A5007266336- Semiconductor materials and devices
- Fermentation and Sensory Analysis
- Thin-Film Transistor Technologies
- Food Quality and Safety Studies
- Organic Electronics and Photovoltaics
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Silicon Nanostructures and Photoluminescence
- Analytical Chemistry and Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Fungal and yeast genetics research
- Biofuel production and bioconversion
- Ferroelectric and Negative Capacitance Devices
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Nanowire Synthesis and Applications
- Copper Interconnects and Reliability
- Semiconductor materials and interfaces
- Enzyme Production and Characterization
- Phytase and its Applications
- Ga2O3 and related materials
- Microbial Metabolism and Applications
National Research Institute of Brewing
2012-2023
Western Region Agricultural Research Center
2022
Institute of Fruit Tree and Tea Science
2022
Muroran Institute of Technology
2009-2018
Universiti Malaysia Perlis
2009
Toyo University
2006
NTT (Japan)
2005
Oki Electric Industry (Japan)
1986-2003
Tokyo University of Agriculture and Technology
1993
Toray Industries, Inc. (Japan)
1986-1992
Raman spectra of B ion-implanted glassy carbon (GC) and hydrogenated amorphous (a-C:H) films have been measured as a function polarization direction the scattered light excitation wavelength. bands GC implanted heavily with fluence more than 5\ifmmode\times\else\texttimes\fi{}${10}^{15}$ ions/${\mathrm{cm}}^{2}$ a-C:H show frequency-independent depolarization ratio, suggesting existence ${\mathit{sp}}^{2}$ clusters in these samples. It was found that varied From comparative study films,...
Ultrathin ( approximately=6 nm) oxynitrided SiO/sub 2/ (SiO/sub x/N/sub y/) films have been formed on Si
Abstract Perovskite-type oxides showed the catalytic activity for NO decomposition above 773 K, which depended largely on constituent metal cations and their composition. Results obtained indicate that perovskite-type such as La0.8Sr0.2CoO3 are a promising catalyst having high thermal stability at elevated temperatures.
A novel method of nitridation thin SiO 2 film (<10 nm) has been achieved for the first time by in situ multiple rapid thermal processing (RTP) using oxygen (O ) and nitrous oxide (N O) as reactants. Nitrided (SiO x N y films, which nitrogen piles up about 5 at% at /Si interface, showed smaller densities electron hole traps high-field stressing compared to those pure films. However, only formed via oxidation O following ambients a large charge-to-breakdown value (>30 C/cm indicates...
Surface-enhanced Raman scattering (SERS) has been successfully applied to the surface characterization of carbon materials such as highly oriented pyrolitic graphite, glassy carbon, diamond, and fibers by evaporation Ag island films onto surface. The chemical morphological structure parallelly characterized electron energy loss spectroscopy, x-ray photoelectron field-emission scanning microscope. from outermost is found be remarkably enhanced presence (50–100 Å). crystal change graphite...
Thin films of Co‐Ag, Co‐Cu, and Fe‐Cu alloys were produced by electrochemical deposition. In this study the relationship between magnetoresistance (MR) ratio crystalline state in electrodeposited alloy is investigated Even though for Co‐Ag system it difficult to form a solid solution, precipitation phase‐separated fine particles or grains relatively straightforward. It was found that Co grain (or particle) size becomes smaller with increasing current density (1–10 mA/cm2) MR also increases....
Nitridation of a thin SiO2 film has been achieved by rapid thermal processing (RTP) using only O2 and N2O as reactants. In comparison with pure film, nitrided (SiOxNy,) (8 nm), which includes about 5 at% nitrogen at the SiOxNy/Si interface, showed large charge-to-breakdown value greater than 30C/cm2 density electron traps lower that in high-field stressing (>8 MV/cm) under condition gate negatively biased.
SiO 2 /Ge nanocrystal/SiO2 structures have been fabricated by deposition of Ge film on a SiO2 layer and subsequent oxidation the structure at temperature between 800 °C 1000 °C. Secondary ion mass spectrometry results indicate that precipitates into bulk density 1×1012 cm−2. Raman spectra show sharp peak 300 cm−1 for nanocrystallized Ge. The nanocrystal diameter is determined to be 5 nm average. In metal–insulator–silicon structure, electron storage occurs in SiO2/Ge/SiO2 potential well via...
