A5049083364- Thin-Film Transistor Technologies
- ZnO doping and properties
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Nanowire Synthesis and Applications
- Supercapacitor Materials and Fabrication
- Advancements in Semiconductor Devices and Circuit Design
- Neuroscience and Neural Engineering
- Conducting polymers and applications
- Advanced Sensor and Energy Harvesting Materials
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Advancements in Battery Materials
- Analytical Chemistry and Sensors
- Multilevel Inverters and Converters
- Advanced Chemical Sensor Technologies
- Advanced battery technologies research
- Ferroelectric and Piezoelectric Materials
- Neural Networks and Reservoir Computing
- Diamond and Carbon-based Materials Research
- Near-Field Optical Microscopy
- Transition Metal Oxide Nanomaterials
- Neural dynamics and brain function
- Dielectric materials and actuators
Hunan Normal University
2019-2024
Changsha Normal University
2024
Lanzhou University
2013-2022
Hunan University
2010-2021
State Council of the People's Republic of China
2015-2020
Changsha University
2019
Lanzhou City University
2015
Ningbo Institute of Industrial Technology
2010-2013
Chinese Academy of Sciences
2010-2013
State Key Laboratory of Chemobiosensing and Chemometrics
2010
Ti3C2Tx MXene, with high conductivity and flexibility, has drawn great attention in the wearable energy storage devices. However, easy nanoflake-restacking phenomenon greatly restricts achievable electrochemical performance of Ti3C2Tx-based supercapacitors, particular volumetric capacitance. Herein, we report a flexible hybrid paper consisting Fe2O3 nanoparticles (NPs) anchored on (Fe2O3 NPs@MX) via electrostatic self-assembly annealing treatments. The interlayer spacing nanoflakes is...
High performance nanogenerators (NGs) are critically important for energy harvesting and powering micro/nano-devices. Environmentally friendly nanowires (NWs) with high piezoelectric coefficients highly desirable enhancing NGs' expanding their applications. In this paper, we synthesized a new kind of lead-free 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BZT–BCT) NWs through the electrospinning method subsequent calcining process. Their crystal structure formation mechanism were systematically...
Globally, bladder cancer (BLC) is one of the most common cancers and has a high recurrence mortality rate. Current clinical diagnostic approaches are either invasive or inaccurate. Here, we report on cost-efficient, artificially intelligent chemiresistive sensor array made polyaniline (PANI) derivatives that can noninvasively diagnose BLC at an early stage maintain postoperative surveillance through ″smelling″ urine samples room temperature. In trials, 18 healthy controls 76 patients (60 16...
Abstract Multifunctional flexible sensors that are sensitive to different physical and chemical stimuli but remain unaffected by any mechanical deformation and/or changes still present a challenge in the implementation of devices real‐world conditions. This is greatly intensified need for an eco‐friendly fabrication technique suitable mass production. A new scalable approach reported obtaining thin transparent multifunctional with regulated electrical conductivity tunable band‐gap. (≈190 nm...
Low-voltage electric double layer p-type thin film transistors (TFTs) were fabricated on glass substrates with copper iodide doped potassium (Cu0.95K0.05Ix) as the channel and chitosan dielectric. Cu0.95K0.05Ix TFTs exhibited Ion/Ioff ratio of 2.5 × 104, subthreshold swing 30 mV/dec, threshold voltage 1.34 V, operating 2 saturation field-effect mobility 16.6 cm2 V−1 s−1. The relaxation phenomenon induced by ion migration was effectively utilized, enabling to simulate various synaptic...
Flexible organic/inorganic hybrid and proton/electron coupled neuron transistors are self-assembled on paper substrates at room temperature. Solution-processed chitosan-based proton conductor gate dielectrics show a high electric-double-layer specific capacitance, which is favorable for low voltage portable application. High performance logic operations realized such flexible depending the operation modes, i.e., "OR" enhancement-mode device "AND" depletion-mode device. Proton/electron...
Neurons are the basic units of human brain that receive and process external stimuli. The synapse is a vital part connection between neurons. Short‐term plasticity (STP) allows synapses to perform neural signal processing computation. Herein, low‐voltage (1 V) electrical‐double‐layer (EDL) p‐channel CuI neuromorphic transistors fabricated by simple solution method mimic this type synaptic function, chitosan used as gate dielectric. It exhibits short‐term memory functions similar biological...
Low-voltage electric-double-layer (EDL) p-channel Mg-doped CuI thin-film-transistors (TFTs) have been fabricated on glass substrates at low temperatures. Electrical properties of the solution-processed TFTs with different Mg doping concentrations were investigated. It is observed that compared to undoped and Mg0.1Cu0.9Ix TFTs, Mg0.05Cu0.95Ix exhibit an excellent current on/off ratio 1.1 × 105, a steep subthreshold swing 21.78 mV/dec, higher saturation field-effect mobility 0.95 cm2 V−1 s−1,...
