a tunable energy band gap according thickness or number of layers. Recently, black phosphorous (BP) has attracted significant interest because it is single‐component material like graphene high mobility, direct gap, exhibits ambipolar transition behavior. This study reports on charge injection memory field‐effect...
Nanosheet transistors based on mechanically exfoliated MoS2 and other transition metal dichalcogenide layers have already been reported demonstrating good device performances. In an approach to synthesize a large area two-dimensional (2D) sheet, chemical vapor deposition methods were the transfer of those sheets onto arbitrary substrates was also attempted, although studies direct imprinting such 2D semiconductor are rare. Here, we report method, polydimethylsiloxane (PDMS)-adopting...
Two-dimensional (2D) MoS2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report high-performance phototransistor exhibits photoresponse in the 400–700 nm range with maximum responsivity of over 1 × 104 A/W. As more sophisticated application than simple unit device, it implemented photoinverter (NOT logic gate) connected to an external resistor, which clearly...
A novel facile strategy was developed to tune transition-metal oxide electronic states for transistor’s transport enhancement.
There is a growing demand for human-eye-invisible short-wave infrared (SWIR) detection due to its potential in applications areas such as medical diagnostics, environmental monitoring, and night vision. PbS colloidal quantum dots (QDs) are promising light absorber SWIR detection. Herein, we report on QD/InGaZnO (IGZO) heterostructure-based phototransistor flat-panel imager human-eye-safe photodetection high-resolution imaging. Such hybrid phototransistors show good electrical performance...
We report on a novel method for the fabrication of highly sensitive hydrogen gas sensors based palladium oxide thin films and have investigated their sensing properties nanostructures. To our knowledge, this is first use reduced as sensors. The were deposited thermally oxidized Si substrates using reactive direct current (DC) magnetron sputtering system. Considerable changes in resistance observed when they initially exposed to gas, result reduction process. After initial exposure PdO30%,...
A non‐classical organic strain gauge as a voltage signal sensor is reported, using an inverter‐type thin‐film transistor (TFT) circuit, which able to sensitively measure large quantity of elastic (up ≈2.48%), approaches almost folding state. Novel heptazole‐based TFTs are chosen be incorporated in this circuit; solid heptazole has small domain size general. While crystal domain‐pentacene seldom show sufficient current variation upon mechanical bending for tensile strain, these demonstrate...
A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The exhibits large window and dynamic program/erase behavior. One part of nanowire forms channel top-gate field-effect transistor with polymer while rest used as resistors.
Silver (Ag) grid transparent electrode is one of the most promising conducting electrodes (TCEs) to replace conventional indium tin oxide (ITO). We systematically investigate an effect geometric lattice modifications on optical and electrical properties Ag electrode. The reference with 5 μm width 100 pitch (duty 0.05) prepared by photo-lithography lift-off processes shows sheet resistance 13.27 Ω/sq, transmittance 81.1%, resultant figure merit (FOM) 129.05. Three different modified stripe...