Qingyu Chen

ORCID: 0000-0002-7573-7803
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About
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Research Areas
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering
  • High-Temperature Coating Behaviors
  • Radiation Effects in Electronics
  • Advanced materials and composites
  • Magnesium Alloys: Properties and Applications
  • Bone Tissue Engineering Materials
  • Semiconductor materials and devices
  • Aluminum Alloys Composites Properties
  • VLSI and Analog Circuit Testing
  • Conducting polymers and applications
  • Advanced Sensor and Energy Harvesting Materials
  • Neural Networks and Reservoir Computing
  • Metal and Thin Film Mechanics
  • Transition Metal Oxide Nanomaterials
  • Robotics and Sensor-Based Localization
  • Blood properties and coagulation
  • Metal Alloys Wear and Properties
  • Advanced ceramic materials synthesis
  • Cancer-related gene regulation
  • Hemoglobinopathies and Related Disorders
  • Photoreceptor and optogenetics research
  • Software Reliability and Analysis Research
  • Physical Unclonable Functions (PUFs) and Hardware Security

Peking University
2017-2024

Jiujiang University
2010-2023

Shanghai Sixth People's Hospital
2023

Weatherford College
2023

Shenzhen University
2023

Dalian Maritime University
2023

Institute of Microelectronics
2018-2021

Jiangsu University
2018-2019

University of Saskatchewan
2016-2019

National Center for Nanoscience and Technology
2019

Abstract With the ongoing advancement in sensor technologies, development of intelligent, secure, and low‐carbon vehicles will be possible near future. However, providing continuous power to numerous onboard sensors consumes substantial amounts from vehicle, resulting shortened running times. Herein, a self‐powered noncontact triboelectric nanogenerator (SNC‐TENG) with ultralong‐distance detection high sensitivity is proposed, which can used as ambient perception for smart vehicles. The...

10.1002/adfm.202306381 article EN Advanced Functional Materials 2023-09-13

Abstract Lowering the programing power consumption is of importance to capacitate high‐efficiency flexible neuromorphic electronics. However, this remains particularly challenging for organic memristor due its high reset current. Here a robust route reported capitalize on graphene with native nanopores as barrier layer parylene‐based memristors, eventually conferring devices be operated ultralow current (<50 µA) and programming (<150 µW). The graphene‐integrated device in architecture...

10.1002/aelm.201800852 article EN Advanced Electronic Materials 2019-02-13

Au@peptide937 nanorods for detecting bacteria by specific binding and killing due to the local hyperthermal effect.

10.1039/c8tb01835a article EN Journal of Materials Chemistry B 2018-01-01

In this letter, we experimentally demonstrated a novel resistive device with hybrid switching mode that can be alternated between volatile threshold and non-volatile switching. The consists of dual-functional layers VO2 /HfO2 sandwiched by symmetrical TiN electrodes. A >20 unified ratio for selectivity memory window is obtained. Owing to the stable behavior HfO2 insulator-metal transition VO2, shows excellent uniform parameters in both modes high on-state current density (1E4 A/cm <sup...

10.1109/led.2020.2992680 article EN IEEE Electron Device Letters 2020-05-05

The advent of foundation models (FMs) is transforming medical domain. In ophthalmology, RETFound, a retina-specific FM pre-trained sequentially on 1.4 million natural images and 1.6 retinal images, has demonstrated high adaptability across clinical applications. Conversely, DINOv2, general-purpose vision 142 shown promise in non-medical domains. However, its applicability to tasks remains underexplored. To address this, we conducted head-to-head evaluations by fine-tuning RETFound three...

10.48550/arxiv.2502.06289 preprint EN arXiv (Cornell University) 2025-02-10

Abstract 3D integration of vertical resistive random access memory (VRRAM) with organic materials is promising for ultra‐high density flexible data storage. However, it extremely challenging to heterogeneously fabricate an VRRAM due complicated issues such as chemical/thermal robustness, compatibility organic/inorganic materials, and processes stacking/patterning multi‐layer organic/metal films. Herein, based on parylene‐C experimentally demonstrated a standard complementary metal oxide...

10.1002/aelm.202000864 article EN Advanced Electronic Materials 2020-11-25

In this study, a conventional 80 kW class plasma spraying system was used to produce yttria-stabilized-zirconia (YSZ) coatings by PS-PVD at pressure of 100 Pa. A shroud attached in the front nozzle restrain expansion jet. The torch operated an arc power 45 and YSZ were deposited powder feed rate 0.2 g/min. Optical emission spectroscopy diagnose particle state surface morphology cross-sectional characterized field scanning electron microscope. It is found that amount evaporation significantly...

10.1080/10426914.2015.1019100 article EN Materials and Manufacturing Processes 2015-03-09

This work demonstrates the emulation of biphasic plasticity in electrical synapses by integrating Ag-based memristor with a photosensitive element to form an optical pre-processing unit (OPU).

10.1039/d0nr08012h article EN Nanoscale 2020-12-26

The device non-idealities and array thermal cross-talk will inevitably impair the performance of RRAM-based storage neuromorphic systems. In this paper, we present modeling non-idealities, including parameter variations time-dependent fluctuation (TDV), simulation crosstalk. We also investigate impact issues on computing from device, array, algorithm perspectives, providing guidelines for technology-array-algorithm co-optimization.

10.1109/iedm13553.2020.9371968 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2020-12-12

Neurons are basic elements of the human brain to transmit and process various kinds information. Besides synaptic plasticity, neuronal intrinsic plasticity (NIP) plays a vital role in improving stabilizing neural circuit for learning adaptation environment. In this article, we emulate NIP behavior by combining hybrid VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...

10.1109/ted.2022.3152468 article EN IEEE Transactions on Electron Devices 2022-03-08

Compressed sensing with a tunable random sampling strategy has great potential in reducing the energy/time consumption during constant acquisition of external information, thereby it is considered one most promising strategies edge-terminal. In this letter, novel stochastic oscillator (TSO) based on VO2/TaOx structure was proposed and employed as core controlling device for compressed sensing. The TSO jointly governed by metal-insulator-transition (IMT) threshold switching VO2 layer...

10.1109/led.2020.3037779 article EN IEEE Electron Device Letters 2020-11-12

Polychloro-para-xylylene (parylene-C) is a flexible and transparent polymer material which has excellent chemical stability high biocompatibility. Here we demonstrate device based on single-component parylene-C with memory temperature sensing functionalities. The shows stable bipolar resistive switching behavior, remarkable storage window (>10⁴), low operation voltages, exhibiting great potential for random-access (RRAM) applications. I-V curves conductive atomic force microscopy (CAFM)...

10.3390/polym9080310 article EN cc-by Polymers 2017-07-26

Proton induced SEU cross-sections of certain functional blocks the Cyclone V FPGA are presented. Upset rates in space radiation environment estimated.

10.1109/redw.2019.8906630 article EN 2019-07-01

Vroton induced SEU cross-sections of Tegra K1 mobile processor are presented. Overall upset rates in the space radiation environment estimated.

10.1109/nsrec.2017.8115446 article EN 2017-07-01

Nanoliposomes can induce hIAPP oligomers to undergo fibrillation with distinct mechanical properties and reduced cytotoxicity.

10.1039/c9cc06264e article EN Chemical Communications 2019-01-01
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