A5001253680- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Perovskite Materials and Applications
- Solid-state spectroscopy and crystallography
- Luminescence Properties of Advanced Materials
- Semiconductor materials and interfaces
Shandong University
2023
Abstract Indium consumption is the roadblock for terawatt‐scale silicon heterojunction (SHJ) solar cells. Here, we report that M6 wafer scale SHJ cells reached an efficiency of 24.94% using room temperature DC sputtering deposited ZnO:Al (AZO) transparent electrode. Compared with indium tin oxide (ITO) standard cells, interfacial contact and smaller bandgap are observed to be main factors limit AZO cell performance. By introducing a transition metal doped (IMO) layer, significantly higher...
Abstract Parasitic absorption in the front window layers of transparent conductive oxide (TCO) films and carrier selective collection optical shading losses from metallic finger grid mainly limit current generation silicon heterojunction (SHJ) solar cells. In this work, we demonstrate an improved short‐circuit density ( J sc ) 40.24 mA/cm 2 through a combination novel composed transition metal doped indium (IMO) hydrogenated nanocrystalline (nc‐SiO x :H) Cu plating for SHJ By introducing...
This study explores the use of Cu dopant to improve optoelectronic properties and stability CsPbX3 perovskites for blue-light-emitting diode material. The addition causes metal octahedron orthorhombic CsPbBr3 shrink, which relaxes lattice strain from distortion twisting [PbX6] reduces energy Jahn–Teller effects. A crystal orbital Hamilton population (COHP) analysis reveals that Cu-Br bond in [CuX6] has a higher integrated projected COHP (IpCOHP), strong hybridization between Cu-3d Br-4p...