A5005855706- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Topological Materials and Phenomena
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Graphene research and applications
- Copper-based nanomaterials and applications
- Organic Electronics and Photovoltaics
- Advanced Memory and Neural Computing
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Magnetic properties of thin films
- 2D Materials and Applications
- Conducting polymers and applications
- Physics of Superconductivity and Magnetism
- Photonic and Optical Devices
- Advanced Thermoelectric Materials and Devices
- Photorefractive and Nonlinear Optics
- GaN-based semiconductor devices and materials
- Ferroelectric and Negative Capacitance Devices
- Advanced Condensed Matter Physics
- Photovoltaic System Optimization Techniques
- Molecular Junctions and Nanostructures
- Luminescence Properties of Advanced Materials
Fuzhou University
2016-2025
Changzhou University
2016-2024
Xihua University
2021
State Council of the People's Republic of China
2021
Chengdu University
2021
Hebei University of Technology
2019-2021
Inner Mongolia University of Science and Technology
2020
Institute of Semiconductors
2010-2017
University of Chinese Academy of Sciences
2017
Tsinghua University
2016
The performance of the Cu_2ZnSnS_4 based solar cell is investigated using a simulation program called Solar Cell Capacitance Simulator (SCAPS). structure on (CZTS) compound semiconductor as absorber layer, ＂n＂-doped and un-doped (i) zinc oxide window In_2S_3 buffer layer.We study influence defect density, carrier thickness CZTS working temperature, layer its density performance. results illustrate that optimal from 2500 to 3000 nm for in range 20 30 layer. Besides, controlling under...
Abstract Semiconductor lasers hold significant promise for space laser communication. However, excessive radiation in can cause failures. In principle, quantum dot (QD) are more radiation‐resistant than traditional semiconductor because of their superior carrier confinement and smaller active regions. the multifaceted nature effects on QDs result ongoing controversies. this work, comprehensive tests under simulated conditions InAs/GaAs is conducted to validate performance. The results reveal...
Abstract The in-plane optical anisotropy (IPOA) of c-plane InGaN/GaN quantum disks (Qdisks) in nanowires grown on MoS 2 /Mo and Ti/Mo substrates is investigated using reflectance difference spectroscopy (RDS) at room temperature. A large IPOA related to defect or impurity states observed. samples approximately one order magnitude larger than that substrates. Numerical calculations based the envelope function approximation have been performed analyze origin IPOA. It found primarily results...
The spin splitting in GaN-based heterostructures has been investigated by means of circular photogalvanic effect experiments under uniaxial strain. ratios Rashba and Dresselhaus spin-orbit coupling coefficients (R/D ratios) have measured AlxGa1−xN/GaN with various Al compositions. It is found that the R/D ratio increases from 4.1 to 19.8 composition AlxGa1−xN barrier varied 15% 36%. coefficient bulk GaN experimentally obtained be 0.4 eV Å3. results indicate can modulated effectively...
Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on MSS and switching properties have been scarcely investigated. We demonstrated a stable four-state capability single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical attributed to electron trapping detrapping from oxygen vacancies (Vos). relates electrical-thermal induced distribution Vos which determines transport behavior show different resistance states....
Decreasing switching power of a memory cell to meet demands further downsizing is feasible with several methods. However, effects plasma treatment on current and are scarcely investigated. We therefore replaced traditional single storage layer HfOx/ZnO bilayer also treated its interface argon plasma. The could be suppressed μA due Schottky barrier at the interface. Additionally, enables tunability current, which attributed tunable height absorbed oxygen species introduced by treatment.
The three-dimensional (3D) topological insulator (TI) Bi2Se3 exhibits topologically protected, linearly dispersing Dirac surface states (SSs). To access the intriguing properties of these SSs, it is important to distinguish them from coexisting two-dimensional electron gas (2DEG) on surface. Here, we use circularly polarized light induce inverse spin Hall effect in a thin film at different temperatures (i.e., 77 300 K). It demonstrated that photoinduced (PISHE) top SSs and 2DEG can be...
