A5042138430- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Graphene research and applications
- Perovskite Materials and Applications
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and devices
- Conducting polymers and applications
- Electronic and Structural Properties of Oxides
- Organic Electronics and Photovoltaics
- Electrocatalysts for Energy Conversion
- Analytical Chemistry and Sensors
- Fuel Cells and Related Materials
- Luminescence and Fluorescent Materials
- Magnetic and transport properties of perovskites and related materials
- Nanowire Synthesis and Applications
- Ferroelectric and Piezoelectric Materials
- Organic Light-Emitting Diodes Research
- Advanced battery technologies research
- GaN-based semiconductor devices and materials
- Advanced Thermoelectric Materials and Devices
- Polydiacetylene-based materials and applications
- Covalent Organic Framework Applications
- Semiconductor Quantum Structures and Devices
Nanjing University of Posts and Telecommunications
2022-2025
Guangdong Greater Bay Area Institute of Integrated Circuit and System
2024
Bay Institute
2024
Collaborative Innovation Center of Advanced Microstructures
2016-2023
Nanjing University
1999-2023
Beijing Normal University
2014-2015
Abstract The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics. Here, by combining solution-processed monolayer crystal, ferroelectric HfZrO x gating van der Waals fabrication, we realize OTFTs that simultaneously deliver transconductance sub-60 mV/dec switching, under one-volt operating voltage. overall optimization transconductance, subthreshold swing output resistance leads to transistor intrinsic amplifier...
Abstract Flexible thermoelectrics, including flexible thermoelectric materials and devices, can generate electricity by utilizing the small temperature difference between human body surrounding environment, exhibiting great potential for continuous powering of wearable devices. It has long been assumed that inorganic are usually brittle at room except size‐induced flexibility. Until recently, this perception overturned discovery semiconductors with intrinsic plastic deformability. Herein,...
Understanding spinterfaces between magnetic metals and organic semiconductors is essential to unlock the great potentials that materials host for spintronic applications. Although plenty of efforts have been devoted studying devices, exploring role metal/molecule at two-dimensional limit remains challenging because excessive disorders traps interfaces. Here, we demonstrate atomically smooth interfaces through nondestructively transferring electrodes on epitaxial grown single-crystalline...
Novel low dimensional quantum phenomena at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces are expected after the quasi two electron gas similar to that of (001) LAO/STO was found this system. Here, we report superconductivity with a superconducting transition temperature ≅ 184 mK interfaces. The characteristics consistent our analysis based on Berezinskii-Kosterlitz-Thouless transition. estimated layer thickness is about 18 nm. This discovery may inspire new studies and open additional...
Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, difficulties in picking up FM metals with strong adhesion and achieving conductance match between spin transport channels make it challenging fabricate high-quality 2D devices using transfer techniques. Here, we...
A near-infrared aza-BODIPY dye is developed for organic photodetectors. The device achieves a high D* value and fast-response speed of 0.5 μs. Importantly, our work innovatively utilizes the high-performance NIR OPD in laser microphone system.
Phase transition from the semiconducting hexagonal (2H) phase to metallic monoclinic (1T') in two-dimensional (2D) metal dichalcogenides like MoTe2 is not only of great importance fundamental study but also technological significance for broad device applications. Here we report a universal, facile, scalable and reversible engineering technique (between 2H 1T' phases) both monolayer few-layer based on soft hydrogen plasma treatment. The → was confirmed by series characterizations including...
A GaN-based metal–insulator–semiconductor (MIS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 instead of conventional oxides as insulator gate. Because the polarization field provided and high dielectric constant insulator, capacitance–voltage characteristics metal–ferroelectric–semiconductor (MFS) structures are markedly improved compared to those other previously studied GaN MIS structures. The active layer in MFS can reach inversion just under bias smaller than 5...
The interfacial atomic arrangement, which is different from that in the bulk form of heterojunction, can induce a reconstruction electrostatic field at interface. For conventional semiconductor heterointerfaces, it known such results band bending, creating quantum well two-dimensional electron gas (2DEG) formed. In this article, we show mechanism still works multivalent oxide heterojunction: for...
Van der Waals (vdW) heterostructures based on inorganic layered materials have been demonstrated as potential candidates for a variety of electronic applications due to their flexibility in energy band engineering. However, the presence unstable charge-trapping states atomically thin two-dimensional (2D) may limit performance devices. Here, we aim conduct systematic investigation hybrid heterostructured memory devices that consist 2D organic and materials. The objective is explore these...