A direct-current current-voltage (DCIV) measurement technique of interface and oxide traps on oxidized silicon is demonstrated. It uses the gate-controlled parasitic bipolar junction transistor a metal-oxide-silicon field-effect in p/n isolation well to monitor change trap density. The dc base collector currents are monitors, hence, this more sensitive reliable than traditional ac methods for determination fundamental kinetic rates degradation mechanisms, such as charge pumping.< <ETX...

This paper presents the results of an experimental study designed to explore both qualitatively and quantitatively mechanism improved current gain in bipolar transistors with polysilicon emitter contacts. Polysilicon contacts were deposited heat treated at different conditions. The electrical properties Were measured using p-n junction test structures that are much more sensitive contact than transistors. A simple phenomenological model was used correlate, structural measurements. Possible...

For quasi-neutral regions of semiconductor devices with position-dependent composition, we have derived expressions for the position dependence excess minority-carrier density and relevant recombination currents. To make development concrete, study nonuniformly heavily doped emitter silicon p-n junction devices. The developed differ from those previously advanced in that they are form a multiple integral series, yielding, by truncation, many different orders approximation. Correspondences...

An experimentally based methodology is described that determines the effective gap shrinkage and lifetime in emitter of a p-n junction solar cell. It provides first experimental means available for assessing importance relative to large recombination rates highly doped emitter. As an additional result procedures employed, base also determined. The pertains cell after formed. Hence each material parameter determined includes effects processing used fabrication. consists strategy designing...

A method is described that provides an experimental means for the first time to separate and determine emitter base lifetimes in a p-n diode after junction has been fabricated. In method, several static transient measurements are analyzed using physical models of characteristics. To illustrate diffused silicon diodes fabricated having substrate (base) impurity concentrations ranging from 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

We report the first use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace conventional high-low junction or back-surface-field (BSF) structure, silicon solar cells. Compared with BSF and back-ohmic-contact (BOC) control slimples, polysilicon-back cells, show improvements in red spectral response (RSR) open-circuit voltage. Measurement reveals that decrease effective surface recombination velocity S is responsible for this improvement. Decreased results n-type (Si:As)...

A general experimental method for the determination of phenomenological energy gap narrowing <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\DeltaE_{G}</tex> in regions semiconductor devices that have high concentrations donor or acceptor impurity atoms is presented. The theoretical grounds are discussed detail, including strong influence Fermi-Dirac statistics on minority-carrier recombination heavily doped regions. requires measurements only...

A new method is described and illustrated for determining the value temperature dependence of minority-carrier diffusion length lifetime in base region p-n junction solar cells diodes. The applies to devices after formed, thus includes influence fabrication on lifetime. requires only forward-biased capacitance measurements at device terminals. It combines dependencies low-frequency high-frequency forward bias such a way as yield component associated with minority carriers quasi-neutral...

Experimental evidences are given which demonstrate that degradation of the common-emitter forward current gain h/sub FE/ submicron silicon npn bipolar transistors at low reverse emitter-base junction applied voltage is caused by primary hot holes n/sup +//p emitter tunneling rather than secondary electrons generated or thermally-generated electrons. Experiments also showed similar kinetic energy dependence generation rate oxide/silicon interface traps and holes. Significant was observed...

The physical degradation mechanisms of silicon bipolar function transistors at high forward current densities were delineated quantitatively using three n/p/p and one p/n/p state-of-the-art submicron polysilicon-emitter transistor technologies. increase the operating gain decrease emitter series resistance from million-ampere per square centimeter stress are related to hydrogenation electronic traps metal-silicide/polycrystalline-Si polycrystalline-Si/crystalline-Si contact interfaces. A...

New DC methods to measure the collector resistance R/sub C/ and emitter E/ are presented. These based on monitoring substrate current of parasitic vertical p-n-p transistor linked with n-p-n intrinsic transistor. The is operated either bottom substrate-collector or top base-collector p-n junction forward-biased. This allows for a separation various components C/. obtained from measured lateral portion collector-emitter saturation voltage. Examples measurements advanced self-aligned...

Two main results are presented. The first deals with a simple method that determines the minority-carrier lifetime and effective surface recombination velocity of quasi-neutral base silicon solar cells. requires observation only single transient, is amenable to automation for in-process monitoring in manufacturing. Distinct from many other methods use, this method, which called short-circuit current decay, avoids distortion observed transient consequent inaccuracies arise presence mobile...

