A5058859418- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Organic Light-Emitting Diodes Research
- Semiconductor materials and devices
- Conducting polymers and applications
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Crystallization and Solubility Studies
- Chalcogenide Semiconductor Thin Films
- X-ray Diffraction in Crystallography
- Organic Electronics and Photovoltaics
- ZnO doping and properties
- Advanced Memory and Neural Computing
- Luminescence and Fluorescent Materials
- 2D Materials and Applications
- Laser-Ablation Synthesis of Nanoparticles
- Nanocluster Synthesis and Applications
- Nonlinear Optical Materials Studies
- Advanced Sensor and Energy Harvesting Materials
- Ga2O3 and related materials
- Analytical Chemistry and Sensors
Sun Yat-sen University
2019-2024
State Key Laboratory of Optoelectronic Materials and Technology
2019
Colloidal quantum wells (CQWs) have emerged as a promising family of two-dimensional (2D) optoelectronic materials with outstanding properties, including ultranarrow luminescence emission, nearly unity yield, and large extinction coefficient. However, the performance CQWs-based light-emitting diodes (CQW-LEDs) is far from satisfactory, particularly for deep red emissions (≥660 nm). Herein, high efficiency, ultra-low-efficiency roll-off, luminance, extremely saturated CQW-LEDs are reported. A...
Perovskite light-emitting diodes (PeLEDs) emerge as a promising class of optoelectronic devices for next-generation displays and lighting technology. However, the performance blue PeLEDs lags far behind that their green red counterparts, including unachieved trade-off between high efficiency luminance, severe roll-off, unsatisfactory power efficiency. Here, multi-functional chiral ligand L-phenylalanine methyl ester hydrochloride is strategically introduced into quasi-2D perovskites, which...
High-performance phototransistor-based solar-blind (200-280 nm) ultraviolet (UV) photodetectors (PDs) are constructed with a low-cost thin-film ZnO/Ga2O3 heterojunction. The optimized PD shows high spectral selectivity (R254/R365 > 1 × 103) photo-to-dark current ratio of ∼104, responsivity 113 mA/W, detectivity 1.25 1012 Jones, and response speed 41 ms under 254 nm UV light irradiation. It is found that the gate electrode three-terminal phototransistor can amplify increase because different...
Abstract Many advanced materials have been developed for organic field‐effect transistors (OFETs) or thin‐film (TFTs) based on and hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that strongly limited progress in the design molecules, understanding transport mechanisms, circuit applications OFETs. In this review, device physics ideal is discussed first to understand factors limit...
Abstract The past few years have seen a significant improvement in the efficiency of organometal halide‐perovskite‐based light‐emitting diodes (PeLEDs). However, poor operation stability devices still hinders commercialization this technology for practical applications. Despite extensive studies on degradation mechanisms perovskite thin films, it remains unclear where and how occurs PeLED. Electroabsorption (EA) spectroscopy is applied to study process PeLEDs during directly evaluates each...
White organic light-emitting diodes (WOLEDs) with ultrahigh color rendering index (CRI ≥90) are ideal for lighting. However, CRIs usually obtained via complicated architectures and blue molecular emitters required. Herein, the combination of exciplex/electroplex green/red phosphors, emitter-free doping-free WOLEDs have been developed. An CRI 95 is achieved, which highest WOLEDs. Additionally, a maximum total external quantum efficiency 7.5% power 21.3 lm W <sup...
Abstract Perovskite light‐emitting diodes (PeLEDs) emerge as a promising kind of optoelectronic devices for the next‐generation full‐color display and white‐lighting technology. However, performance blue PeLEDs is far from satisfactory some significant properties still remain unknown. Herein, first time, active‐matrix potential has been unveiled by virtue highly efficient, bright, color‐stable PeLEDs. Through synergistic strategy ligand‐, anti‐solvent‐, device‐, additive engineering,...
Two-dimensional (2D) nanocrystals are promising for optoelectronic and microelectronic technologies. However, the performance of 2D nanocrystal light-emitting diodes (LEDs) remains limited. Here, exciton dynamics rationally controlled by both shell engineering device engineering, obtaining colloidal quantum well LEDs (CQW-LEDs) with superior performance. The formation CQW films on charge transport layers shows an excellent photoluminescence yield 76.63%. An unreported relationship among...
Abstract Revealing the intrinsic electrical properties is basis of understanding new functional materials and developing their applications. However, in nonideal field‐effect transistors (FETs), conventional current–voltage characterizations do not accurately probe charge transport, particularly for newly developed semiconductors. Here, a generalized gated four‐probe (G‐GFP) technique developed, which detects dynamic changes carrier accumulation transport. The suitable exploring...
