A5008498806- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- HVDC Systems and Fault Protection
- Thin-Film Transistor Technologies
- Ga2O3 and related materials
- Electrostatic Discharge in Electronics
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Multilevel Inverters and Converters
- Electromagnetic Compatibility and Noise Suppression
- Lightning and Electromagnetic Phenomena
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Nerve injury and regeneration
- Neuroscience and Neural Engineering
- Particle accelerators and beam dynamics
- Advanced DC-DC Converters
- Concrete Properties and Behavior
- Cellular Mechanics and Interactions
- Ginseng Biological Effects and Applications
- Advanced Photocatalysis Techniques
- Traditional Chinese Medicine Analysis
- Chromatography in Natural Products
University of Electronic Science and Technology of China
2014-2025
National Engineering Research Center of Electromagnetic Radiation Control Materials
2012-2024
State Key Laboratory of Electronic Thin Films and Integrated Devices
2012-2024
Jinan University
2022
Hohai University
2022
ORCID
2019
Université Oran 1 Ahmed Ben Bella
2017
In contrast to the rapid advancements in mesoscale connectomic mapping of mammalian brain, similar peripheral nervous system has remained challenging due body's size and complexity. Here, we present a high-speed blockface volumetric imaging with an optimized workflow whole-body clearing, capable entire adult mouse at micrometer resolution within 40 hours. Three-dimensional reconstruction individual spinal fibers Thy1-EGFP mice reveals distinct morphological features sensory motor projections...
Abstract A β-Ga2O3 trench Schottky barrier diode (T-SBD) with double-field-plates terminal and cost effective Al2O3/SiN dielectric layer is fabricated. Owing to the shielding effect of MIS (Metal-Insulator-Semiconductor) structure, compared Conventional SBD (C-SBD), breakdown voltage (BV) T-SBD improved from 700 V (C-SBD) 1380 (TSBD) specific on-resistance (Ron,sp) being 6.06 mΩ·cm2. Compared C-SBD, Baliga’s Figure Merit for 131 MW/cm2 314 (T-SBD). Moreover, leakage current significantly...
A breakdown voltage model based on the 2-D analytical of electric field distributions for balanced and symmetric superjunction (SJ) MOSFET is presented used to explain different mechanisms as a function column doping concentrations widths. It observed that breakdowns simultaneously occur along lines across some special points when drift region not fully depleted. Moreover, minimum specific on-resistance can be obtained ionization integrals these are both in unity. For larger than 600 V, <i...
In this brief, a novel superjunction (SJ)-insulated-gate bipolar transistor (SJ-IGBT) is proposed and investigated by simulation, where floating N-base region on the P-pillar introduced to form self-biased PMOS. on-state, PMOS can increase hole quasi-Fermi potential of region, enhancing carrier-storage effect in N-pillar regions reducing on-state voltage consequently. turn-off transient, because be automatically turned as consequence rise with accumulation, SJ-IGBT rapidly off. The results...
Limestone powder (LS) is a new environmentally-friendly concrete admixture, and its application in engineering worth exploring. The curing of LS hydraulic under extreme temperatures will significantly affect the interior microstructure concrete, which has significant impact on resistance to freeze-thaw cycles. This study aims investigate influence replacement quantity (10 %, 30 % 50 %) (5 ℃, 20 ℃ ℃) concrete. was reflected by mass loss rate, relative dynamic modulus elasticity (RDM)...
An analysis of an improved superjunction structure with variation vertical doping profile (VVD-SJ) is presented in this brief. It features a better tradeoff between breakdown voltage (BV) and specific ON-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ) than the prior art, due to higher average concentration columns. A simple 2-D electric field model VVD-SJ derived based on charge superposition principle. Optimized results...
A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed investigated by numerical simulations. An n-MOSFET (M <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N2</sub> ) embedded in the anode side of LIGBT to short P-anode/N-buffer junction during transient, thus allowing be turned off rapidly without excessive tail current. In addition, M enable conduct reverse conducting current like freewheeling diode....
Abstract A novel structure of p -GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One the passivation (CP) layer consisting Si 3 N 4 high-permittivity (HK) film. The other a barrier (CB) Al x Ga 1− N/AlN/Al 0.23 0.77 N. Due to coordinated effect CP CB, specific on-resistance ( R ON, SP ) can be reduced under premise ensuring breakdown voltage (BV). Meanwhile, since HK film in introduces mechanism automatically compensate hot electrons...
An oppositely doped islands insulated gate bipolar transistor (ODI-IGBT) is investigated for the first time. By adding one or several ODIs in drift longitudinally equidistantly, ODI-IGBT obtains a better electric field distribution than field-stop IGBT (FS-IGBT) at OFF-state, which means larger breakdown voltage. Moreover, inductive load turn off transient, its space charge region wider along with distribution. Hence, less excess carriers are left when anode voltage rises to bus That is,...