Oxide-based thin-film transistors (TFTs) with in-plane gate structure are self-assembled on paper substrates at room temperature by using only one nickel shadow mask. Indium-tin-oxide (ITO) channel and ITO electrodes (gate, source, drain) can be deposited simultaneously without precise photolithography alignment process. The equivalent field-effect mobility, subthreshold swing, on/off ratio of such TFTs estimated to 22.4 cm2/V s, 192 mV/decade, 8×105, respectively. A model based two...
Low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors (TFTs) are self-assembled on SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large specific capacitance (5.8 μF/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) due to the electric-double-layer effect. The subthreshold swing,...
Ag nanoparticle doped Ni(OH)<sub>2</sub>nanosheets are deposited on flexible 3D graphene by a facile hydrothermal method. The electrode shows high specific capacitance with an increase of ~23% and excellent rate capability. also has good cycle stability.
Self-powered photodetectors have attracted the extensive attention in past years. Herein, we synthesized lateral CsPbBr 3 /CsPbI perovskite heterosrtucture nanoplates using anti-solvent solution method and fabricated self-powered by transfer Au-Au electrodes onto surface of single nanoplate. Under zero bias, this photodetector showed a reversible switching behavior under turn on/off illumination light with responsivity up to 0.887 mA W −1 external quantum efficiency 0.247%, benefiting from...
In this article, NaxCu1−xI thin-film transistors gated by chitosan for low-voltage operation have been created doping CuI with different Na concentrations (x = 0, 0.05, 0.1). It is found that the devices exhibit optimal performance when x 0.05: a large current on/off ratio of 1.62 × 105, steep subthreshold slope 17.72 mV/dec, saturation field-effect mobility 0.51 cm2/V s, and threshold voltage 1.10 V. The operating reduced to below 2 V due electric-double-layer (EDL) effect. At frequency 10...
Junctionless transparent electric-double-layer thin-film transistors with an in-plane-gate figure are fabricated on glass substrates at room temperature. The unique feature of such junctionless is that the channel and source/drain electrodes same thin indium-tin-oxide film without any junction. Effective field-effect modulation drain current can be obtained when thickness reduced to 20 nm. Such exhibit a good electrical performance small subthreshold swing (&lt;0.2 V/decade), high...
In this article, copper iodide (CuI) is used as the channel layer in thin-film transistors (TFTs) for first time to realize NAND logic function. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vphantom {_{\int }}$ </tex-math></inline-formula> TFTs are optimized by 80 °C annealing and have an ON/ OFF current ratio of notation="LaTeX">$2.7\times10$ 2 a field-effect mobility 0.18 cm2 notation="LaTeX">$\cdot...
Herein, junctionless thin‐film transistors (TFT) with indium‐oxide (In 2 O 3 ) as the n‐channel active layer are prepared on transparent substrates by magnetron sputtering at room temperature. Chitosan an electric‐double‐layer (EDL) effect a gate dielectric enables device to achieve low‐voltage operation, thus reducing energy consumption. The maintains its performance in dark or illuminated conditions and has good mobility of 0.21 cm V −1 s , current on/off ratio 6.5 × 10 6 subthreshold...
Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO2 for both top and bottom dielectrics have been fabricated, were deposited by plasma-enhanced chemical vapor deposition (PECVD) at room temperature. The threshold voltage of such devices can be modulated from -0.13 to 0.5 V the (TG), which switches device depletion-mode enhancement-mode. High performance a current on/off ratio (∼2.1 × 106), subthreshold swing (76 mV per...
In this article, SnxCu1−xI thin-film transistors were fabricated on a glass substrate, with CuI doped varying concentrations of SnI2 serving as the channel and chitosan dielectric. When x = 0.06, device exhibited optimal performance: current on/off ratio 2.56 × 105, subthreshold slope 31.67 mV/dec, threshold voltage 1.33 V, saturated field-effect mobility 21.75 cm2 V−1 s−1. Due to electric double layer effect chitosan, operating devices was reduced below 2 V. Simulations also conducted...
Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The composed of bottom indium-tin-oxide floating gate and multiples in-plane control gates. gates, coupling the gate, “on” “off” transistor. Effective field-effect modulation drain current has been realized. AND logic is demonstrated on dual developed technology highly desirable in terms fabrication high performance low-cost.
Low-voltage oxide-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by stacked SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> electrolyte/chitosan proton-conductor hybrid dielectric have been fabricated on glass substrates at room temperature. Such EDL TFTs exhibit a saturation mobility (μ xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> ) of 7.8 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V...
Currently, photovoltaic (PV) grid inverters include two sorts, isolated type and non-isolated type. One of the main problems PV is common mode (CM) noise. This paper introduces a dual Buck inverter for purpose suppression CM current in inverter. Compared with traditional full bridge inverter, this topology has simple structure, high efficiency, reliability low current. analyzes its characteristics under both normal conditions dead band conditions. The simulation experiments are presented to...
Low-voltage electric-double-layer (EDL) thin-fllm transistors (TFTs) have been fabricated on paper substrates at room temperature. The devices operated in depletion mode, and the resistivity of Indium-Tin-Oxide (ITO) channel layer is measured to be 24 Ω · cm. An SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film deposited by plasma enhanced chemical-vapor deposition method used as buffer improve smoothness substrate. TFTs -covered...