Extraction of the intrinsic NBTI degradation rate in high-k pMOSFETs was found to require correction measured threshold voltage shift (DeltaV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> ) for fast transient charging contribution caused by charge trapping pre-existing defects films. The proposed analysis methodology leads a significantly lower estimated lifetime than that obtained generally used approach. It determined interface...

Minority-carrier diffusion length L, lifetime tau , and coefficient D in n-type Si are measured at 296 K the doping range from 10/sup 18/ cm/sup -3/ to 7*10/sup 19/ -3/. The measurement is based on a lateral collection of carriers generated by spatially uniform light. distance between illumination edge junction defined photolithography. This allows simultaneous independent determination all transport parameters same material. A self-consistency accuracy check provided relation L/sup 2/=D ....

A new method for accurate measurement of minority-carrier diffusion coefficients in silicon is described. The based on a direct the transit time through narrow region p-n junction diode. mobility obtained from coefficient using Einstein relation. demonstrated low-doped n- and -p-type Si (dopings ∼10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) compared with literature data...

The current components associated with the grain boundaries of diffused p/n junction polysilicon solar cells made on n- and p-type Wacker substrates are analyzed experimentally identified. New electrical methods for determining presence or absence preferential diffusion along average doping density preferentially regions described. For substrates, these revealed phosphorus boundaries; no boron was observed. recombination were in which occurred. analysis shows that dominant component at small...

Direct measurements of the minority-hole transport parameters in degenerate n-type silicon were done by analyzing transient photocurrent frequency domain. Minority-hole mobility is found to increase with doping for dopings larger than 4*10/sup 19/ cm/sup -3/. The ratio majority-hole be about 2.8 at N/sub D/=7.2*10/sup measured lifetime shows a strongly Auger-dependent mechanism. extracted Auger coefficient 296 K C/sub n/=2.22*10/sup -31/ 6/-s/sup -1/, and agreement that reported on other...

Temperature dependence of the minority hole mobility μp(ND,T) in heavily doped n+ silicon doping range from 1018 to 2.4×1019 cm−3 was investigated. The preliminary measurements show that is strongly temperature dependent. For temperatures below 200 K minority-carrier increases with increasing doping, contrast opposite for majority p+ silicon. Analytical fits measured data useful low-temperature modeling bipolar devices are given.

New methods are presented and illustrated that enable the accurate determination of diffusion length minority carriers in narrow regions a solar cell or diode. Other now available inaccurate for desired case which width region is less than length. Once determined by new methods, this result can be combined with measured dark I-V characteristics small-signal admittance to recombination currents each quasi-neutral cell-for example, emitter, low-doped base, high-doped base BSF...

A relative contribution of the interface and bulk dielectric defects to negative bias temperature instability (NBTI) in metal/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /SiO gate stacks was investigated. Interface trap generation assessed by direct-current current-voltage (DCIV) technique, which independently measures defect density from oxide charges delineates overall NBTI measured threshold voltage shift (DeltaV...

Deviations from Ohm’s law for electron conductivity in silicon surface inversion layers were observed 4.2 to 20 K using MOS transistors with different amounts of oxide charges. The measurements compared a two−dimensional theory hot electrons layers. It was found that above 6 this can well account the non−Ohmic behavior. From comparison experimental results deformation potential constant ZA scattering by acoustic phonons is be ZA=7.8±2.3 eV. hot−electron apparent disagreement at temperatures...

Abstract A model for band‐gap shrinkage in semiconductors is developed and applied to silicon. survey of earlier experiments, new ones obtained by the authors, gives agreement between experiments on n‐ p‐type silicon which good as far transport measurements ≈︁ 300 K range various authors are concerned. In fact, discrepancies theory experiment no worse than experimental results authors. It also a account recent optical determinations at 5 K. The based Debye screening and, apart from effective...

Experimental evidence for low minority-carrier diffusivity and mobility in highly doped Si:As is presented explained by a simple model. The model emphasizes the carrier transport, including trapping, tail states of band that will influence while not influencing majority-carrier transport. measured values minority holes n+-Si:As layers with doping concentrations about 1.5×1020 cm−3 are Dp≂0.2 cm2/s μp≂6.3 cm2/Vs, which one order magnitude smaller than corresponding majority holes. These new...