A5038911453- 2D Materials and Applications
- Graphene research and applications
- Supramolecular Self-Assembly in Materials
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Nanocluster Synthesis and Applications
- Advanced Memory and Neural Computing
- Carbon and Quantum Dots Applications
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
Zhejiang University
2022-2024
Zhejiang University of Science and Technology
2024
State Key Laboratory of Silicon Materials
2022-2024
Abstract The demand for high‐performance X‐ray detectors leads to material innovation efficient photoelectric conversion and carrier transfer. However, current are often susceptible chemical irradiation instability, complex fabrication processes, hazardous components, difficult compatibility. Here, we investigate a two‐dimensional (2D) with relatively low atomic number, Ti 3 C 2 T x MXenes, single crystal silicon detection single‐pixel imaging (SPI). We fabricate MXene/Si detector...
Deep ultraviolet photodetectors play a critical role in applications such as ozone layer monitoring and missile alert systems. This work investigates the potential of graphene quantum dots to enhance deep light photodetection within graphene/Si heterojunction. The addition not only reduces Schottky barrier between Si but also enhances absorption ability by Si. As result, modified junction exhibited exceptional performance metrics, including notable responsivity 0.21 A/W, an impressive...
Brain neurons exhibit far more sophisticated and powerful information-processing capabilities than the simple integrators commonly modeled in neuromorphic computing. A biological neuron can fact efficiently perform Boolean algebra, including linear nonseparable operations. Traditional logic circuits require a dozen transistors combined as NOT, AND, OR gates to implement XOR. Lacking competency, artificial neural networks multilayered solutions exercise XOR operation. Here, it is shown that...
p-type silicon (p-Si)/macro-assembled graphene nanofilm (nMAG)/n-type (n-Si) heterojunction is utilized to fabricate near-infrared photodetector. Dual built-in electric fields were established in the same direction at p-Si/nMAG and nMAG/n-Si heterojunctions, providing an enhanced electron-hole separation ability. The p-Si/nMAG/n-Si device has realized responsivities of 90 mA/W 45 under 900 nm 1064 illumination room temperature corresponding external quantum efficiency (EQE) 11.8% 5.2%,...