A5085487448- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Diamond and Carbon-based Materials Research
- Force Microscopy Techniques and Applications
- Advancements in Battery Materials
- Electronic and Structural Properties of Oxides
- Molecular Junctions and Nanostructures
- Quantum and electron transport phenomena
- Advanced Sensor and Energy Harvesting Materials
- Gas Sensing Nanomaterials and Sensors
- Advanced Battery Materials and Technologies
- Semiconductor Quantum Structures and Devices
- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Adhesion, Friction, and Surface Interactions
- Topological Materials and Phenomena
- Solid State Laser Technologies
- Icing and De-icing Technologies
- Advanced Chemical Sensor Technologies
- Ferroelectric and Negative Capacitance Devices
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Conducting polymers and applications
Chinese Academy of Sciences
2016-2025
Czech Academy of Sciences, Institute of Physics
2025
Czech Technical University in Prague
2020-2024
Sichuan University
2024
Institute of Physics
2016-2023
University of Chinese Academy of Sciences
2016-2022
National Laboratory for Superconductivity
2016-2021
Renmin University of China
2017
Collaborative Innovation Center of Quantum Matter
2017
National Center for Nanoscience and Technology
2017
Large scale epitaxial growth and transfer of monolayer MoS2 has attracted great attention in recent years. Here, we report the wafer-scale highly oriented continuous uniform films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The film is high quality stitched many 0°, 60° domains 60°-domain boundaries. Moreover, such can be transferred stacked a simple stamp-transfer process, substrate reusable for subsequent growth. Our progress would facilitate scalable...
In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS2. We found that weak Ar-plasma bombardment can locally induce 2H→1T transition in MoS2 to form mosaic structures. These transitions are stabilized by point defects (single S-vacancies) the sizes of induced 1T domains typically few nanometers, as revealed scanning tunneling microscopy measurements. On basis selected-area patterning process, fabricated FETs inducing within metal...
Abstract Recently, monolayer molybdenum disulphide (MoS 2 ) has emerged as a promising and non–precious electrocatalyst for hydrogen evolution reaction. However, its performance is largely limited by the low density poor reactivity of active sites within basal plane. Here, we report that domain boundaries in plane MoS can greatly enhance reaction serving sites. Two types effective boundaries, 2H-2H 2H-1T phase were investigated. Superior catalytic activity, long-term stability universality...
Recently, 2D materials exhibit great potential for humidity sensing applications due to the fact that almost all atoms are at surface. Therefore, quality of material surface becomes key point sensitive perception. This study reports an integrated, highly sensors array based on large-area, uniform single-layer molybdenum disulfide with ultraclean Device mobilities and on/off ratios decrease linearly relative varying from 0% 35%, leading a high sensitivity more than 104 . The reversible water...
The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for spintronic devices with exceptional properties. However, to use 2D vdW magnets building nanodevices such as magnetic memories, key challenges remain terms effectively switching the magnetization from one state other electrically. Here, we devise a bilayer structure Fe3GeTe2/Pt, which few-layered Fe3GeTe2 can be switched by spin-orbit torques (SOTs) originated current flowing Pt...
2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed fabricate graphene electrodes contacting monolayer MoS2 . FETs lengths scaling down ≈4 nm can be realized reliably. These graphene-contacted ultrashort exhibit superior performances including the nearly Ohmic contacts and excellent SCEs. This work provides facile route toward...
Abstract Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications twistronics, it is utmost importance control interlayer twist on large scales. In this work, we report precise in centimeter-scale stacked multilayer MoS 2 homostructures via combination wafer-scale highly-oriented monolayer growth techniques and...
Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays crucial role in tuning heterostructure properties. Here we report experimental investigation twist angle-dependent conductivities MoS2/graphene van heterojunctions. We found that vertical conductivity heterojunction can be tuned by ∼5 times under configurations,...
Control of the precise lattice alignment monolayer molybdenum disulfide (MoS 2 ) on hexagonal boron nitride (h‐BN) is important for both fundamental and applied studies this heterostructure but remains elusive. The growth precisely aligned MoS domains basal plane h‐BN by a low‐pressure chemical vapor deposition technique reported. Only relative rotation angles 0° or 60° between are present. Domains with same orientation stitch form single‐crystal, different orientations from mirror grain...
In 2D semiconductors, doping offers an effective approach to modulate their optical and electronic properties. Here, in situ of oxygen atoms monolayer molybdenum disulfide (MoS2 ) is reported during the chemical vapor deposition process. Oxygen concentrations up 20-25% can be reliable achieved these doped monolayers, MoS2-x Ox . These dopants are a form substitution sulfur MoS2 lattice reduce bandgap intrinsic without introducing in-gap states as confirmed by photoluminescence spectroscopy...
