Yanling Yin

ORCID: 0000-0002-8095-6541
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Research Areas
  • Transition Metal Oxide Nanomaterials
  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Chalcogenide Semiconductor Thin Films
  • Gas Sensing Nanomaterials and Sensors
  • Quantum Dots Synthesis And Properties
  • Advancements in Battery Materials
  • Nanowire Synthesis and Applications
  • Advanced battery technologies research
  • ZnO doping and properties
  • Copper-based nanomaterials and applications
  • Advanced Photocatalysis Techniques
  • Neuroscience and Neural Engineering
  • MXene and MAX Phase Materials
  • TiO2 Photocatalysis and Solar Cells
  • Conducting polymers and applications
  • Advanced Semiconductor Detectors and Materials
  • Advanced Condensed Matter Physics
  • Semiconductor materials and devices
  • Optical properties and cooling technologies in crystalline materials
  • Topological Materials and Phenomena
  • Photonic and Optical Devices
  • Ferroelectric and Negative Capacitance Devices
  • Electronic and Structural Properties of Oxides

Hunan Normal University
2015-2024

Changsha Normal University
2023

Changsha University
2015-2020

State Council of the People's Republic of China
2020

Henan University
2016

CsPbX3 perovskites have attracted tremendous attention recently due to their excellent optical properties and potential applications. However, this seemingly counterintuitive fact that can act as both extraordinary photovoltaic materials superior emission mediums has not yet been well understood. In work, the absorption spectrum, temperature-dependent Raman spectra, temperature- excitation power-dependent steady-state micro-photoluminescence along with lifetime dynamics were used...

10.1021/acs.jpcc.9b06643 article EN The Journal of Physical Chemistry C 2019-09-18

Low-voltage electric double layer p-type thin film transistors (TFTs) were fabricated on glass substrates with copper iodide doped potassium (Cu0.95K0.05Ix) as the channel and chitosan dielectric. Cu0.95K0.05Ix TFTs exhibited Ion/Ioff ratio of 2.5 × 104, subthreshold swing 30 mV/dec, threshold voltage 1.34 V, operating 2 saturation field-effect mobility 16.6 cm2 V−1 s−1. The relaxation phenomenon induced by ion migration was effectively utilized, enabling to simulate various synaptic...

10.1063/5.0182472 article EN Applied Physics Letters 2024-01-15

Near-infrared photodetectors with polarization-sensitive capabilities have garnered significant attention in modern optoelectronic devices. SbSeI, one of the quasi-1D ternary V–VI–VII compounds, exhibits enormous advantages near-infrared polarization detection due to its suitable bandgap and pronounced anisotropy. Here, SbSeI nanowires were obtained by a mechanical exfoliation method from bulk crystals, photoelectric properties anisotropy systematically investigated. The as-fabricated...

10.1063/5.0191682 article EN Applied Physics Letters 2024-03-04

High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD TEM used to examine the morphology, composition, phase structure crystallinity of as-prepared samples. Raman spectrum was confirm tin doped into effectively. The effect impurity on photoresponse properties photodetectors made from these pure under excitation light with different wavelength investigated. Various photoconductive parameters such as responsivity,...

10.1063/1.4897521 article EN cc-by AIP Advances 2014-10-06

The monoclinic m-MoO2 shows strong in-plane anisotropy that is essential to design anisotropic nanodevices. However, there not yet detailed study on the of nanostructures. Here, Raman spectra and electrical conductivity single-crystal nanosheets were investigated systematically for first time. Angle-resolved polarized spectroscopy (ARPRS) distinct dependence excitation laser wavelength sample thickness, demonstrating robust wavelength-dependent optical absorption,...

