Abstract Electrolyte-gated transistors can function as switching elements, artificial synapses and memristive systems, could be used to create compact powerful neuromorphic computing networks. However, insight into the underlying physics of such devices, including complex ion dynamics resulting capacitances, remains limited. Here we report a concise model for transient ion-dynamic capacitance in electrolyte-gated transistors. The theory predicts that plasticity, high apparent mobility, sharp...

Abstract In this study, UV-visible flexible resistivity-type photo-detectors were demonstrated with CdS-nanowires (NWs) percolation network channel and Ag-NWs electrode. The devices fabricated on Mixed Cellulose Esters (MCE) membrane using a lithographic filtration method combined facile non-transfer process. strong adhesion, fast response time, decay high photo sensitivity. performance could be attributed to the quality single crystalline CdS-NWs, encapsulation of NWs in MCE matrix...

Abstract Many advanced materials have been developed for organic field‐effect transistors (OFETs) or thin‐film (TFTs) based on and hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that strongly limited progress in the design molecules, understanding transport mechanisms, circuit applications OFETs. In this review, device physics ideal is discussed first to understand factors limit...

In this Letter, three-terminal transistor-based artificial synapses are proposed that simply constructed with a solution-processed InOx channel and AlOx electrolyte gate. Paired pulse facilitation short-term potentiation (STP) realized modulated by adjusting the amplitude, duration, interval time of spiking pulses. Furthermore, STP is transferred to long-term (LTP) increasing amplitude number. addition, spike-timing-dependent plasticity demonstrated. The high density hydrogen in low...

Abstract Electroluminescence (EL) is essential for modern technologies, such as displays, lighting, and optical communications. To date, some kinds of artificial EL devices have been developed, including organic light‐emitting diodes (OLEDs), quantum‐dot (QD) LEDs, electrochemical cells. However, issues (e.g., inefficient charge injection, exciton quenching) limit the further performance. Here, another promising kind device reported, which called QD‐electrolyte LED (QE‐LED). The key feature...

Gel electrolyte-gated organic electrochemical transistors (OECTs) are promising bioelectronic devices known for their high transconductance, low operating voltage, and integration with biological systems. Despite extensive research on the performance of OECTs, a precise model defining dependence OECT gel electrolytes is still lacking. In this work, we refine device to comprehensively account electrical double layer (EDL)’s capacitance electrolyte. Both experimental data theoretical...

WO3-based electrochemical transistors (ECTs) are recognized as candidates for three-terminal memristors due to their high on–off ratio, long retention time, and rapid switching speed. However, patterned fabrication often relies on complex vacuum systems or extreme processing conditions, hindering cost-effective scalability. Here, we developed a novel wet etching technique integrated with sol–gel-derived WO3 channels, enabling ambient-air of Nafion-WO3 ECTs. The wet-etched devices achieve an...

Schottky barrier thin-film transistors (SBTFTs) are promising for low-power electronics due to advantages such as low saturation voltage and high stability. In this study, we developed a high-performance bilayer IGZO SBTFT by combining 4.7 nm atomic layer deposition (ALD) with an 11.8 sputtering layer, using platinum (Pt) molybdenum (Mo) electrodes. The device exhibits dual-mode operation. TFT (SB-TFT) mode (Pt source), the structure reduces defect density, achieving very (~0.4 V),...

Abstract Thin film transistors (TFTs) with solution processed AlInO/In 2 O 3 heterostructure channels are demonstrated enhanced performance. TFTs single AlInO various Al concentrations used for comparison. Appropriate of in layer can slightly improve the TFT For concentration higher than 20%, resistance is so large that no typical transfer characteristics observed. In contrast, overall performances greatly improved using channel. High field effect mobility achieved greater 40 cm V −1 s a sub...

In developing low-power electronics, low-voltage transistors have been intensively investigated. One of the most important findings is that some high-k oxide gate dielectrics can lead to remarkable enhancement apparent mobility in thin-film (TFTs), which not clearly understood. Here, we investigate InOx TFTs with solution-processed AlOx dielectrics. At very low frequencies (<1 Hz), films feature strong voltage-dependent capacitance. Also, cyclic voltammograms show clear features...

