A5016199379- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Perovskite Materials and Applications
- Photovoltaic System Optimization Techniques
- Nanowire Synthesis and Applications
- solar cell performance optimization
- GaN-based semiconductor devices and materials
- Integrated Circuits and Semiconductor Failure Analysis
- Conducting polymers and applications
- Organic Electronics and Photovoltaics
- Luminescence Properties of Advanced Materials
- Advanced NMR Techniques and Applications
- Advanced Chemical Physics Studies
- Sensor Technology and Measurement Systems
- Advancements in PLL and VCO Technologies
- Advancements in Battery Materials
- Microfluidic and Bio-sensing Technologies
- Organoboron and organosilicon chemistry
- Advanced Battery Technologies Research
- Radioactive contamination and transfer
- Thermal Radiation and Cooling Technologies
- Advanced Battery Materials and Technologies
Soochow University
2020-2025
King Abdullah University of Science and Technology
2020-2021
University of Shanghai for Science and Technology
2020
Shaanxi Normal University
2018
Tohoku University
2011
Flexible solar cells have a lot of market potential for application in photovoltaics integrated into buildings and wearable electronics because they are lightweight, shockproof self-powered. Silicon been successfully used large power plants. However, despite the efforts made more than 50 years, there has no notable progress development flexible silicon their rigidity1-4. Here we provide strategy fabricating large-scale, foldable wafers manufacturing cells. A textured crystalline wafer always...
Abstract Recent achievements in amorphous/crystalline silicon heterojunction (SHJ) solar cells and perovskite/SHJ tandem place hydrogenated amorphous (a-Si:H) at the forefront of photovoltaics. Due to extremely low effective doping efficiency trivalent boron tetravalent silicon, light harvesting aforementioned devices is limited by their fill factors (FFs), a direct metric charge carrier transport. It challenging but crucial develop highly conductive doped a-Si:H with minimal FF losses. Here...
Abstract The evolution of the contact scheme has driven technology revolution crystalline silicon ( c ‐Si) solar cells. state‐of‐the‐art high‐efficiency ‐Si cells such as heterojunction (SHJ) and tunnel oxide passivated (TOPCon) are featured with passivating contacts based on doped Si thin films, which induce parasitic optical absorption loss require capital‐intensive deposition processes involving flammable toxic gasses. A promising solution to tackle this problem is employ dopant‐free...
Abstract High work function vanadium oxide (V 2 O X , < 5) is expected to induce strong upward band bending at crystalline silicon ( c ‐Si) surface thus selectively collect photogenerated hole‐carriers. However, the performance of ‐Si solar cells employing V ‐based hole‐selective contacts still under expectation. Herein, we improve hole‐selectivity in combination with NiO . The innovative /NiO stack shows reduced contact resistivity but deteriorated minority carrier lifetime due undesired...
Passivating defects at the wide‐bandgap perovskite/C60 interface without impeding interfacial charge transport can effectively enhance efficiency of perovskite/silicon tandem solar cells (TSCs). Herein, we study impact benzene‐derivative ligands with elaborately modulated binding strength and acidity on perovskites for high‐performance TSCs. Specifically, acidity/alkalinity are preliminary tuned using different functional groups ‐PO₃H₂, ‐COOH, ‐NH₂, further finely adjusted by altering chain...
Passivating defects at the wide‐bandgap perovskite/C60 interface without impeding interfacial charge transport can effectively enhance efficiency of perovskite/silicon tandem solar cells (TSCs). Herein, we study impact benzene‐derivative ligands with elaborately modulated binding strength and acidity on perovskites for high‐performance TSCs. Specifically, acidity/alkalinity are preliminary tuned using different functional groups ‐PO₃H₂, ‐COOH, ‐NH₂, further finely adjusted by altering chain...
Abstract Transition metal oxide (TMO) thin films featuring tunable work function, high transmittance, and simple fabrication process are expected to serve as carrier‐selective transport layers for high‐efficiency crystalline silicon ( c ‐Si) solar cells. TMOs prone reaction or elemental migration with adjacent materials, which leads uncontrollable optical electrical properties. In this work, V 2 O X passivating contact, a promising hole layer (HTL) thanks its is investigated implemented in p...
