A5020516667- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Hydrocarbon exploration and reservoir analysis
- Neuroscience and Neural Engineering
- Transition Metal Oxide Nanomaterials
- Perovskite Materials and Applications
- Asphalt Pavement Performance Evaluation
- 2D Materials and Applications
- Infrastructure Maintenance and Monitoring
- Photonic and Optical Devices
- Geological and Geochemical Analysis
- Paleontology and Stratigraphy of Fossils
- earthquake and tectonic studies
- Optical Network Technologies
- Gas Sensing Nanomaterials and Sensors
- Geochemistry and Elemental Analysis
- Advancements in PLL and VCO Technologies
- Geological and Geophysical Studies
- Geoscience and Mining Technology
- Concrete and Cement Materials Research
- Smart Materials for Construction
- Seismic Imaging and Inversion Techniques
- MXene and MAX Phase Materials
Lanzhou University
2016-2025
Sinopec (China)
2019-2025
Institute of Microelectronics
2009-2022
State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation
2022
MIT University
2022
RMIT University
2022
RMIT Europe
2022
Chinese Academy of Sciences
2009-2020
Lanzhou City University
2016
State Council of the People's Republic of China
2016
Evolution of growth/dissolution conductive filaments (CFs) in oxide-electrolyte-based resistive switching memories are studied by situ transmission electron microscopy. Contrary to what is commonly believed, CFs found start growing from the anode (Ag or Cu) rather than having reach cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside oxide-electrolyte proposed. Detailed facts importance specialist readers published as ”Supporting Information”. Such documents...
In this paper, the resistive switching characteristics in a Cu/HfO2:Cu/Pt sandwiched structure is investigated for multilevel non-volatile memory applications. The device shows excellent performance, including good endurance, long retention time, fast operation speed and large storage window (ROFF/RON>107). Based on temperature-dependent test results, formation of Cu conducting filaments believed to be reason resistance from OFF state ON state. By integrating mechanism study fabrication,...
The employ of natural biomaterials as the basic building blocks electronic devices is growing interest for biocompatible and green electronics. Here, resistive switching (RS) based on naturally silk protein with configurable functionality are demonstrated. RS type can be effectively exactly controlled by controlling compliance current in set process. Memory triggered a higher current, while threshold lower current. Furthermore, two types memory devices, working random access WORM modes,...
The reliable resistive switching properties of Au/ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> / Ag structure fabricated with full room temperature process are demonstrated in this letter. tested devices show low operation voltages (< 1 V), high resistance ratio (about 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> ), fast speed (50 ns), and data retention (ten years extrapolation at both RT 85 °C). Moreover, the...
Abstract High density 3-dimensional (3D) crossbar resistive random access memory (RRAM) is one of the major focus new age technologies. To compete with ultra-high NAND and NOR memories, understanding reliability mechanisms scaling potential 3D RRAM array needed. Thermal crosstalk most critical effects that should be considered in application. The Joule heat generated inside device will determine switching behavior itself for dense arrays, temperature surrounding may lead to a consequent...
Abstract Metal oxide‐based photoelectrochemicals (PEC) are promising for solar‐fuel conversion if the issues of excessive charge carrier recombination in bulk can be resolved. Ferroelectric modulation photoelectrodes is a remedial strategy but less available due to contradiction between screening effect and free collection. This work designed fabricated novel ferroelectric‐modulated photocathode (p‐type CuBi 2 O 4 /PbZrTiO, CBO/PZT) with gird‐like gold (G‐Au) collector under theoretical...
Abstract High operating temperature (HOT) broadband photodetectors are urgently necessary for extreme condition applications in infrared‐guided missiles, infrared night vision, fire safety imaging, and space exploration sensing. However, conventional show dramatic carrier mobility decreases losses with low photoresponsivity at HOT due to the increased scattering channels high temperatures. Herein, from room 470 K developed first time by large‐area black phosphorus (BP)/PtSe 2 films device...
The ZrO2 films with Au nanocrystals embedded (ZrO2:nc-Au) are fabricated by e-beam evaporation, and the self-rectifying effect in Au/ZrO2:nc-Au/n+ Si sandwich structure is investigated. Self-rectifying resistive switching characteristics obtained when memory switched to low-resistance state (LRS). It found that Schottky contact at Au/ZrO2 interface limits charge injection under reverse bias, while forward bias current limited space charge, resulting a rectification of 7×102 ±0.5 V LRS, which...
