A5065791813- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Photovoltaic System Optimization Techniques
- Glass properties and applications
- solar cell performance optimization
Shanghai Institute of Microsystem and Information Technology
2020-2024
Chinese Academy of Sciences
2020-2024
University of Chinese Academy of Sciences
2020-2023
Flexible solar cells have a lot of market potential for application in photovoltaics integrated into buildings and wearable electronics because they are lightweight, shockproof self-powered. Silicon been successfully used large power plants. However, despite the efforts made more than 50 years, there has no notable progress development flexible silicon their rigidity1-4. Here we provide strategy fabricating large-scale, foldable wafers manufacturing cells. A textured crystalline wafer always...
To decrease the series resistance in front gallium‐doped zinc oxide (GZO) silicon heterojunction (SHJ) solar cells caused by high‐resistivity GZO films, stack films including tungsten‐doped indium (IWO) which have better lateral transport properties are used as transparent conductive (TCO) to improve charge transport. The crystal structure and electrical optical characteristics of GZO/IWO stacks with different thickness ratios investigated, current–voltage performance SHJ rear film analyzed....
P-type hydrogenated nanocrystalline silicon (nc-Si:H) has been used as a hole-selective layer for efficient n-type crystalline heterojunction (SHJ) solar cells. However, the presence of an additional valence band offset at interface between intrinsic amorphous and p-type nc-Si:H films will limit hole carrier transportation. In this work, it found that when heavily boron-doped oxide deposited with high hydrogen dilution to silane (pB) was inserted into their interface, fill factor SHJ cells...
To improve the doping efficiency of boron (B)-doped hydrogenated amorphous silicon [a-Si:H(p)] films, a three-step post-B-doping method was developed. This post-treatment presents potential to enhance not only B content but also hydrogen in a-Si:H(p) films by increasing number treatment times. Based on secondary ion mass spectroscopy and dark conductivity measurements, concentration B-doping were effectively improved treatment. Furthermore, it demonstrated that atomic generated during...