Indium tin oxide (ITO) is generally used as an electrode material but has recently been demonstrated to be a competitive candidate for use in semiconductor layers high-performance thin-film transistors (TFTs), due its high mobility and strong resistance wet-etching. Here, we demonstrate TFTs using solution-processed, ultra-thin ITO films with outstanding switching performance. These devices exhibit of up 15 cm2 V−1 s−1 on-off ratio 108. Because the device exhibits significant instability...

Ultrathin films of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> have demonstrated high transistor mobility yet exhibit vulnerability to stability degradation under bias stress. Here, we engineered ultrathin via atomic layer deposition, complemented with a cation-doped ZnSnO semiconductor for comprehensive passivation intrinsic and surface imperfections. The resulting thin-film...

Advanced field-effect transistors (FETs) with nontrivial gates (e.g., offset-gates, mid-gates, split-gates, or multi-gates) hybrid integrations diodes, photodetectors, field-emitters) have been extensively developed in pursuit for the "More-than-Moore" demand. But understanding their conduction mechanisms and predicting current-voltage relations is rather difficult due to countless combinations of materials device factors. Here, it shown that they could be understood within same physical...

In this work, a solution processed Al-In-O/InOx bilayer resistive switching random access memory (RRAM) is demonstrated at temperature as low 180 °C. The cell exhibits remarkable forming free characteristics with stable data retention and set/reset voltages. More importantly, shows properties under different bending angles on flexible substrate. mechanism was systematically investigated. Compared to single layer devices, an Al-In-O mixing induced by the process in RRAM. first principle...

Synaptic transistors with low-temperature, solution-processed dielectric films have demonstrated programmable conductance, and therefore potential applications in hardware artificial neural networks for recognizing noisy images. Here, we engineered AlOx/InOx synaptic via a solution process to instantiate networks. The show long-term potentiation under appropriate gate voltage pulses. network, consisting of one input layer output layer, was constructed using 9 × 3 transistors. By programming...

Oxide electrolyte-gated transistors have shown the ability to emulate various synaptic functions, but they still require a high gate voltage form long-term plasticity. Here, we studied based on InOx with tungsten doping (W-InOx). When tungsten-to-indium ratio increased from 0% 7.6%, memory window of transfer curve 0.2 V 2 over small sweep range −2 2.5 V. Under 50 pulses duty cycle 2%, conductance transistor 40-fold 30,000-fold. Furthermore, W-InOx exhibited improved paired pulse facilitation...

Abstract Deposition of indium oxide base films for high‐mobility thin film transistors (TFTs) has been an important part in the implementation high‐resolution and high‐frequency display back panels. In this study, three types 2 O 3 (InO) have fabricated TFTs using atomic layer deposition (ALD), pulsed laser (PLD), solution process, respectively. ALD‐derived InO show controllable grain formation optimized field effect mobility ≈100 cm V −1 s both conventional transistor measurements critical...

Oxygen incorporated solution-processed high-<italic>κ</italic> La₂O₃ dielectrics exhibit large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films.

The oxygen related defects in the solution combustion-processed InZnO vitally affect field-effect mobility and on-off characteristics thin film transistors (TFTs). We use photoelectron spectroscopy to reveal that these can be well controlled by adjusting atmosphere flow rate during combustion reaction, but are hardly affected further post-annealing after reaction. In device performance, threshold voltage of InZnO-TFTs was regulated a wide range from 3.5 V 11.0 V. To compromise high good...

Vertical transistors with conductive-network electrodes composed of carbon- or metal-based nanowires meshes are attractive because their high current density, low operational voltage, and degree integration. However, the devices lack concise physical images to understand operations explicit design rules achieve necessary performance, such as sharp subthreshold swing a large on:off ratio. Here, we develop device theory images, which generally applicable for organic inorganic semiconductors....