In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as resistance layer. The switching between highand low-resistance states triggered the formation and dissociation of charge transfer complex. As compared with electrochemical-metallization-based ReRAM valence-change-based ReRAM, shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast speed,...

Herein, the novel strategy of copper oxide (CuO) deposited oxygen-doped nitrogen incorporated nanodiamond (NOND)/Si pyramids (Pyr-Si) heterostructure is studied for high-performance nonenzymatic glucose sensor. The combined properties surface-modified NOND/Pyr-Si induced by different growth durations (5 to 20 min) CuO envisioned improve sensitivity and stability. For comparison, same methods parameters were on plane silicon wafers. systematic analysis reveals best sensing 15 min grown...

Solar cells based on a high-efficiency silicon nanostructure (SNS) were developed using two-step metal-assisted electroless etching (MAEE) technique, phosphorus silicate glass (PSG) doping and screen printing. This process was used to produce solar with silver nitrate (AgNO3) solution in different concentrations. Compared produced the single MAEE SNS-based technique showed an increase surface coverage of ~181.1% decrease reflectivity ~144.3%. The performance found be optimized (~11.86%) SNS...

Monitoring the hydrogen gas (H2) level is highly important in a wide range of applications. Oxide-carbon hybrids have emerged as promising material for fabrication sensors this purpose. Here, first time, graphitic carbon nitride (g-C3N4)-doped zinc oxide nanorods (ZNRs) been grown on silicon (Si) pyramid-shaped surfaces by facile hydrothermal reaction method. The systematic analyses revealed that g-C3N4 nanostructures (NS) consistently incorporated into ZNRs pyramidal (Py-Si) surface...

A novel technique combination of ion bombardment (IB) and NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> plasma treatment (PT) has been presented to yield a highly effective charge storage layer for Si/SiO2/Si3N4/SiO2/Si (SONOS)-type nonvolatile memory applications. The IB creates additional trap sites within the strikingly enhance trapping/detrapping efficiency layer, PT passivates shallow significantly improve reliability...

A novel ion bombardment (IB) technique is presented to dope a limited Cu source in an SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> switching layer (SiO :Cu SL) for nonvolatile memory applications. Compared with other Cu-doping methods, this IB has many benefits, including local-doping effect, room-temperature process, and compatibility current IC manufacturing technology, besteading the 1T-1R integration. Through transmission...

In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel 2-bit/cell operation have been successfully demonstrated. The storage is easily obtained fast program/erase speed (10 mus/5 ms) low programming current (3.5 muA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of WSG-SONOS including unconsidered drain disturbance, long charge retention (>150degC) good...

In this paper, silicon-oxide-nitride-oxide-semiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in nitride using situ method multilevel and 2-b/cell operation have been successfully demonstrated. The proposed Si-NC deposition exhibits the advantages of low cost, simplicity, compatibility modern IC processes. SONOS memories Si-NCs exhibit a significantly improved performance large memory window (> 5.5 V), operating voltage (P/E voltage: V <sub...

A new sol-gel-derived Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Zr xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> Si xmlns:xlink="http://www.w3.org/1999/xlink">z</sub> O nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, high-density NC layer formed depositing well-mixed solution of titanium tetrachloride, silicon...

A novel ion bombardment (IB) technique is presented to fabricate and embed double-layer (DL) Ni nanocrystal (NC) in silicon nitride for TaN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /Si N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> /SiO nonvolatile memory applications. In contrast other methods of forming DL metal NC, the IB a relatively simple fabrication method...

Nanoscale‐crossbar electrochemical‐metallization (ECM) type resistive‐switching random access memory (ReRAM) is considered promising candidates for next‐generation non‐volatile memory. However, performing nanoscale patterning with traditional Cu‐based ECM ReRAM quite challenging, because Cu difficult to control and pattern using lithography etching. In this study, a Si 3 N 4 –SiO 2 bi‐layer was fabricated successfully through novel chemical displacement technique (Cu‐CDT). Compared other...

High density, vertical well-aligned p-type, n-type, and core-shell p-n homojunction Si nanowires were synthesized on p-Si substrate. The morphology, crystalline structure, composition, doping ratio of these investigated via field emission scanning electron microscope, Raman spectra, X-ray photoelectron spectroscopy. pH sensors fabricated with the typical extended-gate field-effect transistor method. junction samples had best performance for sensitivity at 68 mV/pH compared NWs n-Si sensors....

We developed organic resistive random access memory (ReRAM) devices using spin-coated polyimide (PI) as the layer. In this article, effect of chain length PI macromolecules on electrical performance ReRAM was studied. The macromolecule controlled by repeating addition step 4,4'-diaminodioxydianilinein a polyamic acid precursor. A long molecular film could be obtained increasing times. properties PI-based revealed that leakage current in high-resistance state and window can improved film....

In this study, we report nitrogen-doped nanodiamond (ND)-integrated crushed graphene (Gr) nanoflakes on nickel hydroxide (Ni(OH)2, named NH) nanostructures for highly stable nonenzymatic glucose sensors. A chemical vapor deposition route with a simple hydrothermal method was devised in the fabrication of ND-Gr-NH nanostructures. Thus, results depict that best sensitivity 13769 μA mM-1 cm-2 detected Gr-NH, while NH shows 10,358 cm-2. The salient improvement is 15,431.2 cm-2, limit detection...

Abstract Resistive random access memory (ReRAM) devices are considered to be one of the most promising candidates for next generation nonvolatile because their superior properties such as low power consumption, simple structure, high integration density, and fast operation speed. In this study, we used zinc oxide (ZnO) thin films fabricate ReRAM comprising Au/ZnO/Al Al/Au/ZnO/Al structures. We observed that operating stability device containing structure improved. The displayed effective...

The process of fabricating Cu layers by displacement reaction is demonstrated. In our experiments, Ti was used and displaced in the chemical to form copper films. TiN also adopted improve adhesion between dielectric layer. effects recipe on structure reliability lines were studied. obtained average electrical resistivity films after thermal annealing for samples grown from a less-oxygen-containing solution. Study showed that activation energy interconnect 0.92 eV, which very close result sputtering.

Al 05 Ga 0.5 N/n-Al 0.3 0.7 N/AlN metal-oxide-semiconductor heterostructure field- effect transistors (MOS-HFETs), grown on a SiC substrate, with composite 2 O 3 /in situ SiN passivation and gate dielectric are investigated. 20 nm thick high-k was deposited by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. Comparative studies between an in SiN-passivated Schottky-gate HFET (sample A) /SiN-passivated MOS-HFET were made. Besides, electrical deep-UV sensing...

Organic nonvolatile photomemory devices have drawn considerable attention in the field of optical computing. However, most organic use a charge-trap-type architecture that is complex and difficult to miniaturize. This paper proposes polyimide (PI) resistive device with simple metal–PI–metal configuration; its resistance can be altered using pulsed ultraviolet (UV) irradiation maintained at level even after has ceased. The also returned initial state by subsequent UV light. memory window...

A novel core‐shell structure of silicon nanorods/carbon nanotubes (SiNRs/CNTs) is developed for use in field emission cathodes. The CNTs were synthesized on SiNRs, using the Ag‐assisted electroless etching technique to form SiNRs/CNT structure. This resulting cathode demonstrated improved properties including a lower turn‐on electric E (1.3 V/ μ m, 1 A/cm 2 ), threshold th (1.8 mA/cm and higher enhancement factor β (2347). These superior indicate that this SiNRs/CNTs has good potential applications.