A5000285783- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Metal-Organic Frameworks: Synthesis and Applications
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Photocatalysis Techniques
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Magnetism in coordination complexes
- Advancements in Battery Materials
- Electromagnetic Compatibility and Noise Suppression
- Organic and Molecular Conductors Research
- Crystallography and molecular interactions
- Copper-based nanomaterials and applications
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- Radiation Effects in Electronics
- Thin-Film Transistor Technologies
- ZnO doping and properties
- Gold and Silver Nanoparticles Synthesis and Applications
- Covalent Organic Framework Applications
Sichuan University
2016-2025
Nanjing University
2020-2024
Collaborative Innovation Center of Advanced Microstructures
2020-2024
Fourth Hospital of Hebei Medical University
2023-2024
Hebei Medical University
2023-2024
China Academy of Space Technology
2022
West China Medical Center of Sichuan University
2019-2020
Xi'an Peihua University
2018
Xinxiang Medical University
2016
Abstract A series of stable radical 2D metal‐organic frameworks has been assembled. ( m ‐TTFTB) 3 ‐Tetrathiafulvalene‐tetrabenzoate) trimer building blocks are beneficial for the stability radicals due to delocalization unpaired electron. Hexanuclear rare‐earth‐cluster‐based 1D chains further enhance frameworks. The state middle TTF in observed by change central C−C and C−S bond distances configuration single‐crystal X‐ray diffraction. characteristics also confirmed electron paramagnetic...
Abstract Comprised of a battery anode and supercapacitor cathode, hybrid lithium‐ion capacitors (HLICs) are found to be an effective solution realize both high power density energy at the same time. Organic–inorganic materials with well‐organized framework guided by reticular chemistry one promising for HLICs because rich active sites ordered porosity. Herein, metal−organic consisting Zr 4+ metal ions tetrathiafulvalene‐based ligands (Zr‐MOF) is proposed as pseudocapacitive HLICs. The Zr‐MOF...
Near-infrared (NIR) photothermal materials hold great promise for use in several applications, particularly therapy, diagnosis, and imaging. However, current NIR responsive often show narrow absorption bands low efficiency, have long response times. Herein, we demonstrate that the of tetrathiafulvalene-based metal-organic frameworks (MOFs) can be tuned by redox doping using plasmonic nanoparticles. In this work, a MOF containing redox-active tetrathiafulvalene (TTF) units Dy-carboxylate...
Metal-organic frameworks (MOFs), with diverse metal nodes and designable organic linkers, offer unique opportunities for the rational engineering of semiconducting properties. In this work, we report a mixed-linker conductive MOF system both tetrathiafulvalene Ni-bis(dithiolene) moieties, which allows fine-tuning electronic structures semiconductive characteristics. By continuously increasing molar ratio between Ni-bis(dithiolene), switching behaviors from n-type to p-type was observed along...
A carrier-storage-enhanced superjunction (SJ) insulated gate bipolar transistor (CSE-SJ-IGBT) is proposed and investigated. In the CSE-SJ-IGBT, p-pillar connected to Emitter via one diode or two series diodes, which helps raise hole quasi-Fermi potential of at on-state so as enhance carrier-storage effect in drift region (n-pillar p-pillar) reduce voltage (VCE( <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> )). Moreover, CSE-SJ-IGBT...
Modulation of the ligands and coordination environment metal-organic frameworks (MOFs) has been an effective relatively unexplored avenue for improving anode performance lithium-ion batteries (LIBs). In this study, three MOFs are synthesized, namely, M4 (o-TTFOB)(bpm)2 (H2 O)2 (where M is Mn, Zn, Cd; o-H8 TTFOB ortho-tetrathiafulvalene octabenzoate; bpm 2,2'-bipyrimidine), based on a new ligand with two adjacent carboxylates one phenyl, which allows us to establish impact metal these as...
The MOF-to-HOF transformation was realized in a single-crystal-to-single-crystal manner by the oxidation and hydration of Cu I center -TTFTB. corbelled S⋯S π⋯π interactions ensured framework stability during transformation.
Abstract A series of stable radical 2D metal‐organic frameworks has been assembled. ( m ‐TTFTB) 3 ‐Tetrathiafulvalene‐tetrabenzoate) trimer building blocks are beneficial for the stability radicals due to delocalization unpaired electron. Hexanuclear rare‐earth‐cluster‐based 1D chains further enhance frameworks. The state middle TTF in observed by change central C−C and C−S bond distances configuration single‐crystal X‐ray diffraction. characteristics also confirmed electron paramagnetic...
Abstract Redox‐active tetrathiafulvalene (TTF)‐based covalent organic frameworks (COFs) exhibit distinctive electrochemical and photoelectrical properties, but their prevalent two‐dimensional (2D) structure with densely packed TTF moieties limits the accessibility of redox center constrains potential applications. To overcome this challenge, an 8‐connected linker (TTF‐8CHO) is designed as a new building block for construction three‐dimensional (3D) COFs. This approach led to successful...
A multiepi (ME) superjunction (SJ) MOSFET with a lightly-doped MOS-channel diode (MCD) is studied by TCAD simulations. When the p-pillar formed ME process, resistance of can be much higher than that uniformly doped p-pillar, which helps to suppress reverse recovery oscillations body diode. Besides, introducing lightly MCD, electrons easily flow from n-pillar into source contact when in ON-state. Thus, hole injection efficiency lowered reduce charge ( Q <sub...
In this work, the electron irradiation effects and post-irradiation annealing (PIA) response on SiC MOSFETs were investigated analyzed in terms of evolution oxide- interface-trap charges after PIA. It is found that leads to significant decrease Ron, degraded blocking characteristics, negative shift capacitance which can be ascribed promoted generation positively charged oxide interface traps by irradiation. Interestingly, these electrical properties partly or completely recovered...