A5101842218- Quantum and electron transport phenomena
- Topological Materials and Phenomena
- Semiconductor Quantum Structures and Devices
- Magnetic properties of thin films
- Graphene research and applications
- 2D Materials and Applications
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and devices
- Photorefractive and Nonlinear Optics
- Semiconductor materials and interfaces
- Quantum many-body systems
- Physics of Superconductivity and Magnetism
- Surface and Thin Film Phenomena
- Advanced Condensed Matter Physics
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Functional Equations Stability Results
- Electronic and Structural Properties of Oxides
- Inertial Sensor and Navigation
- Water-Energy-Food Nexus Studies
- Scientific Research and Discoveries
- Histone Deacetylase Inhibitors Research
- Optimization and Variational Analysis
- Nanowire Synthesis and Applications
- Magneto-Optical Properties and Applications
Institute of Semiconductors
2017-2024
Chongqing Medical University
2024
Chinese Academy of Sciences
2019-2024
Cotton Research Institute
2023
Chinese Academy of Agricultural Sciences
2023
University of Chinese Academy of Sciences
2013-2022
Chongqing University
2022
Fuzhou University
2016-2019
Changzhou University
2017
Suzhou Institute of Nano-tech and Nano-bionics
2013-2015
The three-dimensional (3D) topological insulator (TI) Bi2Se3 exhibits topologically protected, linearly dispersing Dirac surface states (SSs). To access the intriguing properties of these SSs, it is important to distinguish them from coexisting two-dimensional electron gas (2DEG) on surface. Here, we use circularly polarized light induce inverse spin Hall effect in a thin film at different temperatures (i.e., 77 300 K). It demonstrated that photoinduced (PISHE) top SSs and 2DEG can be...
Helicity-dependent photocurrent (HDPC) has been observed in epitaxial thin films of the three-dimensional topological insulator ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$ with a thickness 7, 20, and 30 quintuple layers (QLs). By analyzing incident angle dependence HDPC, we successfully extract induced by circular photon drag effect (CPDE) even parity from HDPC. It is found that photogalvanic (CPGE) larger than odd CPDE. The CPGEs top bottom surface states are distinguished at room temperature. As...
The circular photogalvanic effect (CPGE) provides a method utilizing circularly polarized light to control spin photocurrent and will also lead novel opto-spintronic devices. CPGE of three-dimensional topological insulator Bi2Te3 with different substrates thicknesses has been systematically investigated. It is found that the current can be dramatically tuned by adopting substrates. films on Si are more than two orders larger SrTiO3 when illuminated 1064 nm light, which attributed modulation...
Strain is a useful method to manipulate properties of three-dimensional (3D) topological insulators (TIs). In this study, we demonstrate the possibility tune circular photogalvanic effect (CPGE) surface states 3D TI Sb2Te3 films by applying external strain. The CPGE grown on SrTiO3 (STO) with different thicknesses has been systematically investigated. It found that as thickness increases from 7-quintuple layer (QL) 27-QL, current first and then decreases. Additionally, currents remarkable...
The circular (CPGE) and linear photogalvanic effect (LPGE) of a three-dimensional topological insulator Bi2Se3 thin film seven quintuple layers excited by near-infrared (1064 nm) mid-infrared (10.6 [Formula: see text]m) radiations have been investigated. comparison the CPGE current measured parallel perpendicular to incident plane, together with under front back illuminations, indicates that illumination 1064 nm light is dominated top surface states film. 10.6 text]m about one order larger...
The linear (LPGE) and circular photogalvanic effects (CPGE), induced by interband (532 nm) intersubband (1064 excitation, have been investigated in a temperature range from 77 to 300 K GaAs/AlGaAs two-dimensional electron gas. dependences of the CPGE current Rashba Dresselhaus spin orbit coupling (SOC) under excitation are obtained, respectively. It is revealed that LPGE almost increases with increasing temperature, while nearly decreases temperatures. These phenomena may be attributed...
Abstract The influence of spatial strain distribution on the anomalous circular photogalvanic effect (ACPGE) is investigated in p-type GaAs material. By tuning position exerted stress, it experimentally observed that uniform related ACPGE behaves like sine function, which resembles non-strain situation. Whereas gradient shows unimodal function line shape. To explain observations, a new theoretical model constructed based spin splitting energy bands. It demonstrated could purely derive from...
The ratio of Rashba and Dresselhaus spin splittings the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by photocurrent spectra induced circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned changing well width QWs inserting a one-monolayer-thick InAs layer interfaces QWs. Reflectance difference spectroscopy (RDS) is also employed to study interface asymmetry QWs, whose results are in good agreement with that obtained CPGE measurements. It...
Topological insulators (TIs) are considered as ideal spintronic materials due to the spin-momentum-locked Dirac surface states. The photoinduced anomalous Hall effect (PAHE) is a powerful tool investigate spin of topological even at room temperature. In this Letter, PAHE has been observed in three dimensional insulator Bi2Te3 thin films grown on Si substrates As thickness increases from 3 20 quintuple layer (QL), first and then decreases, it reaches maximum 7 QL. sign reversal QL sample...
The inverse spin Hall effect (ISHE) induced by the normal incidence of linearly-polarized infrared radiation has been observed in topological insulator Bi2Se3. A model proposed to explain phenomenon, and transverse force determined fitting. anomalous linear photogalvanic (ALPGE) is also observed, photoinduced momentum anisotropy extracted. Furthermore, ISHE ALPGE are investigated at different temperatures between 77 300 K, temperature dependence obtained. This study suggests a new way...
Circularly polarized photocurrent is observed in few-layer MoTe2 at room temperature. The spatial distribution of the circularly exhibits characteristics two wings, one positive and other negative, not only middle sample but also near electrodes. In addition, signal opposite to electrode same side. It revealed that this phenomenon arises from inverse spin Hall effect spin-polarized photo-generated carriers, which dominated by carrier diffusion or drift depending upon location light spot.
Electrically generated spin accumulation due to the Hall effect of Pt/GaAs is detected by circular polarized photoconductivity (CPPC), which shows electron spins with different polarizations accumulated around opposite sample boundaries. An optical absorption model incorporating used explain these features. The detailed analysis observed degree polarization photocurrent strongly suggests that Pt and GaAs have same length in heterostructure.
For unmanned aerial vehicles (UAVs), high-precision measurement and high-speed communication are necessary to realize flight operational missions. In this paper, we propose an integrated system in a Doppler frequency offset environment. The combines orthogonal division multiplexing (OFDM) modulation with binary carrier (BOC) formulate OFDM+BOC composite signal through power control. High-precision is achieved BOC modulation, high data transmission OFDM modulation. Furthermore, the tracked by...
We have measured a helicity-dependent photocurrent at zero external magnetic field in device based on semiconductor quantum well embedded p-i-n junction. The is excited under vertical incidence with circularly polarized light. spin filtering effect evidenced the temperature range 77--300 K owing to CoFeB/MgO filter out-of-plane magnetization remanence. explored as function of and bias. These characteristics are compared those in-plane magnetized filter, oblique In contrast device, light...
The inverse spin Hall effect induced by circularly polarized light has been observed in a GaAs/AlGaAs two-dimensional electron gas. transverse force determined fitting the photo-induced (PISHE) current to theoretical model. PISHE is also measured at different power and spot profiles, all measurement results are good agreement with calculations. We measure temperatures (i.e., from 77 300 K). temperature dependence of indicates that extrinsic mechanism plays dominant role, which further...