A5009790423- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Photovoltaic System Optimization Techniques
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- Thermal properties of materials
- Microfluidic and Bio-sensing Technologies
- solar cell performance optimization
- Mechanical and Optical Resonators
- Laser-induced spectroscopy and plasma
- Electron and X-Ray Spectroscopy Techniques
- Glass properties and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Phase-change materials and chalcogenides
Shanghai Institute of Microsystem and Information Technology
2021-2024
Chinese Academy of Sciences
2021-2024
ShanghaiTech University
2021-2024
University of Chinese Academy of Sciences
2021-2023
National Taiwan University
1991
Volatile solids with symmetric π-backbone are intensively implemented on manipulating the nanomorphology for improving operability and stability of organic solar cells. However, due to isotropic stacking, announced geometry cannot modify microscopic phase separation component distribution collaboratively, which will constrain promotion exciton splitting charge collection efficiency. Inspired by superiorities asymmetric configuration, a novel process-aid solid (PAS) engineering is proposed....
Flexible solar cells have a lot of market potential for application in photovoltaics integrated into buildings and wearable electronics because they are lightweight, shockproof self-powered. Silicon been successfully used large power plants. However, despite the efforts made more than 50 years, there has no notable progress development flexible silicon their rigidity1-4. Here we provide strategy fabricating large-scale, foldable wafers manufacturing cells. A textured crystalline wafer always...
Abstract Recent achievements in amorphous/crystalline silicon heterojunction (SHJ) solar cells and perovskite/SHJ tandem place hydrogenated amorphous (a-Si:H) at the forefront of photovoltaics. Due to extremely low effective doping efficiency trivalent boron tetravalent silicon, light harvesting aforementioned devices is limited by their fill factors (FFs), a direct metric charge carrier transport. It challenging but crucial develop highly conductive doped a-Si:H with minimal FF losses. Here...
Abstract Silicon‐based photovoltaic (PV) modules suffer from potential‐induced degradation (PID) caused by sodium (Na) permeation, which is present in large quantities soda‐lime glass. Here, we report that Na atoms can decrease the performance of amorphous/crystalline silicon heterojunction (SHJ) solar cells without help a voltage bias. The three stages are investigated this work. First, H 2 O molecules open channels for transport transparent conductive oxide (TCO), while device remains...
To decrease the series resistance in front gallium‐doped zinc oxide (GZO) silicon heterojunction (SHJ) solar cells caused by high‐resistivity GZO films, stack films including tungsten‐doped indium (IWO) which have better lateral transport properties are used as transparent conductive (TCO) to improve charge transport. The crystal structure and electrical optical characteristics of GZO/IWO stacks with different thickness ratios investigated, current–voltage performance SHJ rear film analyzed....
We demonstrate that the key element for a thermally activated process to follow stretched-exponential relaxation and Meyer-Neldel rule is exponential energy distribution of defect traps. point out characteristic temperature associated with obtained from should have same value. This criterion provides very good test underlying mechanism as proposed. The model applied data in semi-insulating GaAs. show decay persistent photoconductivity studied material after different illumination time...
Photons of varying wavelengths exert substantial effects on silicon heterojunction (SHJ) solar cells. Collaborative research previously establishes that light soaking with long‐wavelength photons can activate boron doping in hydrogenated amorphous (a‐Si:H), thereby augmenting cell efficiency (Eff). Herein, this investigation is extended, exploring the short‐wavelength a‐Si:H layers, SHJ cells, and modules. The ultraviolet A (UVA) peak 365 nm disrupt Si–H bonds, resulting a notable reduction...
Silicon Solar Cells In article number 2300334, Ye and co-workers explore the effects of short-wavelength photons on hydrogenated amorphous silicon (a-Si:H) layers, heterojunction solar cells, modules. Device performance is affected by reduced hydrogen concentration intrinsic doped a-Si:H films. UV-induced loss can be mitigated through light soaking or use UV band cut-off encapsulants.
Abstract Silicon heterojunction (SHJ) solar cells are usually considered to be a good choice for power plants owing their high power-conversion efficiency. A recent work reports light soaking can activate boron doping in hydrogenated amorphous silicon (a-Si:H), improving the efficiency of SHJ cells. Here we further show intensity boost dark conductivity phosphorus-doped a-Si:H and boron-doped a-Si:H, this has significant implications, i.e., panels generate more than expected, especially...
Abstract Carrier‐selective contact is a fundamental issue for solar cells. For silicon heterojunction (SHJ) cells, it important to improve hole transport because of the low doping efficiency boron in amorphous and barrier stemming from valence band offset. Here, we develop carbon dioxide (CO 2 ) plasma treatment (PT) process form dipoles defect states. We find dipole moment caused by longitudinal distribution H O atoms. It improves blocks electron thus suppresses carrier recombination. In...
P-type hydrogenated nanocrystalline silicon (nc-Si:H) has been used as a hole-selective layer for efficient n-type crystalline heterojunction (SHJ) solar cells. However, the presence of an additional valence band offset at interface between intrinsic amorphous and p-type nc-Si:H films will limit hole carrier transportation. In this work, it found that when heavily boron-doped oxide deposited with high hydrogen dilution to silane (pB) was inserted into their interface, fill factor SHJ cells...
The time dependence of optically induced degradation in hydrogenated amorphous silicon (a-Si:H) has been measured at various temperatures. It is found that the follows stretched-exponential law with stretching parameter \ensuremath{\beta} and relaxation constant \ensuremath{\tau} independent sample temperature. This result explained by fact defects an solid are distributed exponentially energy absorbed photon transfers its into a local mode defect to raise temperature value...
The Schottky barrier is a fundamental issue when an n‐type transparent conductive oxide (TCO) contacted with p‐type hydrogenated amorphous silicon (p‐a‐Si:H) in heterojunction (SHJ) solar cells. Herein, it found that the hydrogen (H) atoms p‐a‐Si:H diffuse into tungsten‐doped indium (IWO) during annealing, which improves electric properties of both IWO films and p‐a‐Si:H/IWO interface. H diffusion reduces surface work function p‐a‐Si:H, thus between IWO. Consequently, hole transport SHJ...
Hydrogenated nanocrystalline silicon (nc‐Si:H) or hydrogenated oxide (nc‐SiO x :H) as window layers have ample potential to improve the short‐circuit current density ( J SC ) of heterojunction (SHJ) solar cells due their wide optical bandgap. However, growth nanocrystals within a 20 nm‐thickness on intrinsic amorphous i ‐a‐Si:H) poses challenge. Plasma treatment (PT) after ‐a‐Si:H deposition is usually used passivation performance. Herein, / p interface subjected CO 2 PT: s post PT proven be...
Great achievements in last five years, such as record-efficient amorphous/crystalline silicon heterojunction (SHJ) solar cells and cutting-edge perovskite/SHJ tandem cells, place hydrogenated amorphous (a-Si:H) at the forefront of emerging photovoltaics. Due to extremely low doping efficiency trivalent boron (B) tetravalent silicon, light harvesting aforementioned devices are limited by their fill factors (FF), which is a direct metric charge carrier transport. It challenging but crucial...