Ta 2 O 5 -based composite thin films formed by metalorganic decomposition have been investigated with respect to their dielectric properties. The and insulating properties of (1−x)Ta2O5−xTiO2 (1−x)Ta2O5−xWO3 are found be improved compared those pure Ta2O5 films. In particular, x=0.08 composition additive TiO2 or WO3 exhibited superior maximum constant charge storage density about 20 53.6 fC/μm2, respectively, higher than (about 13 34.5 fC/μm2). temperature coefficient the dramatically...
Sub-half-micrometer dual-gate CMOSFETs have been successfully fabricated with 6-nm-thick nitrided SiO/sub 2/ gate films formed in an N/sub 2/O ambient. Excellent subthreshold characteristics and hot-carrier reliability were achieved because of the good abilities 2/O-nitrided both blocking boron penetration reducing electron traps. The major advantage this nitridation is that process essentially hydrogen-free. This fabrication promising as a key technology toward 1/4- mu m-rule CMOS LSIs.<...
Abstract Sake yeast was developed exclusively in Japan. Its diversification during breeding remains largely uncharacterized. To evaluate the processes of sake lineage, we thoroughly investigated phenotypes and differentiation 27 strains using high-dimensional, single-cell, morphological phenotyping. Although genetic diversity lineage is relatively low, its has expanded substantially compared to that Saccharomycescerevisiae species as a whole. Evaluation different types showed generation...
Titanium oxide (TiO 2 ) thin films were formed on a Si substrate by metalorganic decomposition at temperatures ranging from 600°C to 1000°C. As-deposited in the amorphous state and completely transformed after annealing crystalline structure with anatase as its main component. During crystallization oxygen atomosphere, reaction between TiO occurred interface, which resulted formation of interfacial SiO layer. Capacitance-voltage measurement showed good dielectric properties maximum constant...
A 5.3-kbp fragment of the KHS gene was cloned from a genomic bank Saccharomyces cerevisiae No. 115 constructed with an E. coli as host and YEpl3 vector. non-killer yeast strain transformed to killer multi-copy vector containing gene, transformant could secrete 3-4 times more toxin into culture media than donor, 115. The purified 80-fold filtrate by gel filtration column chromatography. nucleotide sequence 2.8-kbp DNA that enough for expression activity identified, we found open reading frame...
High-resolution transmission electron microscopy (HRTEM) with 0.3-nm resolution, scanning using diffraction and energy loss spectroscopy (EELS) 0.7-nm resolution have been employed to characterize the SiO2/Si(100) interface structure of ultrathin (5–12 nm) SiO2 films grown by rapid thermal oxidation (RTO) at 1100 °C. In HRTEM image, film RTO in dry oxygen ambient seems be uniform. The TED patterns also showed that atomic abruptly changes from crystalline silicon amorphous oxide network...
A reliable method of forming very thin SiO/sub 2/ films (<10 nm) has been developed by rapid thermal processing (RTP) in which situ multiple RTP sequences have employed. Sub-10-nm-thick formed single-step oxidation (RTO) are superior to conventional furnace-grown on the 2//Si interface characteristics, dielectric strength, and time-dependent dielectric-breakdown (TDDB) characteristics. It confirmed that reliability film can be improved pre-oxidation cleaning (RTC) operated at 700-900 degrees...
The interface trap density of states Dit ultrathin SiO2 film has been investigated as a function process variables. parameters used were oxidation temperature (1000–1200 °C), oxide thickness (4–10 nm), and annealing condition, including ambient (deuterium, argon, in vacuum), (500 900 time (10–120 s). Analysis as-grown films showed that the decreases with increasing and/or thickness. With argon or vacuum at °C, exponentially initial stage, then starts to increase linearly time. Similar...
Dielectric and physical properties of N 2 O-oxynitrided (RTON) ultrathin (5-10 nm) SiO films formed by in situ multiple rapid thermal processing have been investigated. In high-field stressing under positive negative polarity biases, the RTON showed a much lower electron-trap generation rate, field-induced leakage current higher charge-to-breakdown value, as compared to those pure thermally NH 3 -nitrided (RTN) films. Fourier transform-infrared reflection attenuated total reflectance (FT-IR...
Crystalline CeO 2 films were formed on a Si (100) substrate by metalorganic decomposition at temparatures ranging from 600°C to 800°C. As-deposited in the amorphous state and completely transformed crystalline above 600°C. However, during crystallization oxygen atomosphere, reaction between occurred interface, which resulted formation of thin interfacial SiO layer. Capacitance-voltage measurement these showed good dielectric properties with constant 15, is more than three times higher that ....