A5014637331- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Transition Metal Oxide Nanomaterials
- Advanced Thermoelectric Materials and Devices
- Advanced Memory and Neural Computing
- Nonlinear Optical Materials Studies
- Quantum Dots Synthesis And Properties
- Thermal properties of materials
- Geophysical Methods and Applications
- COVID-19 diagnosis using AI
- Ultrasonics and Acoustic Wave Propagation
- Cardiac, Anesthesia and Surgical Outcomes
- Medical Malpractice and Liability Issues
- Artificial Intelligence in Healthcare and Education
- Gas Sensing Nanomaterials and Sensors
- Machine Learning in Healthcare
- Liquid Crystal Research Advancements
- Patient Safety and Medication Errors
- Semiconductor materials and devices
- Advanced Thermodynamics and Statistical Mechanics
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- Infrastructure Maintenance and Monitoring
Ningbo University
2018-2024
National Engineering Research Center of Electromagnetic Radiation Control Materials
2018-2023
Shenzhen University
2023
Zhejiang University
2023
First Affiliated Hospital Zhejiang University
2023
Leibniz Institute of Surface Engineering
2018
A single Sb phase demonstrates potential for use in change memory devices. However, the rapid crystallization of at room temperature imposes limitations on its practical application. To overcome this issue, is alloyed with Se using a reactive co-sputtering deposition technique, employing both and Sb2Se3 sputter targets. This process results formation Sb-rich thin films varying compositions. Compared to pure Sb, exhibit enhanced thermal stability due Sb–Se bonds reduced resistance drift. In...
Abstract Elderly patients are susceptible to postoperative infections with increased mortality. Analyzing a deep learning model, the perioperative factors that could predict and/or contribute may improve outcome in elderly. This was an observational cohort study 2014 elderly who had elective surgery from 28 hospitals China April June 2014. We aimed develop and validate learning-based predictive models for 1510 were randomly assigned be training dataset establishing models, 504 used...
We designed the phase-change memory (PCM) cell based on ultrathin GeTe film (∼10 nm) and homemade nanoscale electrode filling craft to improve data retention ability reduce programming energy, respectively. It was found that temperature for ten years’ of this is 160 ± 32.8 °C, which much higher than conventional Ge2Sb2Te5 (GST, 83 20.6 °C) film. Benefit nature fragile-to-strong crossover behavior in supercooled liquids confined a two-dimension structure, fast SET speed 6 ns also detected...
The Sb2Se3 and Ti-doped phase change thin films were prepared by magnetron sputtering. relationship between resistance drift crystallization behavior of thoroughly investigated. results revealed that when Ti-doping concentration reaches 5.4 at. %, Ti5.4(Sb2Se3)95.4 film exhibited a high thermal stability with temperature 225 °C 10-year data retention 129.5 °C. This benefits to lower coefficient from 0.067 for 0.002 Ti5.4(Sb2Se3)95.4. Further microstructural analysis the suppression large...
Zn1Sb7Te12 thin films have been deposited by magnetron co-sputtering of ZnTe and Sb2Te3 targets. The microstructure, phase-change speed, optical cycling stability, crystallization kinetics investigated during thermal annealing laser irradiation. thermal-annealed laser-irradiated give a clear evidence the coexistence trigonal cubic phases, which are homogeneously distributed in single alloy as confirmed advanced scanning transmission electron microscopy. formation both phases increases...
Typical nanocomposite heterogeneous ZnSb-Al2O3 and ZnSb-ZnO phase-change materials were prepared. A direct comparison of the distinct structures in amorphous, metastable, stable states between two different was investigated systematically. Upon heating, films show a two-step crystallization process with formation metastable orthorhombic ZnSb phase ahead trigonal phase, while could exhibit one-step when ZnO-doping concentration is more than 12.3 atom %. In case ZnSb-Al2O3, structural...
GeTe/Sb2Te3 heterostructure thin films with a period number of 10 were prepared by magnetron sputtering. The relationship between resistance drift and crystallization behavior the was systematically investigated. results show that exhibit high thermal stability temperature 195 °C an ultralow coefficient 0.001, even lower than single layer Ge2Sb2Te5 (0.067). chemical bonding occurs during thermal-induced element diffusion process, causing heterogeneous precipitation controllable...
With the growing need for extensive data storage, enhancing storage density of nonvolatile memory technologies presents a significant challenge commercial applications. This study explores use monatomic antimony (Sb) in multi-level phase-change leveraging its thickness-dependent crystallization behavior. We optimized nanoscale Sb films capped with 4-nm SiO2 layer, which exhibit excellent amorphous thermal stability. The temperature ranges from 165 to 245 °C as film thickness decreases 5 3...
Ge2Sb2Te5 (GST) films of 7 nm thickness in the multilayer structure [GST nm/W 6 nm]20 have been fabricated, and their crystallization kinetics is studied via ultrafast differential scanning calorimetry a generalized Mauro–Yue–Ellison–Gupta–Allan viscosity model. A distinct fragile-to-strong crossover (FSC) transition behavior, which beneficial to balance contradiction between good thermal stability nearby glass temperature Tg fast crystal speed around melting temperature, found this 2D...
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