Zn(O,S) is an attractive alternative to CdS as a buffer layer of Cu 2 ZnSnS 4 (CZTS)‐based solar cell due its higher bandgap and environmental friendliness. In this work, CZTS with structure CZTS/Zn(O,S)/Al:ZnO was simulated by Solar Cell Capacitance Simulator (SCAPS). The impacts thickness acceptor concentration CZTS, donor operating temperature on the performance cells were investigated. It has been obtained that optimum between 2000 3000 nm about 50 nm. suitable doping concentrations...
ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 gold thin films as catalysts, followed an argon plasma treatment for the as-grown NWs. A single NW–based memory cell Ti/ZnO/Ti structure was then fabricated to investigate effects of resistive switching. The improves homogeneity reproducibility switching NWs, it also reduces (set reset) voltages less fluctuations, which would be associated increased density oxygen vacancies...
Helicity-dependent photocurrent (HDPC) has been observed in epitaxial thin films of the three-dimensional topological insulator ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$ with a thickness 7, 20, and 30 quintuple layers (QLs). By analyzing incident angle dependence HDPC, we successfully extract induced by circular photon drag effect (CPDE) even parity from HDPC. It is found that photogalvanic (CPGE) larger than odd CPDE. The CPGEs top bottom surface states are distinguished at room temperature. As...
Cation substitution plays a crucial role in improving the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this work, we report significant enhancement flexible CZTSSe cells on Mo foils by partial Cu+ with Ag+. It is found that band gap (E g) (Cu1-x Ag x )2ZnSn(S,Se)4 (CAZTSSe) thin films can be adjusted doping from 0 to 6%, and minimum E g achieved = 5%. We also obviously increase average grain size CAZTSSe absorber 0.4 1.1 μm. Additionally, depletion width (W d) at heterojunction...
The circular photogalvanic effect (CPGE) provides a method utilizing circularly polarized light to control spin photocurrent and will also lead novel opto-spintronic devices. CPGE of three-dimensional topological insulator Bi2Te3 with different substrates thicknesses has been systematically investigated. It is found that the current can be dramatically tuned by adopting substrates. films on Si are more than two orders larger SrTiO3 when illuminated 1064 nm light, which attributed modulation...
Abstract Antimony sulfide (Sb 2 S 3 ) with high absorption coefficient reveals great potential for photodetectors (PDs) in various fields of military and national economy. A new type depleted Sb thin film photoconductive detector by using titanium dioxide (TiO interlayer the structure Au/(glass/TiO :)Sb /Au is designed. Compared normal Au/Sb devices, PDs obtain a higher switching ratio 90, greatly enhancing responsivity specific detectivity. Owing to electric field depletion region, response...
Strain is a useful method to manipulate properties of three-dimensional (3D) topological insulators (TIs). In this study, we demonstrate the possibility tune circular photogalvanic effect (CPGE) surface states 3D TI Sb2Te3 films by applying external strain. The CPGE grown on SrTiO3 (STO) with different thicknesses has been systematically investigated. It found that as thickness increases from 7-quintuple layer (QL) 27-QL, current first and then decreases. Additionally, currents remarkable...
The photocurrent has been measured in Al0.25Ga0.75N/GaN heterostructures at room temperature, and the photoinduced anomalous Hall effect (AHE) was observed. AHE current changes linearly with varied longitudinal electric fields. Due to strong Rashba spin–orbit coupling of two-dimensional electron gas heterostructures, intrinsic mechanism is supposed contribute AHE. measurement proposed this study could be used other spin related measurements temperature.
Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by diffusion. influences of Ag Sn impurities electrical, structural, morphological, optical properties investigated. In all samples, x-ray diffraction spectra revealed formation cubic phase. A significant increase in crystallite size observed after doping, while slightly decreased size. photoelectron spectroscopy verified diffusion into annealing. study...
Flexible Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have wide application prospects. N-type window layers and contact among the an important effect on properties of flexible CZTSSe cells. Here, we present a modified structure for with (CdS/ITO) instead traditional (CdS/ZnO/ITO) higher performance lower cost. The device realizes 9.2% efficiency improved fill factor (FF) from 57.7 to 63.6%. Systematic physical measurements show that increase in FF comes significant decrease series resistance (Rs). To...