In this work, we present a simple and efficient solution-doping process for preparing high-quality polycrystalline silicon (poly-Si)-based passivating contacts. Commercial phosphorus or boron-doping solutions are spin-coated on crystalline (c-Si) wafers that feature SiO2/poly-Si layers; the doping is then activated by thermal annealing at high temperatures in nitrogen atmosphere. With optimized n- p-type solution annealing, poly-Si contacts featuring simultaneously low contact recombination...
Dopant-free carrier-selective contacts based on metal compounds have attracted considerable attention for high-efficiency crystalline silicon solar cells. In this work, the feasibility of using molybdenum oxynitride (MoOxNy) as an electron-selective contact layer in n-type (n-Si) cells has been demonstrated. With increase N2:Ar ratio during sputtering process, work function a MoOxNy film decreases from 4.57 to 4.26 eV, which is advantageous be electron transport layer. An efficiency 18.0%...
A high-efficiency, ultrabroadband dielectric internal reflection grating with rhombus-shaped grooves is designed by a rigorous coupled-wave analysis, and an effective method for predicting spectral bandwidths of gratings from their efficiency maps presented. The can be fabricated single material, its diffraction the −1st order reach more than 0.99. More importantly, top-hat spectrum exceeding 0.98 over 170 nm wavelength wide achieved, which makes suitable applications associated broadband...
Carrier‐selective passivating contacts play a crucial role in highly efficient silicon solar cells targeting the cost‐effective photovoltaic industry. Widely developed hole‐selective passivating‐contact molybdenum oxide (MoO x ) exhibits inferior long‐term stability induced by chemical reactions between MoO and adjacent metals. Herein, low‐temperature magnetron‐sputtering‐deposited nitride (MoN films are as stable for crystal cells. The work function of MoN can be deep 5.62 eV featuring low...
Abstract Passivating contacts consisting of doped polycrystalline silicon (poly‐Si) on a thin tunnel‐oxide enable excellent operating voltages for crystalline solar cells. However, hole‐collecting based boron‐doped poly‐Si do not yet reach their full surface‐passivation potential, likely due to boron diffusion during annealing. In this work, the authors show how insertion intrinsic buffer layer between oxide and is effective in improving contact passivation. By tailoring microstructure...
Abstract Separating photogenerated charge carriers by carrier‐selective heterostructure contacts rather than doped homojunctions is a promising pathway to approach the theoretical power conversion efficiency (PCE) limit of crystalline silicon (c‐Si) solar cells. An electron‐selective, hole‐blocking lithium contact for c‐Si cells presented simple thermal evaporation air‐stable Li 3 N powder. It found that this introduces only minimal Schottky‐barrier height electron transport at its interface...
In this work，α-Al2O3：C crystal was grown by temperature gradient technique using α-Al2O3 and graphite powder as raw materials， the thermoluminescence (TL) optically stimulated luminescence (OSL) of were investigated Ris TL/OSL-DA-15. The as-grown α-Al2O3：C shows a single TL peak at 462K blue emission 410nm. intensity increases irradiation dose increases， but no shift is found in position glow peak. OSL decay curve consists two components， namely fast component slow component. With...
Molybdenum nitride (MoNx) was perceived as carrier-selective contacts (CSCs) for crystalline silicon (c-Si) solar cells due to having proper work functions and excellent conductivities. However, the poor passivation non-Ohmic contact at c-Si/MoNx interface endow an inferior hole selectivity. Here, surface, interface, bulk structures of MoNx films are systematically investigated by X-ray scattering, surface spectroscopy, electron microscope analysis reveal features. Surface layers with...
In this work, Ce:YAG crystal and transparent ceramics were prepared by the temperature gradient technique （TGT） sintering in vacuum， respectively. The optical scintillation properties of as-prepared investigated compared. Both show typical Ce3+ absorption bands at 230，340 460 nm a 540 emission peak. However, color center 296 370 with an peak 398 also observed TGT crystal. X-ray fluorescence spectra 520 nm, but another 300 was found which can be attributed to YAl antisite defects. An average...
The peak power of a battery is vital feature for electric vehicles to maximize efficiency and ensure the safe operation system. Currently, estimation prediction state-of-power are based either on precise model algorithms or large amount test data. However, these methods will lead conservative measurements. In this study, 11 Ah LiFePO4 cells selected as research object, new experimental procedure proposed, which mainly constant charge/discharge modes. Moreover, conception sensitivity make...