In this letter, the resistive random access memory (RRAM) with metal–insulator–metal structure is investigated for first time under radiation conditions. The fabricated Cu-doped <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$\hbox{HfO}_{2}$</tex></formula> -based RRAM devices are found to have immunity from xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$^{60}\hbox{Co}\...
The effect of nitrogen doping by the NH3 plasma treatment approach on resistive switching properties a HfO2-based random access memory (RRAM) device is investigated. Test results demonstrate that significantly improved performances are achieved in RRAM doping, including low operating voltages, uniformity parameters, satisfactory endurance and long retention characteristics. Doping proposed to suppress stochastic formation conducting filaments HfO2 matrix thus improve Pt/Ti/HfO2/Pt device.
In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of Ni/ZrO2/Pt device. The device shows stable bipolar behaviors after forming process, which is similar to Ag/ZrO2/Pt Cu/ZrO2/Pt devices. Using in situ transmission electron microscopy, observe real time that several conductive filaments are formed across ZrO2 layer between Ni Pt electrodes forming. Energy-dispersive X-ray spectroscopy results confirm main composition filaments. ON-state...
In this Letter, we first demonstrate periodically and independently tunable double Fano resonances (DFRs) using waveguide-coupled cavities consisting of two silicon microring resonators (MRRs) a feedback-coupled waveguide. The proposed device is fabricated on the silicon-on-insulator substrate standard complementary metal-oxide-semiconductor fabrication process. DFR can be tuned by changing resonant wavelengths MRRs thermo-optic effect. highest extinction ratio measured to as high 29.20 dB,...
Metal halides have been demonstrated to be promising candidates for X-ray detectors. However, its large leakage current caused by the severe ion migration and intrinsic defect substantially degrades device performance. In this work, an asymmetric BA2CsPb2I7-CsPbI3 planar heterojunction detector is designed suppress current. Both experimental theoretical calculations demonstrate that: 1) enlarged energy (0.80 eV) conductivity mutation at interface ensure stable baseline current; 2) CsPbI3...
In this letter, the insertion of a Cu nanocrystal (NC) layer between Pt electrode and <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{ZrO}_{2}$</tex></formula> film is proposed as an effective method to improve resistive switching properties in -based memory. This Cu/ :Cu/Cu NC/Pt memory exhibits asymmetric nonpolar behavior, low operating voltage ( Notation="TeX">$<$</tex></formula> 1.2 V),...
The stabilization of the resistive switching characteristics is important to random access memory (RRAM) device development. In this paper, an alternative approach for improving in ZrO2-based devices has been investigated. Compared with Cu/ZrO2/Pt structure device, by embedding a thin TiOx layer between ZrO2 and Cu top electrode, Cu/TiOx–ZrO2/Pt exhibits much better characteristics. improvement might be attributed modulation barrier height at electrode/oxide interfaces.
Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome sneaking current issue in crossbar structure. In this letter, we have successfully demonstrated prototype device inherent rectifying property a-Si/WO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> bilayer After forming process, devices exhibit obvious forward/reverse ratio 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at...
In this letter, current sweeping programming mode is proposed as an efficient method to improve the uniformity of switching properties resistive memory devices. Based on measurement results reset process filament-based <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$ \hbox{Cu}/\hbox{HfO}_{2}/\hbox{Pt}$</tex></formula> devices, (CSM) can significantly reduce distributions Notation="TeX">$R_{\rm...
Diode-like volatile resistive switching as well nonvolatile behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during electroforming process, either or is observed. With lower (<10 μA), device exhibits diode-like with rectifying ratio over 10(6). The permanent transition from to can be obtained by applying higher of 100 μA. Furthermore, using different reset voltages, multilevel memory characteristics high uniformity. coexistence and same opens areas...
Lithium niobate on insulator (LNOI) has been demonstrated as a promising platform for photonic integrated circuits (PICs), thanks to its excellent properties such strong electro‐optic effect, low material loss, and wide transparency window. Herein, monolithic PIC high‐speed data communication application lithium‐niobate‐etchless with silicon nitride (Si 3 N 4 ) loading is proposed demonstrated. The fabricated consists of four racetrack resonator modulators pair four‐channel mode...