Abstract A β-Ga2O3 trench Schottky barrier diode (T-SBD) with double-field-plates terminal and cost effective Al2O3/SiN dielectric layer is fabricated. Owing to the shielding effect of MIS (Metal-Insulator-Semiconductor) structure, compared Conventional SBD (C-SBD), breakdown voltage (BV) T-SBD improved from 700 V (C-SBD) 1380 (TSBD) specific on-resistance (Ron,sp) being 6.06 mΩ·cm2. Compared C-SBD, Baliga’s Figure Merit for 131 MW/cm2 314 (T-SBD). Moreover, leakage current significantly...

In this article, a novel reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with embedded diode and p-type Schottky Barrier Diode (p-SBD) is proposed. The two diodes are connected in series through floating electrode, which provides current path for carriers mode. Compared the Separated Shorted-Anode RCLIGBT (SSA-RC-LIGBT), proposed structure not only eliminates snapback voltage (ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

This paper demonstrates a polycrystalline silicon avalanche mode light-emitting device. The unique N+PN+PN+ cascade structure is designed to enhance light intensity via carrier injection engineering, in which the minority carriers are injected from forward-biased junction emission junction. Visible can be observed at reverse-biased PN junctions when device operating voltage exceeds 20 V. In particular, phonon-assisted indirect interband recombination of with excess energy may main mechanism...

Abstract A novel structure of p -GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One the passivation (CP) layer consisting Si 3 N 4 high-permittivity (HK) film. The other a barrier (CB) Al x Ga 1− N/AlN/Al 0.23 0.77 N. Due to coordinated effect CP CB, specific on-resistance ( R ON, SP ) can be reduced under premise ensuring breakdown voltage (BV). Meanwhile, since HK film in introduces mechanism automatically compensate hot electrons...

An oppositely doped islands insulated gate bipolar transistor (ODI-IGBT) is investigated for the first time. By adding one or several ODIs in drift longitudinally equidistantly, ODI-IGBT obtains a better electric field distribution than field-stop IGBT (FS-IGBT) at OFF-state, which means larger breakdown voltage. Moreover, inductive load turn off transient, its space charge region wider along with distribution. Hence, less excess carriers are left when anode voltage rises to bus That is,...

A design concept of variation vertical doping is proposed to upgrade the deep-trench lateral double-diffused metal–oxide–semiconductor field-effect transistor. Due proposal, a drift region in form charge-balance super-junction first gained such device. Hence, relationship between breakdown voltage and specific on-resistance significantly improved. Numerical simulations demonstrate that proposal valid increase theoretical limit figure merit be about 44.9 MW/cm <inline-formula...

An idea of applying a film high-k (HK) material to the trench lateral double-diffused MOSFET (LDMOS) is proposed and studied by simulation. Through introducing an HK around SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> trench, flow electric flux guided, distribution surface field modulated. As result, tradeoff relationship between breakdown voltage (BV) specific <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...

A new lateral power metal-oxide-semiconductor field-effect transistor (MOSFET) with dual conduction paths and high-k passivation is proposed. The enables the to realize double reduced surface field (RESURF) action facilitates formation of an accumulation layer during forward conduction. proposed device offers a 42% reduction in specific on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,SP</sub> ) when compared similar size...

A new type of "quasi-p-lateral diffused metal oxide semiconductor" (quasi-p-LDMOS), in which electrons are used as conductive carriers the drift region is proposed. floating electrode F "quasi-p-LDMOS" to transform hole current into electron current. Then, by using an integrated low-voltage power and inverter control automatically, specific on-resistance (R on,sp) significantly reduced device can be successfully turned on off. Simulation results show that Ron,sp 12.77 31 mΩ·cm <sup...

The optimization of drift region specific ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{on,sp}$ </tex-math></inline-formula> ) for superjunction (SJ) MOSFETs with three-dimensional (3-D) and insulator-pillar notation="LaTeX">${i}$ -pillar) concepts is proposed compared the two-dimensional conventional SJ (2-D C-SJ) MOSFETs. With constraints avalanche breakdown critical depletion,...

In this article, we proposed and fabricated a prototype of single-channel SiC trench MOSFET with integrated junction barrier Schottky (TJBS) on the side for 1200-V application, named TJBS-MOS. The TJBS is protected by grounded <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> shielding layers under gate bottom. measured specific ON-resistance (...

