A5080577345- Silicon and Solar Cell Technologies
- Particle Detector Development and Performance
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Radiation Detection and Scintillator Technologies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Semiconductor Detectors and Materials
- Radiation Effects in Electronics
- Particle physics theoretical and experimental studies
- Dark Matter and Cosmic Phenomena
- Nuclear Physics and Applications
- Photonic and Optical Devices
- High-Energy Particle Collisions Research
- Semiconductor Quantum Structures and Devices
- Diamond and Carbon-based Materials Research
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
- CCD and CMOS Imaging Sensors
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Nuclear reactor physics and engineering
- Photonic Crystals and Applications
National Institute of Materials Physics
2011-2020
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
2005-2011
University of Rochester
2005
Institute of Physics and Technology
1996
Institute for Physics
1996
Brookhaven National Laboratory
1996
Joint Institute for Nuclear Research
1994-1995
Institutul de Fizică Atomică
1994-1995
University of Bucharest
1994
Research Institute of Radio
1994
Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning optical bandgap by quantum confinement nanocrystals. In this work, dense suitable enhanced photoconduction were fabricated from 60% TiO2 amorphous layers low temperature rapid thermal annealing at 550 °C. An exponential increase photocurrent with applied voltage was observed coplanar structure composite films deposited on oxidized wafers. The behaviour explained field effect control...
The trap parameters of defects in Si/CaF2 multilayered structures were determined from the analysis optical charging spectroscopy measurements. Two kinds maxima observed. Some them rather broad, corresponding to “normal” traps, while others, very sharp, attributed stress-induced traps. A procedure optimal linear smoothing noisy experimental data has been developed and applied. This is based on finding minimal value relative error with respect window. In order obtain a better accuracy for...
The development of short-wave infrared (SWIR) photonics based on GeSn alloys is high technological interest for many application fields, such as the Internet things or pollution monitoring. manufacture crystalline a major challenge, mainly because low miscibility Ge and Sn. use embedded nanocrystals (NCs) by magnetron sputtering cost-effective efficient method to relax growth conditions. We report GeSn/SiO2 multilayer deposition way control NC size their insulation. in situ prenucleation NCs...
GeSn alloys have the potential of extending Si photonics functionality in shortwave infrared (SWIR) light emission and detection. Epitaxial layers were deposited on a relaxed Ge buffer Si(100) wafer by using high power impulse magnetron sputtering (HiPI-MS). Detailed X-ray reciprocal space mapping HRTEM investigations indicate higher crystalline quality epitaxial HiPI-MS compared to commonly used radio frequency (RF-MS). To obtain rectifying heterostructure for SWIR detection, layer...
Detection in short-wave infrared (SWIR) has become a very stringent technology requirement for developing fields like hyperspectral imaging or climate changes. In market dominated by III–V materials, GeSn, Si compatible semiconductor, the advantage of cost efficiency and inerrability using mature technology. Despite recent progress material growth, easy fabrication crystalline GeSn still remains major challenge, different methods are under investigation. We present formation nanocrystals...
High performance trilayer memory capacitors with a floating gate of single layer Ge quantum dots (QDs) in HfO2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The sequence the is HfO 2/floating QDs 2/tunnel 2/p-Si wafers. Both and are nanostructured RTA at moderate temperatures 600-700 °C. By nanostructuring 600 °C, formation well separated diameters 2-3 nm density 4-5 × 1015 m-2 achieved (intermediate layer). inside intermediate arranged from each other...
Trilayer memory capacitors of control HfO2/floating gate Ge nanoparticles in HfO2/tunnel HfO2/Si substrate deposited by magnetron sputtering and subsequently annealed are investigated for the first time applications radiation dosimetry. In floating (FG), amorphous (NPs) arranged two rows inside HfO2 matrix. The matrix is formed orthorhombic/tetragonal nanocrystals (NCs). adjacent thin films to FG also NCs. This phase during annealing, samples with thick HfO2, presence Ge, being induced...
Measurements of deep level spectra for high resistivity silicon detectors irradiated by fluence fast neutrons (up to 10/sup 14/ n/cm/sup 2/) have been performed using a thermally stimulated current (TSC) spectrometer. Nine new defect levels with peaking temperatures respectively 26 K, 34 41 47 90 110 135 147 K and 155 begin appear fluences over 13/ 2/. All peaks are strongly dependent on the filling forward voltage V/sub fill/, or injection current, especially fluences. Energy inside band...
Trapping levels in fresh (one month) and naturally aged year) nanocrystalline porous silicon have been investigated using the optical charging spectroscopy method. Four significant maxima and/or shoulders were observed for samples five ones. They attributed to six trapping levels, respectively. The centers corresponding most shallow four are situated at or nearby internal surface of films.
The principal obstacle to long-time operation of silicon detectors at the highest energies in next generation experiments arises from bulk displacement damage which causes significant degradation their macroscopic properties. analysis behaviour after irradiation conduces a good or reasonable agreement between theoretical calculations and experimental data for time evolution leakage current effective carrier concentration lepton gamma large discrepancies hadron this conditions where is...
The nature of dark matter is still an open problem. simplest assumption that gravity the only force certainly coupled to and thus micro black holes could be a viable candidate. We investigated possibility direct detection charged with masses around upward Planck scale (10−5 g), ensuring classical gravitational treatment these objects in next generation huge LAr detectors. show signals (ionization scintillation) produced enable discrimination between other particles. It expected trajectories...
The influence of oxygen and carbon impurities on the concentrations defects in silicon for detector uses, complex fields radiation, characteristic to high energy physics experiments, is investigated frame quantitative phenomenological model developed previously by authors extended present paper. Continuous irradiation conditions are considered, simulating realistically environments these experiments. generation rate primary calculated starting from projectile–silicon interaction recoil...
The effects of 5 × 1011 cm−2 6+I127 ions 28 MeV kinetic energy on high resistivity (100) Si were studied. profile primary defects was simulated. produced by irradiation which act as traps investigated. Thermally stimulated current measurements without externally applied bias used, and for this the charged illuminating samples with 1000, 800, 400 nm wavelengths. discharge currents recorded modeled, therefore parameters determined. presence I ions, heavier than Si, stopped into target modeled...
High resistivity n-type silicon samples have been irradiated with /spl sim/1 MeV neutrons at fluences between 10/sup 12/ and 14/ n/cm/sup -2/. The radiation induced changes in Hall coefficient analysed by Effect measurement during a storage time of approximately seven months room temperature. measured for the most samples, exposed to higher than 4/spl times/10/sup 13/ cm/sup -2/, has switched from negative positive values 200 days after irradiation. This experimental evidence explains...