10.1021/acs.jpclett.9b00455 article EN The Journal of Physical Chemistry Letters 2019-03-29

Tungsten trioxide (WO3) is always oxygen-deficient or non-stoichiometric under atmospheric conditions. Positively charged oxygen vacancies prefer to drift as well electrons when the electric field strong enough, which will alter distribution of and then endow WO3 with memristive properties. In Au/WO3 nanowire/Au sandwich structures two ohmic contacts, axial electrical transport properties can be more easily modulated by bias voltage. The threshold for vacancy drifting in single-crystal...

10.1186/1556-276x-8-50 article EN cc-by Nanoscale Research Letters 2013-01-24

Converting solar energy into sustainable hydrogen fuel by photoelectrochemical (PEC) water splitting is a promising technology to solve increasingly serious global supply and environmental issues. However, the PEC performance based on TiO2 nanomaterials hindered limited sunlight-harvesting ability its high recombination rate of photogenerated charge carriers. In this work, layered SnS2 absorbers CoOx nanoparticles decorated two-dimensional (2D) nanosheet array photoelectrode have been...

10.1186/s11671-019-3168-7 article EN cc-by Nanoscale Research Letters 2019-11-11

An optoelectronic diode based on a <italic>p</italic>–<italic>n</italic> junction is one of the most fundamental device building blocks with extensive applications.

10.1039/c5ra05434f article EN RSC Advances 2015-01-01

In this article, NaxCu1−xI thin-film transistors gated by chitosan for low-voltage operation have been created doping CuI with different Na concentrations (x = 0, 0.05, 0.1). It is found that the devices exhibit optimal performance when x 0.05: a large current on/off ratio of 1.62 × 105, steep subthreshold slope 17.72 mV/dec, saturation field-effect mobility 0.51 cm2/V s, and threshold voltage 1.10 V. The operating reduced to below 2 V due electric-double-layer (EDL) effect. At frequency 10...

10.1063/5.0186892 article EN Applied Physics Letters 2024-03-18

Abstract In a two-terminal Au/hexagonal WO 3 nanowire/Au device, ions drifting or carriers self-trapping under external electrical field will modulate the Schottky barriers between nanowire and electrodes, then result in memristive effect. When there are water molecules adsorbed on surface of nanowire, hydrogen generate near positively-charged electrode transport condensed film, which enhance performance characterized by analogic resistive switching remarkably. bias voltage is swept...

10.1038/srep32712 article EN cc-by Scientific Reports 2016-09-07

Layered two-dimensional (2D) gallium monochalcogenide (GaX, X = S, Se, Te) semiconductor crystals hold great promise for potential electronics and photonics application.

10.1039/c6ra09239j article EN RSC Advances 2016-01-01

Photoelectrochemical (PEC) water splitting using semiconductors has become a promising strategy for clean and environmentally friendly solar fuel production. However, the efficiency of PEC is limited by narrow optical absorption range, serious recombination photogenerated charges low quantum semiconductors. Here we constructed plasmonic photoelectrode depositing Au nanoparticles (NPs) nanorods (NRs) on surface three-dimensional (3D) branched TiO2 nanorod arrays. Experimental data indicate...

10.1149/1945-7111/ab6a7c article EN Journal of The Electrochemical Society 2020-01-23

The optical confinement and strong carrier coupling within a semiconductor nanostructure cavity are crucial for the modulation of emission properties. Fundamental understanding light-matter interaction in low dimensional system is important. In this paper, we synthesized high-quality hexagonal Te-doped CdS nanowires by two-step chemical vapor deposition investigated systematically doping concentration, temperature, excitation power, wavelength dependent Raman, photoluminescence lifetime...

10.1088/1361-6528/aadf64 article EN Nanotechnology 2018-09-06

Optoelectronic diode based on PN heterostructure is one of the most fundamental device building blocks with extensive applications. Here we reported fabrication and optoelectronic properties GaTe/Sn : CdS nanoflake/nanowire heterojunction photodetectors. With high quality contacts between metal electrodes Sn or GaTe, electrical measurement hybrid under dark condition demonstrates an excellent characteristic well-defined current rectification behavior. The photocurrent increases drastically...

