- High-Energy Particle Collisions Research
- Particle physics theoretical and experimental studies
- Quantum Chromodynamics and Particle Interactions
- Particle Detector Development and Performance
- Nuclear reactor physics and engineering
- CCD and CMOS Imaging Sensors
- Radiation Detection and Scintillator Technologies
- Matrix Theory and Algorithms
- Asthma and respiratory diseases
- Allergic Rhinitis and Sensitization
- Experimental and Theoretical Physics Studies
- Dermatology and Skin Diseases
- Quantum Electrodynamics and Casimir Effect
- Omental and Epiploic Conditions
- Advanced Data Storage Technologies
- Advanced Mathematical Physics Problems
- Nonlinear Waves and Solitons
- Scientific Measurement and Uncertainty Evaluation
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Topics in Algebra
- Credit Risk and Financial Regulations
- Surface and Thin Film Phenomena
- VLSI and Analog Circuit Testing
- Algebraic and Geometric Analysis
- Mathematical and Theoretical Analysis
Istituto Nazionale di Fisica Nucleare, Sezione di Trieste
2023-2025
A. Alikhanyan National Laboratory
2023-2024
University of Trieste
2023-2024
Hôpital Edouard Herriot
2023
Hospices Civils de Lyon
2023
Universidade de São Paulo
1976
Instituto de Pesca
1973
Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas
1971
University of Padua
1969
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating feasibility of Tower Partners Semiconductor Co. 65 nm process for use in next generation vertex detectors. aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down 20–40 µm bent form truly cylindrical half barrels. Among first critical steps towards realisation this detector is validate sensor technology through extensive characterisation both laboratory...
This paper presents the design of a front-end circuit for monolithic active pixel sensors. The operates with sensor featuring small, low-capacitance (< 2 fF) collection electrode and is integrated in DPTS chip, proof-of-principle prototype 1.5 mm × including matrix 32 pixels pitch 15 μm. chip implemented 65 nm imaging technology from Tower Partners Semiconductor Co. foundry was developed framework EP-R&D program at CERN to explore this particle detection. has an area 42 μm <sup...
Expressing the generalised zeta function Sigma n omega n-s in terms of 'partition function' ne- alpha (n), authors show this paper why they obtain same answer for Casimir effect (in many physical situations) if use, alternatively, analytic continuation procedure or take first derivative above partition and make to 0+ with neglect all pole =O.
Superconvergent sum rules are written for the optical constants of nonmagnetic materials. First a generalization some results Altarelli et al. is attained by means Liu and Okubo technique. In particular, we have set inequalities. Second, new superconvergent obtained considering suitable powers constants. They characterized strong damping high frequencies rules. Sum involving higher electric conductivity also indicated.
Families of superconvergent relations for the normal reflectivity function are given. Sum rules connecting difference phases reflectivities two materials also considered. Finally superconvergence and sum magneto-reflectivity in Faraday Voigt regimes studied.
Superconvergent sum rules are written for the Voigt effect isotropic nonmagnetic materials.
Infinite sets of sum rules are written for the difference between complex conductivities in superconducting and normal states.Received 4 August 1975DOI:https://doi.org/10.1103/PhysRevB.13.1357©1976 American Physical Society
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process optimise sensor for next generation of Monolithic Active Pixels Sensors high-energy physics. technology explored in several variants which differed by: doping levels, pixel geometries pitches (10-25 $\mu$m). These have been tested following exposure varying levels irradiation up 3 MGy $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here...
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating feasibility of Tower Partners Semiconductor Co. 65 nm process for use in next generation vertex detectors. aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down 20 40 um bent form truly cylindrical half barrels. Among first critical steps towards realisation this detector is validate sensor technology through extensive characterisation both...