Sara Ruiz Daza

ORCID: 0009-0007-7599-1194
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About
Contact & Profiles
Research Areas
  • Particle Detector Development and Performance
  • CCD and CMOS Imaging Sensors
  • Radiation Detection and Scintillator Technologies
  • Superconducting Materials and Applications
  • Medical Imaging Techniques and Applications
  • Distributed and Parallel Computing Systems
  • Particle physics theoretical and experimental studies
  • Electron and X-Ray Spectroscopy Techniques
  • Nuclear Physics and Applications
  • Atomic and Subatomic Physics Research
  • Advanced Electrical Measurement Techniques
  • Advanced Electron Microscopy Techniques and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • High-Energy Particle Collisions Research
  • Energy Load and Power Forecasting
  • Control Systems and Identification
  • Advanced X-ray and CT Imaging
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • Particle Accelerators and Free-Electron Lasers
  • Advanced MRI Techniques and Applications
  • Fault Detection and Control Systems
  • Electromagnetic Compatibility and Measurements
  • Non-Destructive Testing Techniques

Deutsches Elektronen-Synchrotron DESY
2022-2024

University of Bonn
2022-2024

10.1016/j.nima.2024.169896 article EN cc-by Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 2024-09-01

The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared processes with larger feature sizes. To explore this novel technology, Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. design followed digital-on-top workflow ports hybrid pixel-detector architecture, digital pulse processing each pixel, into chip. matrix consists of...

10.48550/arxiv.2502.06573 preprint EN arXiv (Cornell University) 2025-02-10

The goal of the TANGERINE project is to develop next generation monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers higher logic density and overall lower power consumption compared previously used processes. A combination Technology Computer-Aided Design (TCAD) Monte Carlo (MC) simulations understand physical processes within sensing element thus performance detector. response sensors can then be tested in laboratory test beam facilities simulation results....

10.48550/arxiv.2502.06675 preprint EN arXiv (Cornell University) 2025-02-10

Abstract The silicon tracker of the ATLAS experiment will be upgraded for upcoming High-Luminosity Upgrade LHC. main building blocks new strip are modules that consist sensors and hybrid PCBs hosting read-out ASICs. mounted on rigid carbon-fiber substructures, known as staves in central barrel region petals end-cap regions, provide common services to all modules. At end each stave or petal side, a so-called End-of-Substructure (EoS) card facilitates transfer data, power, control signals...

10.1088/1748-0221/20/02/c02020 article EN cc-by Journal of Instrumentation 2025-02-01

Abstract The ATLAS Strip Tracker for HL-LHC is composed of individual modules that contain silicon sensors and front-end electronics. These are then mounted onto carbon-fiber substructures, hosting up to 14 per side. At the end these an EoS card connects 28 data lines lpGBT ASICs VTRX+ module, which provide serialization 10 Gb/s optical transmission off-detector systems, respectively. powered by a dedicated Dual-Stage DC-DC converter. With project moving into production stage, this...

10.1088/1748-0221/19/02/c02067 article EN cc-by Journal of Instrumentation 2024-02-01

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications particle physics. The MAPS design has small collection electrode characterized by an input capacitance of ∼fF, granting high signal-to-noise ratio and low power consumption. Additionally, the brings reduction material budget improved logic density readout circuitry, compared to previously studied technologies. Given these features, this was chosen TANGERINE project...

10.1016/j.nima.2024.169414 article EN cc-by Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 2024-05-03

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications particle physics. The MAPS design has small collection electrode characterized by an input capacitance of ~fF, granting high signal-to-noise ratio and low power consumption. Additionally, the brings reduction material budget improved logic density readout circuitry, compared to previously studied technologies. Given these features, this was chosen TANGERINE project...

10.1016/j.nima.2024.169414 preprint EN arXiv (Cornell University) 2024-02-22

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process optimise sensor for next generation of Monolithic Active Pixels Sensors high-energy physics. technology explored in several variants which differed by: doping levels, pixel geometries pitches (10-25 $\mu$m). These have been tested following exposure varying levels irradiation up 3 MGy $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here...

10.48550/arxiv.2403.08952 preprint EN arXiv (Cornell University) 2024-03-13

The optimisation of the sensitive region CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination electrostatic field simulations Monte Carlo methods. This paper presents guiding principles such using pixel sensor small collection electrode high-resistivity epitaxial layer as an example. full simulation workflow is described, along possible pitfalls how to avoid them. For commercial processes, detailed doping profiles are...

10.48550/arxiv.2408.00027 preprint EN arXiv (Cornell University) 2024-07-31

The electronCT technique is an imaging method based on the multiple Coulomb scattering of relativistic electrons and has potential applications in medical industrial imaging. It utilizes a pencil beam very high energy electron (VHEE, 50-250 MeV) range single detection layer for determination profile. constitutes projectional, two-dimensional thus also qualifies tomographic reconstruction samples. Given simplicity technical setup its location behind sample, synergies with VHEE radiotherapy,...

10.48550/arxiv.2409.20091 preprint EN arXiv (Cornell University) 2024-09-30

The electronCT technique is an imaging method based on the multiple Coulomb scattering of relativistic electrons and has potential applications in medical industrial imaging. It utilizes a pencil beam very high energy electron (VHEE, 50–250 MeV) range single detection layer for determination profile. constitutes projectional, two-dimensional thus also qualifies tomographic reconstruction samples. Given simplicity technical setup its location behind sample, synergies with VHEE radiotherapy,...

10.3389/fphy.2024.1454854 article EN cc-by Frontiers in Physics 2024-11-05

Monolithic CMOS sensors in a 65nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments an application particle physics. The appeal of monolithic detectors lies fact that both sensor volume and readout electronics integrated same silicon wafer, providing reduction production effort, costs scattering material. Tangerine Project WP1 at DESY participates is focused development active pixel with time spatial resolution compatible...

10.1109/nss/mic44845.2022.10398964 article EN 2021 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) 2022-11-05

Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments an application particle physics. The appeal of monolithic detectors lies fact that both sensor volume and readout electronics integrated same silicon wafer, providing reduction production effort, costs scattering material. Tangerine Project WP1 at DESY participates is focused development active pixel with time spatial resolution compatible...

10.48550/arxiv.2303.18153 preprint EN cc-by arXiv (Cornell University) 2023-01-01

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities on-chip circuits and, for given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are cost-effective alternative hybrid sensors since flip-chip bonding is not required. In addition, they allow significant reductions the material budget detector systems, due smaller physical thicknesses active sensor and absence separate...

10.48550/arxiv.2210.09810 preprint EN cc-by-nc-nd arXiv (Cornell University) 2022-01-01

IFJ PAN PPSS Alumni Conference is organized by the Institute of Nuclear Physics Polish Academy Sciences (IFJ PAN). It addressed to: participants previous editions Particle Summer Student Programme, attendees current edition and students interested in cooperation with PAN. First was held on 9-10 July 2022, topic focused on, but not restricted to, high energy physics.

10.48733/978-83-63542-30-6 preprint EN arXiv (Cornell University) 2022-10-24
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