10.1088/0957-4484/25/44/445202 article EN Nanotechnology 2014-10-14

Negative photoconductivity effect has been observed in the Au/WO3 nanowire/Au devices a high humidity environment, which might be attributed to accumulation of H+ ions on surface WO3 nanowire. Under illumination with violet light (445 nm), photo-excited holes can oxidize adsorbed H2O molecules produce and O2, while electrons at conduction band bottom do not have enough energy reduce ions. These will accumulate hexagonalWO3 They capture mobile then concentration carriers, result significant...

10.1186/s11671-019-2978-y article EN cc-by Nanoscale Research Letters 2019-04-24

In the two-terminal Au/WO3 nanowire/Au electronic device with two Schottky barriers, drifting of oxygen vacancies under strong electric field induced by bias voltage applied at short distance will result in effective width reverse biased barrier decreasing,and then memristive effect or resistive switching phenomenon. By unidirectional sweeping, Au/WO3Schottky contact can be turned gradually and reversibly into Ohmic contact, reconfigured from non-rectifying state to either a forward rectifying state.

10.1063/1.4804067 article EN cc-by AIP Advances 2013-04-01

In this article, SnxCu1−xI thin-film transistors were fabricated on a glass substrate, with CuI doped varying concentrations of SnI2 serving as the channel and chitosan dielectric. When x = 0.06, device exhibited optimal performance: current on/off ratio 2.56 × 105, subthreshold slope 31.67 mV/dec, threshold voltage 1.33 V, saturated field-effect mobility 21.75 cm2 V−1 s−1. Due to electric double layer effect chitosan, operating devices was reduced below 2 V. Simulations also conducted...

10.1063/5.0217175 article EN Applied Physics Letters 2024-07-29

The electrical transport properties of Au/WO3 nanowire/Au sandwich structures were studied under different levels relative humidity at room temperature. Experimental results indicate that the memristive performance is enhanced remarkably when above a critical level, which might be attributed to H+ drifting based on Grotthuss mechanism. (produced by oxidizing water molecules with holes) in not only changes barrier heights but also an increase current. structures, whose can modulated gas...

10.1088/2053-1591/1/2/025025 article EN Materials Research Express 2014-05-20

Topological Kondo insulator samarium hexaboride (SmB6) nanowires, with diameters of 60–150 nm and lengths up to 1–5 μm, were successfully synthesized in large scale by chemical vapor deposition using BCl3 SmCl3 as precursors at 1070 °C. Transmission electron microscopy observation selected area diffraction analysis indicate that SmB6 nanowires are single-crystalline grow a preferred direction [1 0 0]. It also indicates the growth might be governed vapor–solid mechanism. Conventional...

10.1088/0022-3727/49/26/265302 article EN Journal of Physics D Applied Physics 2016-05-26

We have characterized the electrical transport properties of Au/WO3 nanowire/Au devices in ambient air and gaseous H2S to investigate adsorption kinetics molecules on surface WO3 nanowire at room temperature. The exhibit increasing linear conductance hysteresis H2S. Furthermore, contact type between Au electrode can be converted from original ohmic/Schottky Schottky/ohmic after being exposed These results suggest that adsorbed are oxidized by holes form hydrogen ions S atoms, which will...

10.1063/1.4898127 article EN Journal of Applied Physics 2014-10-27

Infrared photodetectors have attracted great interest due to their wide range of applications. (TaSe4)2I nanowires were prepared by the scotch-tape mechanical exfoliation method, and optoelectronic properties are systematically investigated. The photodetector shows superior performance under leading role photo-bolometric effect. Remarkably, prefabricated recorded a responsivity 0.792 A W−1 high external quantum efficiency 100.259% condition near-infrared light. These excellent suggest that...

10.1063/5.0064641 article EN Applied Physics Letters 2021-11-15
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