An improved p-channel lateral double-diffused MOSFET (pLDMOS) with silicon-on-insulator substrate is proposed. On one hand, the improvement attributed to a dielectric film high permittivity (high-k), which employed at silicon surface optimize electric field distribution. Thus, drift region dose could be increased, while its deviation has less influence on breakdown voltage (BV). other an additional pLDMOS introduced form another hole current path, contributes decreased specific ON-resistance...

A new planar junction edge termination technique, using the optimum variation lateral doping with a buried layer, is proposed and studied. voltage equal to 100% of breakdown single-sided abrupt parallel-plane same substrate can be achieved within smallest area on surface. The technique realized by process compatible conventional CMOS or BiCMOS technologies verified results numerical simulations.

A trench insulated gate bipolar transistor (TIGBT) with floating n-well (FN) region is proposed. In the off-state, region, which pinched off by its adjacent trenches, would almost have no effect on breakdown voltage. turn-on transient, only a few holes could be attracted into FN because it has high barrier to holes. So increase of potential prevented, suppresses reverse displacement current that charges capacitance significantly. As result, proposed TIGBT shows excellent controllability dV...

A novel trench insulated bipolar transistor (TIGBT) is proposed, where a p-layer beneath the gate introduced to form self-biased pMOS and provide an additional path for hole current. In on-state, drain-to-source voltage of nMOS clamped, which helps decrease saturation blocking state, reverse sustained by junction p-layer/n-drift, so that n-layer sandwiched p-base region n-drift can be as heavily doped possible reduce on-state without affecting breakdown capability. The simulation results...

In the prior art of optimum variation lateral doping (OPTVLD) technique, dose deviations between designs and products should be tightly controlled to achieve eligible breakdown voltages (BVs); however, an approach presented in this letter overcomes shortcoming without any penalty. Its physical explanation is discussed, simulations show that, through using approach, allowed dose-deviation range relaxed from about ±1.5% ±5%, which can significantly enhance yield over existing state art. As a...

This article proposes a MATLAB-based optimization methodology of the drift region specific ON-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,sp</sub> ) both for high-permittivity (Hk) MOSFETs and superjunction (SJ) with design parameters expressed by breakdown voltage (BV) aspect ratio (AR). The optimized method has three distinctive features. First, based on built-in functions in MATLAB, proposed is very efficient to...

A single-channel SiC trench MOSFET (SC-TMOS) with integrated MOS barrier Schottky diode (TMBS) is proposed and investigated in this paper. The electric field at the interface reduced to 0.37 MV cm−1 by P+ shield under gate, which completely suppresses leakage current through TMBS. on-state voltage drop (VR_ON) of SC-TMOS reverse conduction state 1.59 V (@JSD = 400 cm−2) compared 2.93 PN body a conventional (C-TMOS) 1.61 three-level protection (TP-TMOS). Meanwhile, higher BFOM (Baliga's...

A novel insulated gate bipolar transistor modulated by a high-k dielectric (HK-IGBT) is presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer quick complete depletion to drift region during turn-off transient. This merit greatly reduces current varying time of an HK-IGBT. Moreover, obtain better electric field distribution, which enables carrier stored layer (CSL) have higher doping dose when compared typical trench (CSTBT). These advantages improve relationship...

A unified model is proposed to characterize the breakdown voltage (BV) and specific on-resistance (Ron,sp) for vertical doped superjunction (d-SJ) polarized (p-SJ) GaN power devices. This study based on recently published compensated-pillar (cp-SJ) structure. two-dimensional electric field analytically formulated using Green's function method. Numerical calculations TCAD simulations demonstrate that, a given pillar depth, p-SJ device has lower BV than d-SJ with wide width. However, when...

A novel p-type DP-OPTVLD (Double-Paths & OPTimum-Variational-Lateral-Doping) LDMOS is proposed. It features the double hole-conductive paths formed by a top and buried p-layer in drift region using OPTVLD technique, which significantly contribute to reducing device specific on-resistance. The design principle electrical characteristics of proposed structure are investigated theoretically experimentally. Simulation results show that on-resistances 155/689 mΩ·cm <sup...

An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts resistive field plate (RFP) to help QVSJ satisfy charge-balance. The realization of RFP barely complicates the device fabrication, but it motivates significantly improve relationship between breakdown voltage (BV) specific on-state resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,SP</sub>...

In this paper, the analytical models of breakdown voltage design parameters and minimum specific on-resistance in vertical gallium nitride unipolar devices are proposed. Considering discrepancy impact ionization coefficients (IIC) reported previous literatures from Monte Carlo simulations experiments, avalanche both punch-through non-punch-through conditions presented, i.e., relationship between voltage, drift doping concentration, thickness critical electric field, which shows high accuracy...