Morteza Aghaee
A5066220189- Semiconductor materials and devices
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Copper Interconnects and Reliability
- Topological Materials and Phenomena
- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Thermal properties of materials
- Quantum and electron transport phenomena
- Thin-Film Transistor Technologies
- Catalytic Processes in Materials Science
- Advanced Thermoelectric Materials and Devices
- Quantum Information and Cryptography
- Ga2O3 and related materials
- Surface Roughness and Optical Measurements
- Diamond and Carbon-based Materials Research
- Carbon Nanotubes in Composites
- Optical Coatings and Gratings
- Photonic and Optical Devices
- Quantum Computing Algorithms and Architecture
- High-Temperature Coating Behaviors
- Plasma Applications and Diagnostics
- Advanced Memory and Neural Computing
- Electrocatalysts for Energy Conversion
- Advancements in Solid Oxide Fuel Cells
Microsoft (United States)
2023-2025
Eindhoven University of Technology
2016-2019
Plasma (Macedonia)
2019
Holst Centre (Netherlands)
2019
Eurofins (Netherlands)
2019
Lappeenranta-Lahti University of Technology
2015
Babol Noshirvani University of Technology
2015
Topological phases of matter can enable highly stable qubits with small footprints, fast gate times, and digital control. These hardware-protected must be fabricated a material combination in which topological phase reliably induced. The challenge: disorder destroy the obscure its detection. This paper reports on devices low enough to pass gap protocol, thereby demonstrating gapped superconductivity paving way for new qubit.
Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) on Si(100). The use of O2 was found to have a significant improvement the growth rate and when compared former Ga2O3 processes. yielded second highest rates (1.5 Å per cycle) in terms ALD lowest date typical characteristics were determined. From situ quartz crystal...
ADVERTISEMENT RETURN TO ISSUEPREVCommunicationNEXTArea-Selective Atomic Layer Deposition of In2O3:H Using a μ-Plasma Printer for Local Area ActivationAlfredo Mameli*†, Yinghuan Kuang†, Morteza Aghaee†, Chaitanya K. Ande†, Bora Karasulu†, Mariadriana Creatore†, Adriaan J. M. Mackus†, Wilhelmus Kessels†, and Fred Roozeboom†‡View Author Information† Department Applied Physics, Eindhoven University Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands‡ Thin Film TNO, High Tech Campus 21,...
We describe a concrete device roadmap towards fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our encompasses four generations of devices: single-qubit that enables measurement-based qubit benchmarking protocol; two-qubit uses braiding to perform Clifford operations; an eight-qubit can be used show improvement operation when performed logical qubits rather than directly physical qubits; and topological array supporting...
Dielectric Barrier Discharges operating in CO and CO2 form solid products at atmospheric pressure. The main differences between both plasmas their deposits were analyzed, similar energy input. GC measurements revealed a mixture of CO2, CO, O2 the DBD exhaust, while no was found plasma. A coating nanoparticles composed Fe, O, C produced by discharge, whereas, microscopic dendrite-like carbon structure formed Fe3O4 Fe crystalline phases sample. deposition characterized as an amorphous...
Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a precursor and water, ozone, or oxygen plasma coreactants. Low temperatures (80–120 °C) used to grow moisture barrier TiO2 on polyethylene naphthalate. The maximum growth per cycle for processes 0.33, 0.12, 0.56 Å/cycle, respectively. X-ray photoelectron spectrometry was evaluate the chemical composition of layers origin carbon contamination studied deconvoluting C1s peaks. In...
Atomic/molecular layer deposited (ALD/MLD) inorganic-organic thin films form a novel class of materials with tunable properties. In selected cases, hybrid are reported to show environmental instability, specifically towards moisture. this article, we focus on zinc oxide/zincone multi-layers the theoretical formula (ZnO)a(Zn-O-C6H4-O)b. We by means ellipsometric porosimetry that micro-porosity in range 0.42 and 2 nm pristine zincone is responsible for its degradation. During degradation, it...
Abstract A microplasma printer is employed to deposit thin film patterns of TiO 2 by titanium tetra‐isopropoxide and N /O plasma at atmospheric pressure. The setup adopted carry out deposition in two configurations, namely under chemical vapor (CVD) atomic layer (ALD) modes. properties , as well the patterning resolution, are investigated. amorphous deposited CVD mode contains a relatively high level impurities (residual carbon content 5–10 at.%) characterized low refractive index 1.8. With...
Single layer antireflection coatings (SLAR) consisting of nanoporous silica (NP SiO 2 ) films are developed by selective chemical etching atomic deposited (ALD) Al O 3 :SiO composite films. The reflective index the final NP film is finely adjusted from 1.132 to 1.400 at 600 nm wavelength applying an appropriate ratio in composite. To meet requirements SLAR deep UV (DUV) near IR (NIR) spectral range, thickness controlled with nanometer precision ALD process. simultaneously applied on both...
A combinatorial approach to deposit gas barrier layers (GBLs) on polyethylene terephthalate (PET) by means of plasma‐enhanced chemical vapor deposition (PECVD) and atomic layer (PEALD) is presented. Thin films SiO x C y H z obtained from PECVD were grown either subsequently a PEALD seeding (SiO 2 ) or capped ultrathin Al O 3 . To study the impact overall GBL performance, coatings with high macro defect densities low efficiency regard oxygen transmission rate (OTR) chosen. demonstrated...
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only quantum computation. In superconductors, this amounts to determination the shared fermion parity Majorana zero modes. As step towards this, we implement single-shot interferometric measurement indium arsenide-aluminum heterostructures with gate-defined nanowire. interferometer formed by tunnel-coupling proximitized nanowire dots. causes state-dependent shift these dots' capacitance up 1 fF....
In this work, atomic-resolution transmission electron microscopy studies show that in atomic/molecular layer deposited ZnO-zincone [(ZnO)a(Zn-O-C6H4-O)b] multilayer thin films, ZnO crystals grow vertically and continuously through lateral zincone monolayers. When the thickness of is increased from one to few monolayers, growth becomes confined, leading formation discrete ZnO/zincone interfaces accompanied by a decrease roughness. Apart providing understanding on structure hybrid multilayers,...
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation topological superconductivity Majorana zero modes. The fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires defined by electrostatic gates. These enable local non-local transport properties have been optimized via extensive to ensure robustness against non-uniformity disorder. Our main result is several devices,...
In this paper, plasma‐enhanced chemical vapor deposited SiO 2 layers capped by an ultra‐thin plasma‐assisted atomic layer Al O 3 over‐layer are analyzed means of ellipsometric porosimetry (EP). a very recent contribution, we have shown that the combination two provided excellent intrinsic moisture permeation barrier performance down to 10 −5 –10 −6 g · day −1 m −2 regime. The present paper therefore addresses microstructural changes which undergo upon deposition, as monitored It was found...