A novel organic electrochemical transistor is proposed by adopting a dual-network hydrogel as the electrolyte.
Electronic doping has endowed colloidal quantum wells (CQWs) with unique optical and electronic properties, holding great potential for future optoelectronic device concepts. Unfortunately, how photogenerated hot carriers interact phonons in these doped CQWs still remains an open question. Here, through investigating the emission we have observed efficient phonon cascade process (i.e., up to 27 longitudinal replicas are revealed broad Cu band at room temperature) identified a giant...
Colloidal quantum wells (CQWs), also known as nanoplatelets (NPLs), are exciting material systems for numerous photonic applications, including lasers and light-emitting diodes (LEDs). Although many successful type-I NPL-LEDs with high device performance have been demonstrated, type-II NPLs not fully exploited LED even alloyed enhanced optical properties. Here, we present the development of CdSe/CdTe/CdSe core/crown/crown (multi-crowned) systematic investigation their properties, comparison...
Advanced field-effect transistors (FETs) with nontrivial gates (e.g., offset-gates, mid-gates, split-gates, or multi-gates) hybrid integrations diodes, photodetectors, field-emitters) have been extensively developed in pursuit for the "More-than-Moore" demand. But understanding their conduction mechanisms and predicting current-voltage relations is rather difficult due to countless combinations of materials device factors. Here, it shown that they could be understood within same physical...
Single-emitting-layer white organic light-emitting diodes (SEL-WOLEDs) have developed rapidly in recent years due to the outstanding advantages of high efficiency, simple device structure, low cost, less phase separation, and stable emission color. Nevertheless, relatively complicated host-dopant system is usually essential for most previous SEL-WOLEDs development non-doped lags behind. Hence straightforward synthesis single-white-emitting molecules still remains a great challengeable task....
A p-type/ultra-thin metal/n-doped electron injection layer is proposed to enhance the of inverted bottom OLEDs. The OLEDs exhibit an extremely-low voltage 2.97 V and efficiency 84.9 lm W −1 at 100 cd m −2 .
Reduced-dimensional (RD) metal halide perovskites (MHPs) have received much attention from scientific researchers for their highly tunable optoelectronic properties and solution processability.
Measuring the mobility of thin-film transistors fabricated using newly developed semiconductors is difficult because various factors, such as contact resistance. In this work, generalized gated four-probe and van der Pauw structure were combined to precisely measure carrier semiconductors. The method geometry-independent, suitable for gate-dependent in all operation regimes, test devices could be easily fabricated. Experimental verifications performed on specially designed InGaZnO with...
Vertical transistors with conductive-network electrodes composed of carbon- or metal-based nanowires meshes are attractive because their high current density, low operational voltage, and degree integration. However, the devices lack concise physical images to understand operations explicit design rules achieve necessary performance, such as sharp subthreshold swing a large on:off ratio. Here, we develop device theory images, which generally applicable for organic inorganic semiconductors....
Abstract: In recent years, colloidal quantum wells (CQWs), also known as semiconductor nanoplatelets, have become the new kind of promising optoelectronic material because their excellent properties, such high color purity, photoluminescence efficiency, and adjustable emissions. As a significant application CQWs, light-emitting diodes based on CQWs (or CQW-LEDs) possess number advantages, an extremely narrow spectrum, solution-processed fabrication, good compatibility with flexible...
Vertical field effect transistors (VFETs) based on conductive network electrodes feature high current density and compatibility in printing processes. Here, the device structures of VFETs are designed optimized toward good saturation a better ON–OFF ratio. Among three different structures, simple structure stands out as best: semiconducting layer is inserted below source electrode to increase injected area carriers enhance L-type channels (the along semiconductor–dielectric interface then...
In article number 1903889, Chuan Liu and co-workers review the origins critical factors that lead to organic field-effect transistors (OFETs) with deviations from ideal device models in terms of physics. The recent progress optimization strategies new perspectives for utilizing nonideal OFETs are also presented.
Abstract Oxide semiconductors feature high tunability of carrier concentrations under the control electric field. In thin film transistors (TFTs), applying dual gate has been reported to be efficient in enhancing coupling between field and channel accumulation. this work, we demonstrate nano-splitting field-surrounding semiconducting channels (based on InGaZnO) TFTs, which is fabricated by facile subwavelength photolithography. such have 200 nm gaps parallel drain field, are wrapped oxide...
Vertical static induction transistors (SITs), with vertically arranged source, porous gate, and drain electrodes, were proposed in 1950s have recently gained new attention because of their suitability as flexible substrates for hybrid integration light-emitting diodes. However, the understanding them is hindered by Schottky gate leakage relies on case-by-case simulations. Here, we derive concise expressions channel potential current-voltage characteristics ideal SITs, including subthreshold...