MoS2 nanoscrolls are formed by argon plasma treatment on monolayer sheet. The nanoscale scroll formation is attributed to the partial removal of top sulfur layer in during process. This convenient, solvent-free, and high-yielding nanoscroll technique also feasible for other 2D transition metal dichalcogenides.
Abstract Van der Waals heterostructures of transition metal dichalcogenides with interlayer coupling offer an exotic platform to realize fascinating phenomena. Due the type II band alignment these heterostructures, electrons and holes are separated into different layers. The localized induced doping in one layer, principle, would lift Fermi level cross spin-polarized upper conduction lead strong manipulation valley magnetic response. Here, we report significantly enhanced Zeeman splitting...
Stacking two-dimensional materials into van der Waals heterostructures with distinct interlayer twisting angles opens up new strategies for electronic structure and physical property engineering. Here, we investigate how the affect photoluminescence (PL) Raman spectra of MoS2/graphene heterostructures. Based on a series heterostructure samples different angles, found that PL monolayer MoS2 in these are strongly angle dependent. When evolves from 0° to 30°, both intensity emission energy...
Integrated thin film transistors based on CVD-grown high-quality monolayer MoS2 are reported. Every device has the stable and uniformity mobility ˜13.9 ± 2 cm2 v-1 s-1 an on/off ratio higher than 105. These field effect exhibit remarkably high mechanical flexibility with no obvious change of electrical characteristics upon strain ˜1%. As a service to our authors readers, this journal provides supporting information supplied by authors. Such materials peer reviewed may be re-organized for...
The recently emerging laminar transition metal dichalcogenides provide an unprecedented platform for exploring fascinating layer-dependent properties. Determining the dependence of exciton-phonon coupling (EPC) on dimensionality would set a foundation these exotic thickness-dependent phenomena. Here we report observation EPC between ${A}_{1g}(\mathrm{\ensuremath{\Gamma}})$ phonon and A\ensuremath{'} exciton in $\mathrm{WS}{\mathrm{e}}_{2}$ down to monolayer limit. Our results uncover that...
van der Waals (vdW) homo/heterostructures are ideal systems for studying interfacial tribological properties such as structural superlubricity. Previous studies concentrated on the mechanism of translational motion in vdW interfaces. However, detailed mechanisms and general rotational barely explored. Here, we combine experiments simulations to reveal twisting dynamics MoS2/graphite heterostructure. Unlike friction falling into superlubricity regime with no twist angle dependence, dynamic...
The performance of two-dimensional (2D) MoS2 devices depends largely on the quality itself. Existing fabrication process for 2D relies lithography and etching. However, it is extremely difficult to achieve clean patterns without any contaminations or passivations. Here we report a peel-off pattering films substrates based proper interface engineering. utilizes strong adhesion between gold removes film contact with directly, leading pattern generation residuals. Significantly improved...
Two-dimensional (2D) atomic crystals have made major inroads into condensed-matter physics and give rise to fascinating phenomena due quantum confinement. Here we report the first Raman scattering study on phonon-magnetic coupling, proximate spin liquid ground state collective fractionalized excitations in exfoliated α-RuCl3 layers. Our results uncover that 2D could harbour unusual magnetic continuum, serving as a hallmark of frustrated interactions. More importantly, our work demonstrates...
The investigation and control of quantum degrees freedom (DoFs) carriers lie at the heart condensed-matter physics next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining superior properties individual 2D materials manipulating spin, layer, valley DoFs. $\mathrm{Mo}{\mathrm{S}}_{2}$/graphene heterostructures, harboring prominent spin-transport graphene, giant spin-orbit...
Nonlinear photogalvanic effects in two-dimensional materials, particularly the nonlinear circular photocurrents (NCPs) that belong to helicity-dependent spin photocurrents, have sparked enormous research interest. Although notable progress has been witnessed, underling origin of NCPs remains elusive. Here, we present systematic photocurrent characteristics, symmetry analysis and theoretical calculations uncover physical MoS_{2}, a prototypical 2D semiconductor. Our results show NCP responses...
<title>Abstract</title> Solid film capacitors play a crucial role in the modern electrical and electronic industry, with organic polymer materials dominating market owing to their cost-effectiveness exceptional processability. However, low dielectric constants of current polymers gradually fail meet increasing demands for high energy density capacitors. Improving storage capacity films is imperative yet very challenging. This work synthesizes an aromatic polyimine (API) crystallinity unique...
The determination of the electronic structure by edge geometry is unique to graphene. In theory, an evanescent nonchiral state predicted at zigzag edges Up now, approach used study zigzag-edged graphene has mostly been limited scanning tunneling microscopy. transport properties have not revealed. Recent advances in hydrogen plasma-assisted "top-down" fabrication nanoribbons (Z-GNRs) allowed us investigate edge-related properties. this Letter, we report magnetotransport Z-GNRs down ∼70 nm...