An idea of applying a film high-k (HK) material to the trench lateral double-diffused MOSFET (LDMOS) is proposed and studied by simulation. Through introducing an HK around SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> trench, flow electric flux guided, distribution surface field modulated. As result, tradeoff relationship between breakdown voltage (BV) specific <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
This brief focuses on the silicon-on-insulator (SOI) split gate (SG) superjunction (SJ) lateral double-diffused MOSFET (LDMOS), in which p-column is not only utilized to compensate fields produced by opposite charges drift region, but also further acting as an SG. The accumulation layers of electron are formed region during on-state, providing lower resistance paths for electric current, leads a decrease specific on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Analytical models of the 2-D electric field distributions interdigitated balanced symmetric semisuperjunction (SemiSJ) structure, based on charge superposition method, are derived. An accurate approximation exact analytical solution vertical is also proposed and demonstrated by device simulation. The optimization method its numerical calculation results specific on-resistance SemiSJ trench MOSFETs with constant aspect ratio (AR) presented verified simulations. show that optimized can be...
A new lateral power metal-oxide-semiconductor field-effect transistor (MOSFET) with dual conduction paths and high-k passivation is proposed. The enables the to realize double reduced surface field (RESURF) action facilitates formation of an accumulation layer during forward conduction. proposed device offers a 42% reduction in specific on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,SP</sub> ) when compared similar size...
The optimization of drift region specific ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{on,sp}$ </tex-math></inline-formula> ) for superjunction (SJ) MOSFETs with three-dimensional (3-D) and insulator-pillar notation="LaTeX">${i}$ -pillar) concepts is proposed compared the two-dimensional conventional SJ (2-D C-SJ) MOSFETs. With constraints avalanche breakdown critical depletion,...
In this article, we proposed and fabricated a prototype of single-channel SiC trench MOSFET with integrated junction barrier Schottky (TJBS) on the side for 1200-V application, named TJBS-MOS. The TJBS is protected by grounded <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> shielding layers under gate bottom. measured specific ON-resistance (...
A novel double-reduced surface field (RESURF) silicon-on-insulator(SOI) lateral trench insulatedgate bipolar transistor (LTIGBT) with self-biased nMOS is proposed and investigated by simulation. During the turn-on transient, turned-off, p-top region floating, therefore conductivity modulation in drift on emitter side can be enhanced to achieve a low on-state voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CE(sat)</sub> ). turn-off...
In this brief, a novel floating dummy insulated gate bipolar transistor (FD-IGBT) is proposed and investigated by simulation. A n region p+ shorted with an emitter in the p-base are introduced to form open-base transistor, voltage of can be clamped transistor. turn-ON transient, pile-up holes increases its quasi-Fermi potential leads punch-through at low voltage, which turn clamps region, decreasing Miller capacitance thereby reverse charging current from gate. As result, FD-IGBT...
A new solution based on the concept of a variation lateral doping (VLD) compensated layer and lightly doped region (LDR) is proposed for superjunction double diffused MOSFET (SJ-LDMOS). When drift fully depleted, charge compensation occurs as follows: N-pillar depletion charges compensate with P-pillar in most region, introduced by VLD LDR opposite increasing substrate to overcome assisted (SAD) effect. Besides, applied under drain electrode can also reduce curvature effect shallowly...
This article proposes a MATLAB-based optimization methodology of the drift region specific ON-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,sp</sub> ) both for high-permittivity (Hk) MOSFETs and superjunction (SJ) with design parameters expressed by breakdown voltage (BV) aspect ratio (AR). The optimized method has three distinctive features. First, based on built-in functions in MATLAB, proposed is very efficient to...
A single-channel SiC trench MOSFET (SC-TMOS) with integrated MOS barrier Schottky diode (TMBS) is proposed and investigated in this paper. The electric field at the interface reduced to 0.37 MV cm−1 by P+ shield under gate, which completely suppresses leakage current through TMBS. on-state voltage drop (VR_ON) of SC-TMOS reverse conduction state 1.59 V (@JSD = 400 cm−2) compared 2.93 PN body a conventional (C-TMOS) 1.61 three-level protection (TP-TMOS). Meanwhile, higher BFOM (Baliga's...
A unified model is proposed to characterize the breakdown voltage (BV) and specific on-resistance (Ron,sp) for vertical doped superjunction (d-SJ) polarized (p-SJ) GaN power devices. This study based on recently published compensated-pillar (cp-SJ) structure. two-dimensional electric field analytically formulated using Green's function method. Numerical calculations TCAD simulations demonstrate that, a given pillar depth, p-SJ device has lower BV than d-SJ with wide width. However, when...
An improved trench lateral double-diffused MOSFET (T-LDMOS) is proposed. It has a quasi vertical super junction (QVSJ) drift region and adopts resistive field plate (RFP) to help QVSJ satisfy charge-balance. The realization of RFP barely complicates the device fabrication, but it motivates significantly improve relationship between breakdown voltage (BV) specific on-state resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,SP</sub>...